High Areal Capacitance of N‐Doped Graphene Synthesized by Arc Discharge

The lack of cost effective, industrial‐scale production methods hinders the widespread applications of graphene materials. In spite of its applicability in the mass production of graphene flakes, arc discharge has not received considerable attention because of its inability to control the synthesis and heteroatom doping. In this study, a facile approach is proposed for improving doping efficiency in N‐doped graphene synthesis through arc discharge by utilizing anodic carbon fillers. Compared to the N‐doped graphene (1–1.5% N) synthesized via the arc process according to previous literature, the resulting graphene flakes show a remarkably increased doping level (≈3.5% N) with noticeable graphitic N enrichment, which is rarely achieved by the conventional process, while simultaneously retaining high turbostratic crystallinity. The electrolyte ion storage of synthesized materials is examined in which synthesized N‐doped graphene material exhibits a remarkable area normalized capacitance of 63 µF cm^?2. The surprisingly high areal capacitance, which is superior to that of most carbon materials, is attributed to the synergistic effect of extrinsic pseudocapacitance, high crystallinity, and abundance of exposed graphene edges. These results highlight the great potentials of N‐doped graphene flakes produced by arc discharge in graphene‐based supercapacitors, along with well‐studied active exfoliated graphene and reduced graphene oxide.     

W-band divide-by-3 frequency divider using 0.1 /spl mu/m InAlAs/InGaAs metamorphic HEMT technology

A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 /spl mu/m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW.     

Dielectric reliability of stacked Al2O3–HfO2 MIS capacitors with cylinder type for improving DRAM data retention characteristics

Dielectric reliability in Al₂O₃(2–3.1nm)–HfO₂(3nm) stack capacitor with Metal–Insulator–Si(MIS) structure is investigated in this paper. We propose an optimized capacitor process through the Time–Dependent Dielectric Breakdown (TDDB) data under various process conditions. Furthermore, due to asymmetric current at both negative and positive voltage stress polarities, we show different lifetime extrapolation by a fluence–driven model. As a result, the maximum allowed operating voltage is projected to be 1.7V (failure rate 10ppm during 10year @ 85°C) for Data “0” retention lifetime.     

Visual Cryptography Based on an Interferometric Encryption Technique

This paper presents a new method for a visual cryptography scheme that uses phase masks and an interferometer. To encrypt a binary image, we divided it into an arbitrary number of slides and encrypted them using an XOR process with a random key or keys. The phase mask for each encrypted image was fabricated under the proposed phase‐assignment rule. For decryption, phase masks were placed on any path of the Mach‐Zehnder interferometer. Through optical experiments, we confirmed that a secret binary image that was sliced could be recovered by the proposed method.     

Simultaneous amplification by Er ions and SRS in an Er-doped germano-silica fiber

A flat signal gain over in the entire C- and L-bands by erbium (Er) ions' radiative transition and stimulated Raman scattering in an Er-doped germano-silica fiber can be obtained if proper values of the concentration of Er and background loss in a fiber core are obtained during the fiber fabrication process. The optimized conditions for the flat C- and L-band gain are analyzed as functions of Er concentrations. Even for a low-gain value provided by a germano-silica core fiber with a low Er concentration and an optimum fiber length, a relatively low pump is required to obtain the flat gain band.     

Relationship between ADC performance and requirements of digital-IF receiver for WCDMA base-station

The recent rapid development of digital wireless systems has led to the need for multistandard, multichannel radiofrequency (RF) transceivers. The paper presents the relationship between the performance of a bandpass-sampling analog-to-digital converter (ADC) and the requirements of a digital intermediate-frequency receiver for a wideband code-division multiple-access (WCDMA) base-station. As such, the ADC signal-to-noise ratio (SNR), the derivation of the receiver sensitivity using the SNR/spurious free dynamic range (SFDR) of the ADC, the effect of the ADC clock jitter and receiver linearity, plus the relationship between the receiver IF and the ADC sampling frequency are all analyzed. As a result, when a WCDMA base-station receiver has a data rate of 12.2 kbps, bit error rate (BER) of 0.001, and channel index, k, of 5 (sampling frequency of 122.88 MHz and IF of 92.16 MHz), the performance of a bandpass-sampling ADC was analytically determined to require a resolution of 14 bits or more, SNR of 66.6 dB or more, SFDR of 86.5 dBc or more, and total jitter of 0.2 ps or less, including internal ADC jitters and clock jitters.     

