Barrier layer effect of tantalum on the electromigration in sputtered copper films on hydrogen silsesguioxane and SiO2

As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO₂ substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect.     

Isothermal interphase diffusion with consecutive reactions

For multi-step heterogeneous consecutive reactions affected entirely by interphase diffusion under isothermal condition, the equations for the effectiveness factors, the surface concentrations and the point yields were derived in terms of the Damkoehler numbers or the measurables from the mass balances set up on the assumption that the mass-transfer rate balances the surface-reaction rate at steady state. From the analyses of the equations derived, the effectiveness factors for the intermediate steps and the surface concentrations of intermediates were understood to be enhanced by the measurables inclusive of the concentrations and the mass-transfer coefficients. Then the effect of the concentrations was concluded to be most significant. The effects of these measurables to the effectiveness factors and the surface concentrations were qualitatively discussed for simple consecutive reactions and also for additive consecutive reactions. Especially, as for two-step additive consecutive reactions, the effects of measurables η Da and the concentrations to the effectiveness factors were examined with graphical presentations. Finally, the brief discussion of the dependency of the Damkoehler number upon reaction time and the effect of the Renolds number and diffusivity to the extent of the mass-transfer resistance were presented.     

中原油田水平井钻井液技术

根据中原油田地层高温、高盐、易塌、易漏失及水平井的特点,优选了适用于水平井的强抑制强封堵聚合物钻井液体系,并进行了现场应用.室内实验结果表明,优选的强抑制强封堵聚合物钻井液具有良好的井眼净化、摩阻控制、井壁稳定及油层保护等性能.现场应用时能满足钻井、录井、测井的需要,钻井施工顺利,取得了良好的经济和社会效益.     

沿江圩区排涝水文计算实例

设计排涝模数的计算是圩区排涝规划的主要内容之一,它的大小决定了排涝站的装机容量和涵闸尺寸.本文推求了安徽省马鞍山市大公圩地区的排涝模数,是沿江圩区排涝水文计算的一个应用实例.     

Determining stress intensity factors of composites using crack opening displacement

The main purpose of this paper is to find the mixed-mode stress intensity factors of composite materials using the crack opening displacement (COD). First, a series solution of the composite material with a crack was used to evaluate COD values. Then, the least-squares method was used to calculate mixed-mode stress intensity factors. This algorithm can be applied to any method that generates or measures COD values. The major advantage of this method is that COD values very near the crack tip are not necessary. Both finite element simulations and laboratory experiments were applied to validate this least-squares method with acceptable accuracy if the even terms of the series solution are removed.     

High-yield synthesis of single-crystalline 3C-SiC nanowires by a facile autoclave route

Single-crystalline 3C-SiC nanowires have been synthesized in large scale through a one-step autoclave route by the reaction of SiCl₄, (C₅H₅)₂Fe and metallic Na at 500 °C. Electron microscopy investigations show that the nanowires have typical diameters of 15-50 nm, lengths up to several tens of micrometers and grow along the [111] direction. The possible growth mechanism of the nanowires is discussed.     

再谈过度包装

过度包装作为一种虚假的、不合理的包装在当下仍有市场。按市场的规律去追溯,其原因在于生产者、设计者、消费者、决策者4个方面。文章从生产者的失信行为、设计者的伦理道德、消费者的虚荣心理、决策者的法规建制方面进行了阐述,指出通过社会各界的合力,结合国外的成例,中国的包装业将会进入合理、适度包装的良性循环发展阶段。     

Extensions of LDA by PCA mixture model and class-wise features

Linear discriminant analysis (LDA) is a data discrimination technique that seeks transformation to maximize the ratio of the between-class scatter and the within-class scatter. While it has been successfully applied to several applications, it has two limitations, both concerning the underfitting problem. First, it fails to discriminate data with complex distributions since all data in each class are assumed to be distributed in the Gaussian manner. Second, it can lose class-wise information, since it produces only one transformation over the entire range of classes. We propose three extensions of LDA to overcome the above problems. The first extension overcomes the first problem by modelling the within-class scatter using a PCA mixture model that can represent more complex distribution. The second extension overcomes the second problem by taking different transformation for each class in order to provide class-wise features. The third extension combines these two modifications by representing each class in terms of the PCA mixture model and taking different transformation for each mixture component. It is shown that all our proposed extensions of LDA outperform LDA concerning classification errors for synthetic data classification, hand-written digit recognition, and alphabet recognition.     

N-Type Field-Effect Transistors Using Multiple Mg-Doped ZnO Nanorods

Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO₂ gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10^-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold     

High Gd Concentration GaGdN Grown at Low Temperatures

GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism occurs in the low-temperature-growth GaGdN.