Avalanche‐Discharge‐Induced Electrical Forming in Tantalum Oxide‐Based Metal–Insulator–Metal Structures

Oxide‐based metal–insulator–metal structures are of special interest for future resistive random‐access memories. In such cells, redox processes on the nanoscale occur during resistive switching, which are initiated by the reversible movement of native donors, such as oxygen vacancies. The formation of these filaments is mainly attributed to an enhanced oxygen diffusion due to Joule heating in an electric field or due to electrical breakdown. Here, the development of a dendrite‐like structure, which is induced by an avalanche discharge between the top electrode and the Ta₂O_5‐x layer, is presented, which occurs instead of a local breakdown between top and bottom electrode. The dendrite‐like structure evolves primarily at structures with a pronounced interface adsorbate layer. Furthermore, local conductive atomic force microscopy reveals that the entire dendrite region becomes conductive. Via spectromicroscopy it is demonstrated that the subsequent switching is caused by a valence change between Ta⁴⁺ and Ta⁵⁺, which takes place over the entire former Pt/Ta₂O_5‐x interface of the dendrite‐like structure.     

Beyond Cognitive Framing Processes: Anger Mediates the Effects of Responsibility Framing on the Preference for Punitive Measures

A new stream of research indicates that framing effects are based on emotional as well as cognitive processes. However, it is not entirely clear whether emotions mediate framing effects and what the moderators of emotional mediation processes are. To address these questions, we conducted an experiment in which the framing of responsibility for a social problem was manipulated (ambivalent vs. high‐responsibility frame). We find that the high‐responsibility frame increased the preference for punitive measures by increasing responsibility beliefs and eliciting anger. Furthermore, we find that trait anger moderates the framing effect on anger and that responsibility beliefs are positively associated with anger intensity. The significance of these findings for framing research and suggestions for future studies are discussed.     

A monolithically integrated high‐efficiency Cu(In,Ga)Se2 mini‐module structured solely by laser

Monolithically integrated Cu(In,Ga)Se₂ mini‐modules were fabricated in order to reduce the width of patterning related dead area. The Cu(In,Ga)Se₂ layers were prepared on soda‐lime glasses using the multistage process at low substrate temperature below 500 °C. A picosecond laser with a wavelength of 532 nm was used for all of the structuring processes (P1, P2, and P3) for the monolithic integration. A “lift‐off” type structuring was applied for P1 and P3, and an “ablation” type was for P2. The laser structuring was optimized to be minimizing the dead area width, and the width of about 70 µm was successfully achieved. A mini‐module, in which the optimized structuring processes were applied for the integration, demonstrated a certified efficiency of 16.6%. Copyright © 2015 John Wiley & Sons, Ltd.     

Polarization control in a vertical cavity surface emitting laser submitted to optical feedback

We study experimentally and theoretically two polarization effects in a vertical cavity surface emitting laser submitted to optical feedback. In a first experiment, we obtain flips between two linearly polarized laser modes up to a frequency of 50 MHz using an external cavity with a polarizer. In a second experiment, polarization self modulation is demonstrated up to a frequency of 2.6 GHz, using a quarter wave plate instead. Numerical calculations, based on a four levels model for the active medium, show a good agreement with the experiments.     

ATM cell encryption and key update synchronization

This paper presents a data compaction/randomization based approach as a mode of block encryption for ATM (Asynchronous Transfer Mode) cells. The presented approach converts a plaintext into pseudo‐random plaintext before ciphering to conceal patterns in the plaintext. The underlying idea behind this scheme is the Shannon's principles of “confusion” and “diffusion” which involve breaking dependencies and introducing as much randomness as possible into the ciphertext. In this scheme, confusion and diffusion are introduced into the system by first compressing the ATM cell payload and then spreading a continuously changing random data over the entire content of the cell. As a mode of operation for block ciphering, this scheme offers the following attractive features:(i) plaintext patterns are pseudo‐randomized and chained with ciphertext (thereby, preventing against “dictionary”, “known plaintext”, and “statistical analysis” attacks), (ii) it is self‐synchronizing, (iii) cell loss has no additional negative effect, (iv) no IV (Initialization Vector) storage is required, (v) it is encryption‐algorithm independent, (vi) there is no cell‐to‐cell dependency (no feedback from previous cells), and (vii) it is highly scalable (i.e., cells from the same stream can be ciphered and deciphered in parallel). This paper also presents a secure mechanism for in‐band synchronization of encryption/decryption key updates using a “marker‐cell” that is carried within the data channel. An important aspect of both the above mechanisms is that they do not require any changes to the ATM cell header or ATM infrastructure. This revised version was published online in June 2006 with corrections to the Cover Date.     

