A cruciform-dumbbell model for inverted dimer formation mediated by inverted repeats

Small inverted repeats (small palindromes) on plasmids have been shown to mediate a recombinational rearrangement event in Escherichia coli leading to the formation of inverted dimers (giant palindromes). This recombinational rearrangement event is efficient and independent of RecA and RecBCD. In this report, we propose a cruciform-dumbbell model to explain the inverted dimer formation mediated by inverted repeats. In this model, the inverted repeats promote the formation of a DNA cruciform which is processed by an endonuclease into a linear DNA with two hairpin loops at its ends. Upon DNA replication, this linear dumbbell-like DNA is then converted to the inverted dimer. In support of this model, linear dumbbell DNA molecules with unidirectional origin of DNA replication (ColE1 ori ) have been constructed and shown to transform E.coli efficiently resulting in the formation of the inverted dimer. The ability of linear dumbbell DNA to transform E.coli suggests that the terminal loops may be important in bypassing the requirement of DNA supercoiling for initiation of replication of the ColE1 ori.     

A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power mm-wave digital and RF circuit capability

A 90-nm silicon-on-insulator (SOI) CMOS system on-chip integrates high-performance FETs with 243-GHz F/sub t/, 208-GHz F/sub max/, 1.45-mS//spl mu/m gm, and sub 1.1-dB NFmin up to 26 GHz. Inductor Q of 20, VNCAP of 1.8-fF//spl mu/m/sup 2/, varactor with a tuning range as high as 25:1, and a low-loss microstrip. Transmission lines were successfully integrated without extra masks and processing steps. SOI and its low parasitic junction capacitance enables this high level of performance and will expand the use of CMOS for millimeter-wave applications.     

Insights into carrier recombination processes in 1.3 μmGaInNAs-based semiconductor lasers attained using high pressure

The threshold current of 1.3 μm GaInNAs lasers increases by ~30%, up to a pressure of 1 GPa compared with a decrease of ~15% for Auger-dominated InGaAsP devices, indicating that direct band-to-band Anger recombination is not important in these materials. The lasing energy varies sub-linearly with pressure, indicative of the increasing interaction of the N-level with the conduction band