Reset-while-address (RWA) driving scheme for high-speed address in AC plasma display panel with high Xe content

A new reset while-address (RWA) driving scheme for a single scan of an XGA grade (1024 /spl times/ 768) ac-plasma display panel (PDP) is proposed to improve the address discharge characteristics with a high Xe gas mixture (15%). To solve the conventional address problem of the gradual decrease in priming particles during an address period, the falling ramp waveform in the reset period is separated into two parts; the first part is applied at the beginning of the reset period and provides the priming particles during the first half of the address period, while the second part is applied in the middle of the address period to provide an additional supply of priming particles during the second half of the address period. As a result of adopting the proposed RWA driving scheme, address discharges were successfully produced within a 1.0-/spl mu/s pulsewidth due to the presence of priming particles throughout the address period.     

Synergistic Effect of Excited State Property and Aggregation Characteristic of Organic Semiconductor on Efficient Hole-Transportation in Perovskite Device

Intrinsic characteristics of organic semiconductor-based hole transport materials (HTMs) such as facile synthesizability, energy level tunability, and charge transport capability have been highlighted as crucial factors determining the performances of perovskite photovoltaic (PV) cells. However, their properties in the excited state have not been actively studied, although PVs are operated under solar illumination. Here, the characteristics of organic HTMs in their excited state such as transition dipole moment can be a decisive factor that can improve built-in potential of PVs, consequently enhancing their charge extraction property as well as reducing carrier recombination. Moreover, the aggregation property of organic semiconductors, which has been an essential factor for high-performance organic HTMs to improve their carrier transport property, can induce a synergistic effect with their excited state property for the high-efficiency perovskite PVs. Additionally, it is also confirmed that their optical bandgaps, manipulated to have their absorption in the UV region, are beneficial to block UV light that degrades the quality of perovskite, consequently improving the stability of perovskite PV in p–i–n configuration. As a proof-of-concept, a model system, composed of triarylamine and imidazole-based organic HTMs, is designed, and it is believed that this strategy paves a way toward high-performance and stable perovskite PV devices.     

Enhanced Optical Properties and Stability of CsPbBr3 Nanocrystals Through Nickel Doping

To improve the quantum efficiency and stability of perovskite quantum dots, the structural and optical properties are optimized by varying the concentration of Ni doping in CsPbBr₃ perovskite nanocrystals (PNCs). As Ni doping is gradually added, a blue shift is observed at the photoluminescence (PL) spectra. Ni-doped PNCs exhibit stronger light emission, higher quantum efficiency, and longer lifetimes than undoped PNCs. The doped divalent element acts as a defect in the perovskite structure, reducing the recombination rate of electrons and holes. A stability test is used to assess the susceptibility of the perovskite to light and moisture. For ultra-violet light irradiation, the PL intensity of undoped PNCs decreases by 70%, whereas that of Ni-doped PNCs decreases by 18%. In the water addition experiment, the PL intensity of Ni-doped PNCs is three times that of undoped PNCs. For CsPbBr₃ and Ni:CsPbBr₃ PNCs, a light emitting diode is fabricated by spin-coating. The efficiency of Ni:CsPbBr₃ exceeds that of CsPbBr₃ PNCs, and the results significantly differ based on the ratio. A maximum luminance of 833 cd m^–2 is obtained at optimum efficiency (0.3 cd A^–1). Therefore, Ni-doped PNCs are expected to contribute to future performance improvements in display devices.     

Highly Reliable Charge Trap-Type Organic Non-Volatile Memory Device Using Advanced Band-Engineered Organic-Inorganic Hybrid Dielectric Stacks

With the recent interest in data storage in flexible electronics, highly reliable charge trap-type organic-based non-volatile memory (CT-ONVM) has attracted much attention. CT-ONVM should have a wide memory window, good endurance, and long-term retention characteristics, as well as mechanical flexibility. This paper proposed CT-ONVM devices consisting of band-engineered organic–inorganic hybrid films synthesized via an initiated chemical vapor deposition process. The synthesized poly(1,3,5-trimethyl-1,3,5,-trivinyl cyclotrisiloxane) and Al hybrid films are used as a tunneling dielectric layer and a blocking dielectric layer, respectively. For the charge trapping layer, different Hf, Zr, and Ti hybrids are examined, and their memory performances are systematically compared. The best combination of hybrid dielectric stacks showed a wide memory window of 6.77 V, good endurance of up to 10⁴ cycles, and charge retention of up to 71% after 10⁸ s even under the 2% strained condition. The CT-ONVM device using the hybrid dielectric stacks outperforms other organic-based charge trap memory devices and is even comparable in performance to conventional inorganic-based poly-silicon/oxide/nitride/oxide/silicon structures devices. The CT-ONVM using hybrid dielectrics can overcome the inherent low reliability and process complexity limitations of organic electronics and expedite the realization of wearable organic electronics.     

