Kinetics of sol-to-gel transition for poloxamer polyols

Kinetics of gelation for aqueous solutions of poloxamers 407 and 288 were determined using pulse shearometry. The principle of this method for determining the shear modulus of a semisolid was based on generation of a torsional force that is transmitted through the poloxamer sample at discrete time intervals. Three distinct linear phases were observed for the log dynamic shear modulus (G′) vs. time profiles as poloxamer 407 and 288 solutions of varying concentrations were allowed to passively warm at room temperature to a temperature exceeding the sol-to-gel transition temperature, T_m. The beginning of the second exponential phase coincided with the onset of the gelation process as determined by visual observation. Although gelation appeared visually to be complete at the beginning of the third exponential phase of the log G′ vs. time profiles, this last exponential phase may indicate the rate of formation of the polymer network. A comparison of poloxamer 407 [30% (w/w); T_m = 10.9°C] and poloxamer 288 [37% (w/w); T_m = 11.1°C] would suggest that the concentration of poloxamer required to achieve approximately the same gelation temperature for poloxamers having a similar ratio of poly(oxypropylene):poly(oxyethylene) units decreases with increasing molecular weight of the poly(oxypropylene) hydrophobe contained in the copolymer. Results of these preliminary studies suggest that the gelation process was significantly (p < .05) more rapid for poloxamer 407 at a 30% (w/w) concentration compared to a 30% (w/w) solution of poloxamer 288 when the poloxamer solutions were allowed to passively warm at room temperature. In addition, it appears that the rate of gelation for the poloxamer solutions studied was dependent on the rate of heat transfer through the polymer solution.     

Cerebral angioplasty in a patient with vascular dementia

A mechanical computerized three-dimensional scanner with a resolution of 1 micron was used to assess loss of enamel caused by orthodontic bonding and debonding. A total of 2646 measurements was performed on six human premolars. The results showed an average loss of enamel of 7.4 microns. The range was between 1 and 52 microns, which may account for discrepancies with earlier studies that measured only a few points per tooth surface.     

Depth resolution calculations for heavy-ion microbeam RBS analysis

A detailed study has been made on the use of MeV heavy ions (Z₁ = 6–8) for microbeam Rutherford backscattering (RBS) analysis, to improve the depth resolution of this technique. The algorithm for determination of the depth resolution was created and applied to the Zagreb microbeam facility. Theoretical estimates of depth resolution for C and O ion RBS analysis of thin oxide films and semiconductors, using annular silicon surface barrier detector (SSBD), are compared to those for proton backscattering analysis. Depth resolution in certain cases may be improved by increasing the heavy-ion energy. Therefore, by the proper choice of the heavy ion and the heavy-ion energy, the depth resolution may be improved, maintaining the efficiency of the RBS method.     

Amplitude aperture-distribution control in displaced-axistwo-reflector antennas

A design method for improving the efficiency and reduction of sidelobes in displaced-axis two-reflector antennas is presented. The method is based on an analysis of the geometrical-optics field transformation in the displaced-axis two-reflector arrangement. The principal difference of the displaced-axis antenna from the Cassegrain/Gregory two-reflector antenna is pointed out. While decreasing the level of illumination of the subreflector edge in the Cassegrain/Gregory antenna leads to decreasing the sidelobe levels, and, respectively, the efficiency of the antenna system, in the displaced-axis antenna, decreasing the level of illumination of the subreflector leads to an increased level of sidelobes and an essentially nonuniform amplitude distribution in the aperture. The aperture-amplitude-distribution dependence of the illumination level of the subreflector edge in displaced-axis antennas is much stronger than in Cassegrain/Gregory antennas     

High ratios of free to total insulin-like growth factor-I in early infancy

A case of huge desmoid tumor successfully treated by hyperthermoradiotherapy is described. A 23-year-old man with familial adenomatous polyposis was operated upon for a desmoid tumor in the mesenterium involving the right kidney and small intestine in 1988. In 1990, the tumor recurred and could not be resected because of the involvement of the vena cava. The tumor grew larger and larger, and occupied two-thirds of the right lower quadrant. Several therapies using sulindac, tamoxifen, prednisolone, indomethacin, luteinizing hormone-releasing hormone analogue, and ascorbate were all ineffective. Finally, the combination of radiation and hyperthermia was used over a 6-month period. At the end of the hyperthermoradiotherapy, the tumor in the abdominal wall was markedly reduced in size, and the protruded abdominal wall became flat. To our best knowledge, this is the first report of the successful treatment of a huge desmoid tumor by hyperthermoradiotherapy.     

Interconnection-free biomolecular computing

The basic concept of interconnection-free biomolecular computing and its realization in a computing model based on the massive, natural parallelism between enzymes and their substrates are described. An approach to implementing the model is presented. The approach involves two primitive switching functions: detecting specific substrates in solution using enzyme-based biosensors and producing specific substrates in response to the electric signal from the biodevice's selection function. The major challenges involved in implementing the computational model are reviewed     

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping andInGaAs emitter contacts

The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×10⁸ h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology