Enhancement mode InP MISFET's with sulfide passivation andphoto-CVD grown P3N5 gate insulators

High performance enhancement mode InP MISFET's have been successfully fabricated by using the sulfide passivation for lower interface states and with photo-CVD grown P₃N₅ film used as gate insulator. The MISFET's thus fabricated exhibited exhibited pinch-off behavior with essentially no hysteresis. Furthermore the device showed a superior stability of drain current. Specifically under the gate bias of 2 V for 10⁴ seconds the room temperature drain current was shown to reduce from the initial value merely by 2.9% at the drain voltage of 4 V. The effective electron mobility and extrinsic transconductance are found to be about 2300 cm ²/V·s and 2.7 mS/mm, respectively. The capacitance-voltage characteristics of the sulfide passivated InP MIS diodes show little hysteresis and the minimum density of interface trap states as low as 2.6×10¹⁴/cm² eV has been attained     

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.     

A new design method for prestressed concrete continuous flat slabs

This paper presents a simple but relatively accurate procedure for the analysis of unbonded prestressed continuous flat slabs. Bi‐circular curves instead of conventional parabolic ones are introduced to obtain the characteristic parameters of the curved tendon profiles. Based on the proposed tendon profile and theory of thin plates, a series of simple formulae are derived to compute the bending moments of flat slabs. The validity of the proposed method is demonstrated by comparing the results with those obtained from finite element analysis. The results of the analysis presented in this paper indicate that the proposed method turns out to be convenient and reasonably accurate in the analysis of prestressed flat slabs. Copyright © 2004 John Wiley & Sons, Ltd.     

Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors

In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p₂-Ga_0.8In_0.2As_0.19Sb_0.81/p₁-Ga_0.9In_0.1As_0.09Sb_0.91 and N₁-GaSb/n₂-Ga_0.9In_0.1As_0.09Sb_0.91/p-Ga_0.8In_0.2As_0.19Sb_0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga_0.8In_0.2As_0.19Sb_0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N₁-n₂-p structure is more sensitive than that with the p₁-side surface recombination velocity for the N-p₂-p₁ structure. In the N-p₂-p₁ structure with the incident light from the p₁-side surface, two-color detection is achieved.     

A Web‐based and Group Learning Environment for Introductory Environmental Engineering

The use of computer‐based technology is becoming more prevalent in the classroom. As a part of an educational research project sponsored by the GE Foundation, strategies for augmenting a course, Introduction to Environmental Engineering (CE 280), were investigated including cross‐disciplinary experiences in teamwork, design, and the use of advanced teaching technologies such as the web. Interactive tools to assist student learning were developed and refined. Efforts have focused on developing an extensive website, web‐based quizzes and homework assignments, and tutorials. Base groups were used to provide both intellectual and emotional support to students. This paper summarizes the development of this course and the impact of rapid feedback on the progression of student understanding.     

On the influence of N on residual microstrain in cryomilled Ni

The factors that influence the development of residual microstrain during milling in a liquid nitrogen atmosphere, defined hereafter as cryomilling, are investigated. The residual microstrains in cryomilled Ni, processed under various cryomilling conditions, were examined by X-ray diffraction (XRD) and analyzed through the single line approximation (SLA) method. The average residual microstrains are determined to be in the range of 2×10⁻³ to 6×10⁻³. The residual microstrain on the (200) plane is higher than those on the other planes by 33 pct. The residual microstrain and its anisotropy in Ni are reduced after heat treatment at 800 °C for 1 hour. The measured microstrain is proposed to evolve from the presence of N and O as impurity atoms in the Ni lattice. Both N and O are introduced from the environment and then their solubility in Ni is enriched via the generation of defects that occurs during cryomilling. The stable site for N and O atoms in Ni is the octahedral site, and the sizes of N and O atoms exceed those of the octahedral site of Ni by 48 and 16 pct respectively. Accordingly, a lattice strain field is expected around interstitial N atoms that are located at octahedral sites. By comparing the crystal structure around the octahedral site, the stable site for impurity N atoms, in the Ni lattice with that of Ni₃N structure, the lattice strains are estimated to be in the range of 5 to 15 pct. The result shows that the (200) plane has strains that are 2 times higher than those in other planes, and this is argued to be the reason for the measured anisotropy of residual strain in Ni after cryomilling.     

Pressure effects on flow and fracture of Be-Al alloys

The flow and fracture behavior of Be-Al alloys were determined in tension with different levels of superimposed pressure. The Be-Al alloys were prepared by Brush Wellman, Inc. (Cleveland, OH) from prealloyed powders processed to either a hot isostatically pressed (“hipped”) or cold isostatically pressed and extruded condition. Significant effects of pressure on both the flow and ductility have been observed at room temperature, with implications on the formability of these materials. The effects of changes in processing conditions and stress state on the flow and fracture behavior are summarized in addition to both optical and scanning electron microscopy (SEM) examination of the fracture surfaces. Separate other studies on the alloy constituents (e.g., Al and Be) are also reported. The results are also compared to previous works on monolithic materials and composites tested with high pressure.     

Spatial learning deficits in mice with a targeted glucocorticoid receptor gene disruption

Previous studies in rats using the Morris water maze suggested that the processing of spatial information is modulated by corticosteroid hormones through mineralocorticoid and glucocorticoid receptors in the hippocampus. Mineralocorticoid receptors appear to be involved in the modulation of explorative behaviour, while additional activation of glucocorticoid receptors facilitates the storage of information. In the present study we used the water maze task to examine spatial learning and memory in mice homozygous and heterozygous for a targeted disruption of the glucocorticoid receptor gene. Compared with wild-type controls, homozygous and heterozygous mice were impaired in the processing of spatial but not visual information. Homozygous mutants performed variably during training, without specific platform-directed search strategies. The spatial learning disability was partly compensated for by increased motor activity. The deficits were indicative of a dysfunction of glucocorticoid receptors as well as of mineralocorticoid receptors. Although the heterozygous mice performed similarly to wild-type mice with respect to latency to find the platform, their strategy was more similar to that of the homozygous mice. Glucocorticoid receptor-related long-term spatial memory was impaired. The increased behavioural reactivity of the heterozygous mice in the open field points to a more prominent mineralocorticoid receptor-mediated function. The findings indicate that (i) the glucocorticoid receptor is of critical importance for the control of spatial behavioural functions, and (ii) mineralocorticoid receptor-mediated effects on this behaviour require interaction with functional glucocorticoid receptors. Until the development of site-specific, inducible glucocorticoid receptor mutants, glucocorticoid receptor-knockout mice present the only animal model for the study of corticosteroid-mediated effects in the complete absence of a functional receptor.     

In situ polyurethane/silica composite formation via a sol‐gel process

Polyurethane acrylate anionomer (PUAA)/silica composite gels were prepared by the sol‐gel reaction of tetraethoxysilane (TEOS) and methacryloxypropyl trimethoxysilane (MPTS) incorporated to PUAA gels by using a swelling method. The formation and structure of composites were confirmed by FTIR, X‐ray diffraction, and SEM. As a result, we found that silica components in composites are located within the ionic domains of their gels and interacted with PUAA via hydrogen bonding. This drastically enhanced the mechanical properties of the composites. Mechanical properties are also improved by MPTS, because MPTS improves the dispersibility and adhesion of silica components in PUAA/silica composite gels. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 84: 2327–2334, 2002