Hetero‐Nanonet Rechargeable Paper Batteries: Toward Ultrahigh Energy Density and Origami Foldability

Forthcoming smart energy era is in strong pursuit of full‐fledged rechargeable power sources with reliable electrochemical performances and shape versatility. Here, as a naturally abundant/environmentally friendly cellulose‐mediated cell architecture strategy to address this challenging issue, a new class of hetero‐nanonet (HN) paper batteries based on 1D building blocks of cellulose nanofibrils (CNFs)/multiwall carbon nanotubes (MWNTs) is demonstrated. The HN paper batteries consist of CNF/MWNT‐intermingled heteronets embracing electrode active powders (CM electrodes) and microporous CNF separator membranes. The CNF/MWNT heteronet‐mediated material/structural uniqueness enables the construction of 3D bicontinuous electron/ion transport pathways in the CM electrodes, thus facilitating electrochemical reaction kinetics. Furthermore, the metallic current collectors‐free, CNF/MWNT heteronet architecture allows multiple stacking of CM electrodes in series, eventually leading to user‐tailored, ultrathick (i.e., high‐mass loading) electrodes far beyond those accessible with conventional battery technologies. Notably, the HN battery (multistacked LiNi_0.5Mn_1.5O₄ (cathode)/multistacked graphite (anode)) provides exceptionally high‐energy density (=226 Wh kg^?1 per cell at 400 W kg^?1 per cell), which surpasses the target value (=200 Wh kg^?1 at 400 W kg^?1) of long‐range (=300 miles) electric vehicle batteries. In addition, the heteronet‐enabled mechanical compliance of CM electrodes, in combination with readily deformable CNF separators, allows the fabrication of paper crane batteries via origami folding technique.     

Continuous Control of Charge Transport in Bi‐Deficient BiFeO3 Films Through Local Ferroelectric Switching

It is demonstrated that electric transport in Bi‐deficient Bi_1‐δFeO₃ ferroelectric thin films, which act as a p‐type semiconductor, can be continuously and reversibly controlled by manipulating ferroelectric domains. Ferroelectric domain configuration is modified by applying a weak voltage stress to Pt/Bi_1‐δFeO₃/SrRuO₃ thin‐film capacitors. This results in diode behavior in macroscopic charge‐transport properties as well as shrinkage of polarization‐voltage hysteresis loops. The forward current density depends on the voltage stress time controlling the domain configuration in the Bi_1‐δFeO₃ film. Piezoresponse force microscopy shows that the density of head‐to‐head/tail‐to‐tail unpenetrating local domains created by the voltage stress is directly related to the continuous modification of the charge transport and the diode effect. The control of charge transport is discussed in conjunction with polarization‐dependent interfacial barriers and charge trapping at the non‐neutral domain walls of unpenetrating tail‐to‐tail domains. Because domain walls in Bi_1‐δFeO₃ act as local conducting paths for charge transport, the domain‐wall‐mediated charge transport can be extended to ferroelectric resistive nonvolatile memories and nanochannel field‐effect transistors with high performances conceptually.     

Automatic Contrast Enhancement by Transfer Function Modification

In this study, we propose an automatic contrast enhancement method based on transfer function modification (TFM) by histogram equalization. Previous histogram‐based global contrast enhancement techniques employ histogram modification, whereas we propose a direct TFM technique that considers the mean brightness of an image during contrast enhancement. The mean point shifting method using a transfer function is proposed to preserve the mean brightness of an image. In addition, the linearization of transfer function technique, which has a histogram flattening effect, is designed to reduce visual artifacts. An attenuation factor is automatically determined using the maximum value of the probability density function in an image to control its rate of contrast. A new quantitative measurement method called sparsity of a histogram is proposed to obtain a better objective comparison relative to previous global contrast enhancement methods. According to our experimental results, we demonstrated the performance of our proposed method based on generalized measures and the newly proposed measurement.     

Analysis of Failure in Miniature X‐ray Tubes with Gated Carbon Nanotube Field Emitters

We correlate the failure in miniature X‐ray tubes with the field emission gate leakage current of gated carbon nanotube emitters. The miniature X‐ray tube, even with a small gate leakage current, exhibits an induced voltage on the gate electrode by the anode bias voltage, resulting in a very unstable operation and finally a failure. The induced gate voltage is apparently caused by charging at the insulating spacer of the miniature X‐ray tube through the gate leakage current of the field emission. The gate leakage current could be a criterion for the successful fabrication of miniature X‐ray tubes.     

Determination of the interface energy level alignment of a doped organic hetero-junction using capacitance–voltage measurements

A simple method based on capacitance–voltage (C–V) measurements is reported to determine the interface energy level alignment at the junction of 15 mol% Cs₂CO₃ doped 4,7-diphenyl-1,10-phenanthroline (BPhen) and 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN) fabricated under high vacuum. The junction properties, such as the depletion layer thickness, built-in potentials and vacuum level shift were calculated with simple Mott–Schottky and Poisson’s equations with the boundary condition of a continuous electric flux density using the information from the C–V data. The interface energy level alignment determined by this method is well matched with the one determined using the in situ ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS) experiments performed under ultra-high vacuum. This method can be applied to other semiconductor junctions such as the organic p–n homojunctions and heterojunctions with known energy levels, as long as the metal/semiconductor contact is Ohmic without referring to the photoemission spectroscopies. Moreover, the energy level alignment determined by the C–V measurement gives a more realistic result since the films for the measurements are formed under high vacuum which is a normal device fabrication environment rather than under ultra high vacuum.