Analyzing the Boundary Thermal Resistance of Epitaxially Grown Fe<Subscript>2</Subscript>VAl/W Layers by Picosecond Time-Domain Thermoreflectance

To gain deep insight into the mechanism of phonon scattering at grain boundaries, we investigated the boundary thermal resistance by using picosecond pulsed-laser time-domain thermoreflectance for epitaxially grown W/Fe₂VAl/W films. By using radio-frequency magnetron sputtering, we prepared a series of the three-layer films whose Fe₂VAl thickness ranged from 1 nm to 37 nm. The fine oscillation of reflectivity associated with the top W layer clearly appeared in synchrotron x-ray reflectivity measurements, indicating a less obvious mixture of elements at the boundary. The areal heat diffusion time, obtained from the time-domain thermoreflectance signal in the rear-heating front-detection configuration, reduced rapidly in samples whose Fe₂VAl layer was thinner than 15 nm. The ～ 10% mismatch in lattice constant between Fe₂VAl and W naturally produced the randomly distributed lattice stress near the boundary, causing an effective increase of boundary thermal resistance in the thick samples, but the stress became homogeneous in the thinner layers, which reduced the scattering probability of phonons.     

Harmonic decomposition in PDE-based denoising technique for magnetic resonance electrical impedance tomography

Recent progress in magnetic resonance electrical impedance tomography (MREIT) research via simulation and biological tissue phantom studies have shown that conductivity images with higher spatial resolution and accuracy are achievable. In order to apply MREIT to human subjects, one of the important remaining problems to be solved is to reduce the amount of the injection current such that it meets the electrical safety regulations. However, by limiting the amount of the injection current according to the safety regulations, the measured MR data such as the z-component of magnetic flux density Bz in MREIT tend to have low SNR and get usually degraded in their accuracy due to the nonideal data acquisition system of an MR scanner. Furthermore, numerical differentiations of the measured Bz required by the conductivity image reconstruction algorithms tend to further deteriorate the quality and accuracy of the reconstructed conductivity images. In this paper, we propose a denoising technique that incorporates a harmonic decomposition. The harmonic decomposition is especially suitable for MREIT due to the physical characteristics of Bz. It effectively removes systematic and random noises, while preserving important key features in the MR measurements, so that improved conductivity images can be obtained. The simulation and experimental results demonstrate that the proposed denoising technique is effective for MREIT, producing significantly improved quality of conductivity images. The denoising technique will be a valuable tool in MREIT to reduce the amount of the injection current when it is combined with an improved MREIT pulse sequence.     

A 2.4-GHz Low-Power Low-IF Receiver and Direct-Conversion Transmitter in 0.18-μm CMOS for IEEE 802.15.4 WPAN Applications

In this paper, a low-power low-IF receiver and a direct-conversion transmitter (DCT) suitable for the IEEE standard 802.15.4 radio system at the 2.4-GHz band are presented in 0.18-mum deep n-well CMOS technology. By using vertical NPN (V-NPN) bipolar junction transistors in the baseband analog circuits of the low-IF receiver, the image rejection performance is improved and the power consumption is reduced. In addition, by applying the V-NPN current mirrored technique in a DCT, the carrier leakage is reduced and the linearity performance is improved. The receiver has 10 dB of noise figure, -15 dBm of third-order input intercept point, and 35 dBc of image rejection. The transmitter has more than -2 dBm of transmit output power, -35 dBc of local oscillator leakage, and -46 dBc of the transmit third harmonic component. The receiver and transmitter dissipate 6 and 9 mA from a 1.8-V supply, respectively