The impacts of SILC and hot carrier induced drain leakage current on the refresh time in DRAM

This paper reports the temperature dependence of SILC and hot carrier induced drain leakage current, and their impact on the refresh time in Giga-bit level DRAM with practical considerations. SILC has been found to increase as the monitoring and stress temperature increases. Due to the generation of interface states, hot carrier induced pn junction leakage current and band-to-band tunneling current have been found to increase as the monitoring temperature increases.From the simulation results of a refresh circuit for Giga-bit level DRAM, it has been found that the increase of SILC with stress time is a dominant factor in refresh failure below 373K, and the pn junction leakage current will be a dominant factor at the high elevated temperature. It has been also observed that the increase of hot carrier induced drain leakage current can be a cause for the refresh failure.     

Self-Assembled Perovskite Nanoislands on CH3NH3PbI3 Cuboid Single Crystals by Energetic Surface Engineering

Organometal perovskite single crystals have been recognized as a promising platform for high-performance optoelectronic devices, featuring high crystallinity and stability. However, a high trap density and structural nonuniformity at the surface have been major barriers to the progress of single crystal-based optoelectronic devices. Here, the formation of a unique nanoisland structure is reported at the surface of the facet-controlled cuboid MAPbI₃ (MA = CH₃NH₃⁺) single crystals through a cation interdiffusion process enabled by energetically vaporized CsI. The interdiffusion of mobile ions between the bulk and the surface is triggered by thermally activated CsI vapor, which reconstructs the surface that is rich in MA and CsI with reduced dangling bonds. Simultaneously, an array of Cs-Pb-rich nanoislands is constructed on the surface of the MAPbI₃ single crystals. This newly reconstructed nanoisland surface enhances the light absorbance over 50% and increases the charge carrier mobility from 56 to 93 cm² V⁻¹ s⁻¹. As confirmed by Kelvin probe force microscopy, the nanoislands form a gradient band bending that prevents recombination of excess carriers, and thus, enhances lateral carrier transport properties. This unique engineering of the single crystal surface provides a pathway towards developing high-quality perovskite single-crystal surface for optoelectronic applications.     

Joint Optimization of User Set Selection and Transmit Power Allocation for Orthogonal Random Beamforming in Multiuser MIMO Systems

When the number of users is finite, the performance improvement of the orthogonal random beamforming (ORBF) scheme is limited in high signal‐to‐noise ratio regions. In this paper, to improve the performance of the ORBF scheme, the user set and transmit power allocation are jointly determined to maximize sum rate under the total transmit power constraint. First, the transmit power allocation problem is expressed as a function of a given user set. Based on this expression, the optimal user set with the maximum sum rate is determined. The suboptimal procedure is also presented to reduce the computational complexity, which separates the user set selection procedure and transmit power allocation procedure.     

Design of a 3-D fully depleted SOI computational RAM

We introduce a three-dimensional (3-D) processor-in-memory integrated circuit design that provides progressively increasing processing power as the number of stacked dies increases, while incurring no extra design effort or mask sets. Innovative techniques for processor/memory redundancy and fast global bus evaluation are described. The architecture can be augmented with a nearest-neighbor physical 3-D communications network that can substantially reduce interconnect lengths and relieve routing congestion. The test chip, with 128 Kb of memory and 512 processing elements (PEs) on two fully depleted silicon-on-insulator (SOI) dies, can achieve a peak of 170 billion-bit-operations per second at 400 MHz.     