Enhanced Electron Mobility Due to Dopant‐Defect Pairing in Conductive ZnMgO

The increase of the band gap in Zn_1‐xMg_xO alloys with added Mg facilitates tunable control of the conduction band alignment and the Fermi‐level position in oxide‐heterostructures. However, the maximal conductivity achievable by doping decreases considerably at higher Mg compositions, which limits practical application as a wide‐gap transparent conductive oxide. In this work, first‐principles calculations and material synthesis and characterization are combined to show that the leading cause of the conductivity decrease is the increased formation of acceptor‐like compensating intrinsic defects, such as zinc vacancies (V_Zn), which reduce the free electron concentration and decrease the mobility through ionized impurity scattering. Following the expectation that non‐equilibrium deposition techniques should create a more random distribution of oppositely charged dopants and defects compared to the thermodynamic limit, the paring between dopant Ga_Zn and intrinsic defects V_Zn is studied as a means to reduce the ionized impurity scattering. Indeed, the post‐deposition annealing of Ga‐doped Zn_0.7Mg_0.3O films grown by pulsed laser deposition increases the mobility by 50% resulting in a conductivity as high as σ = 475 S cm^‐1.     

Accelerated development of CuSbS2 thin film photovoltaic device prototypes

Development of alternative thin film photovoltaic technologies is an important research topic because of the potential of low‐cost, high‐efficiency solar cells to produce terawatt levels of clean power. However, this development of unexplored yet promising absorbers can be hindered by complications that arise during solar cell fabrication. Here, a high‐throughput combinatorial method is applied to accelerate development of photovoltaic devices, in this case, using the novel CuSbS₂ absorber via a newly developed three‐stage self‐regulated growth process to control absorber purity and orientation. Photovoltaic performance of the absorber, using the typical substrate CuIn_xGa_{1 − x}Se₂ (CIGS) device architecture, is explored as a function of absorber quality and thickness using a variety of back contacts. This study yields CuSbS₂ device prototypes with ~1% conversion efficiency, suggesting that the optimal CuSbS₂ device fabrication parameters and contact selection criteria are quite different than for CIGS, despite the similarity of these two absorbers. The CuSbS₂ device efficiency is at present limited by low short‐circuit current because of bulk recombination related to defects, and a small open‐circuit voltage because of a theoretically predicted cliff‐type conduction band offset between CuSbS₂ and CdS. Overall, these results illustrate both the potential and limits of combinatorial methods to accelerate the development of thin film photovoltaic devices using novel absorbers. Copyright © 2016 John Wiley & Sons, Ltd.     

The role of hydrogen for the long term development of sustainable energy systems—a case study for Germany

Based on different current long-term energy scenarios the paper discusses the future perspectives of hydrogen in the German energy system as a representative example for the development of sustainable energy systems. The scenario analysis offers varying outlines of the future energy system that determine the possible role of hydrogen. The paper discusses the possibilities of expanding the share of renewable energy and the resulting prospects for establishing clean hydrogen production from renewable energy sources. Emphasis is given to the questions of an ecologically efficient allocation of limited renewable energy resources that can only be assessed from a systems analysis perspective. Findings from recent studies for Germany reveal a strong competition between the direct input into the electricity system and an indirect use as fuel in the transport sector. Moreover, the analysis underlines the paramount importance of reducing energy demand as the inevitable prerequisite for any renewable energy system.