A movable safety zone scheme in urban fiber-optic microcellularsystems

We consider an urban fiber-optic microcellular system in which a cigar-shaped cell consists of several microzones with their own antenna sites connected to a central station through optical fibers. To increase the efficiency of radio resources and reduce unnecessary handoffs between microzones, we propose a movable safety zone scheme. A safety zone is a virtually guarded area that does not permit cochannel interference. Outside the safety zone, cochannels can be reused. The safety zone can move under the condition that its user does not meet cochannel interference as he moves to an adjacent microzone. Considering user mobility characteristics in the cigar-shaped cell, we analyze and evaluate the proposed system in terms of intracell and intercell handoff rates, blocking probability, intracell call-dropping probability, and channel reuse parameter. The proposed system can handle a traffic capacity of about 12 Erlangs for seven traffic channels under a call blocking probability of 1% and generates a negligible number of intracell handoffs compared with those of intercell handoffs     

Improvement of P-channel SOI LDMOS transistor by adapting a newtapered oxide technique

On-resistance of P-channel REduced SURface Field (RESURF) lateral double-diffused MOS (LDMOS) transistors has been improved by using a new tapered TEOS field oxide on the drift region of the devices. The new tapered oxidation technique provides better uniformity, less than 3%, and reproducibility. With the similar breakdown voltage (V_B), at V_gs=-5.0 V, the specific on-resistance (R_sp) of the LDMOS with the tapered field oxide is about 31.5 mΩ·cm ², while that of the LDMOS with the conventional field oxide is about R_sp=57 mΩ·cm². The uniformities of R_sp and V_B are less than 5 and 3%, respectively     

Power allocation policies with full and partial inter-system channel state information for cognitive radio networks

This paper investigates several power allocation policies in orthogonal frequency division multiplexing -based cognitive radio networks under the different availability of inter-system channel state information (CSI) and the different capability of licensed primary users (PUs). Specifically, we deal with two types of PUs having different capabilities: a dumb (peak interference-power tolerable) PU and a more sophisticated (average interference-power tolerable) PU. For such PU models, we first formulate two optimization problems that maximize the capacity of unlicensed secondary user (SU) while maintaining the quality of service of PU under the assumption that both intra- and inter-system CSI are fully available. However, due to loose cooperation between SU and PU, it may be difficult or even infeasible for SU to obtain the full inter-system CSI. Thus, under the partial inter-system CSI setting, we also formulate another two optimization problems by introducing interference-power outage constraints. We propose optimal and efficient suboptimal power allocation policies for these four problems. Extensive numerical results demonstrate that the spectral efficiency achieved by SU with partial inter-system CSI is less than half of what is achieved with full inter-system CSI within a reasonable range of outage probability (e.g., less than 10 %). Further, it is shown that the average interference-power tolerable PU can help to increase the saturated spectral efficiency of SU by about 20 and 50 % in both cases of full and partial inter-system CSI, respectively.     

Least Squares Based Coupling Cancelation for MLC NAND Flash Memory with a Small Number of Voltage Sensing Operations

The cell-to-cell interference (CCI) becomes the major source of distortion in NAND Flash memory as the feature size continuously decreases. As a result, removing the interference is crucial to ensure storage reliability while increasing the memory density. Along with the CCI, data retention also becomes a problem because only a small number of charges are stored at each cell. In this research, we propose a CCI cancelation algorithm that can remove or mitigate the CCI even when the data retention noise is fairly large. The coefficients for the proposed CCI canceler are adaptively found by minimizing the estimation error of the CCI, and the least squares method is used for the optimization. To reduce the number of voltage sensing operations, optimal multi-level memory sensing schemes for the proposed CCI canceler are studied. The developed algorithm is applied to both simulated and real NAND Flash memory, and it is demonstrated that the CCI canceler significantly lowers the bit error rate (BER) of multi-level cell (MLC) NAND Flash memory.     

Improved photovoltaic performance by enhanced crystallinity of poly(3-hexyl)thiophene

The packing effects induced by the hydrophilic ethylene glycol oligomer side chains occurred in a P3HT:PC₆₁BM mixture upon the addition of small amounts of BP93 (containing 7 mol% PEGT blocks), leading to an enhanced crystallinity among the P3HT molecules, even in a P3HT:PC₆₁BM blend. The enhanced crystallinity improved the charge transport and current density (8.3–11.1 mA/cm²) and increased the power conversion efficiency (3.1–3.9%) in an organic solar cell.