The beta adrenoreceptor antagonist, nipradilol, preserves the endothelial nitric oxide response in atherosclerotic vessels of rabbit

We evaluated the effects of nipradilol, a beta-adrenoreceptor antagonist which contains a nitroxy residue, for vascular response in atherosclerosis of rabbits. Four groups of rabbits received different diets (standard diet; standard diet plus 10 mg/kg/day nipradilol; atherogenic diet [standard diet plus 1% cholesterol]; atherogenic diet plus 10 mg/kg/day nipradilol) for 9 weeks. Plasma lipids, blood pressure, vascular function, nitric oxide (NO), activity of NO synthase, cGMP, and histological atherosclerotic changes were evaluated. Neither the atherogenic diet nor nipradilol treatment affected significantly the animals' body weight, blood pressure, or heart rate. The atherogenic diet increased total cholesterol and triglycerides, which were not altered by nipradilol. The atherogenic diet diminished the acetylcholine-induced NO mediated relaxation. Nipradilol treatment restored this relaxation. Analyses using a NO-sensitive selective electrode showed that nipradilol released NO in the presence of cells and that NO release was greater in atherosclerotic aorta with than without nipradilol treatment. Nipradilol treatment increased the basal NO release as evaluated by the aortic tissue cyclic GMP (cGMP) levels in atherosclerotic vessel, and reduced the esterified cholesterol levels in atherosclerotic vessel. Conclusively, NO released by nipradilol may protect endothelium derived relaxation in atherosclerotic vessels, and may partially inhibit the accumulation of cholesterol in the atherosclerotic lesions.     

Determination of optimal sending voltage profile in distribution systems with distributed generators

Sending voltage profile of distribution feeder is controlled by changing a tap of distribution transformer. In a distribution network with distributed generators, for reasons of effect of reversed flows from them and existence of a great number of sending voltage profile candidates, it is not easy to control sending voltage profile within the acceptable voltage limit. In this paper, in order to determine the optical sending voltage profile of distribution transformer in a distribution network with distributed generators, the authors propose a new method to determine the optimal sending voltage profile so as to minimize the total number of tap position's change per day under constraints of acceptable voltage limit. In the proposed method, after calculating acceptable range of three‐phase voltage of distribution feeder, the optimal profile of tap position within the calculated acceptable voltage range is determined among these candidates by using reduced ordered binary decision diagram (ROBDD) which is an efficient enumeration algorithm. In order to check the validity of the proposed method, numerical simulations are carried out for a distribution network model with a distributed generator. © 2007 Wiley Periodicals, Inc. Electr Eng Jpn, 161(2): 16–24, 2007; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20393     

Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.     

Block Copolymer Permeable Membrane with Visualized High‐Density Straight Channels of Poly(ethylene oxide)

A simple fabrication, scalable to centimeter scale, of a permeable membrane made of block copolymer containing molecular transport channels is demonstrated by coating photo‐crosslinkable liquid‐crystalline block copolymer, consisting of poly(ethylene oxide) (PEO) and poly(methacrylate) (PMA) bearing stilbene (Stb) mesogens in the side chains (PEO₁₁₄‐b‐PMA(Stb)₅₂), onto a sacrificial cellulose acetate film substrate. After thermal annealing, perpendicularly aligned and hexagonally arranged PEO cylindrical domains with a surface density of 10¹¹ cm^?2 were formed and then fixed efficiently by photo‐crosslinking the stilbene moieties in the PMA(Stb) domains by [2 + 2] dimerization. The fully penetrating straight PEO cylindrical domains across the 480‐nm‐thick membrane were well‐defined and visualized as molecule‐transport channels. After exfoliated by removal of the cellulose acetate layer, the membrane could be transferred onto another substrate by either scooping or a horizontal lifting method. Throughout the processes, the fully penetrating PEO channels across the membrane are preserved to open at both ends. A simple permeation experiment demonstrates that rhodamine dyes permeate efficiently through the PEO cylindrical channels of the annealed membrane but not across a non‐annealed one.     

Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

Electrical and physical characteristics of the Al₂O₃/InGaAs interfaces with (1 1 1)A and (1 0 0) orientations were investigated in an attempt to understand the origin of electron mobility enhancement in the (1 1 1)A-channel metal-insulator-semiconductor field-effect-transistor. The (1 1 1)A interface has less As atoms of high oxidation states as probed by X-ray photoelectron spectroscopy. The electrical measurements showed that energy distribution of the interface traps for the (1 1 1)A interface is shifted toward the conduction band as compared to that for the (1 0 0) interface. Laterally-compressed cross-section transmission electron microscopy images showed that the characteristic lengths of the interface roughness are different between the (1 1 1)A and (1 0 0) interfaces. The contributions of the Coulomb and roughness scattering mechanisms are discussed based on the experimental results.     

Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory

Polymer ferroelectric-gate field effect transistors (Fe-FETs) employing ferroelectric polymer thin films as gate insulators are highly attractive as a next-generation non-volatile memory. For minimizing gate leakage current of a device which arises from electrically defective ferroelectric polymer layer in particular at low operation voltage, the materials design of interlayers between the ferroelectric insulator and gate electrode is essential. Here, we introduce a new solution-processed interlayer of conductive reduced graphene oxides (rGOs) modified with a conjugated block copolymer, poly(styrene-block-paraphenylene) (PS-b-PPP). A FeFET with a solution-processed p-type oligomeric semiconducting channel and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) insulator exhibited characteristic source–drain current hysteresis arising from ferroelectric polarization switching of a PVDF-TrFE insulator. Our PS-b-PPP modified rGOs (PMrGOs) with conductive moieties embedded in insulating polymer matrix not only significantly reduced the gate leakage current but also efficiently lowered operation voltage of the device. In consequence, the device showed large memory gate voltage window and high ON/OFF source–drain current ratio with excellent data retention and read/write cycle endurance. Furthermore, our PMrGOs interlayers were successfully employed to FeFETs fabricated on mechanically flexible substrates with promising non-volatile memory performance under repetitive bending deformation.     

Sugar-Induced Chiral Orientation of Boronic-Acid-Appended Amphiphile Clusters Formed in the Dipalmitoylphosphatidylcholine (DPPC) Membrane

A boronic-acid-appended amphiphile bearing an azobenzene chromophore in the chain center ( 3 ) was synthesized. Although 3 could not form the membrane-like, ordered aggregate by itself, it formed a phase-separated aggregate in a dipalmitoylphosphatidylcholine (DPPC) matrix membrane. When saccharides were added, the boronic acid group reversibly formed the saccharide complexes, and 3 in the DPPC matrix membrane became CD-active with the appearance of exciton-coupling bands. Comparison of the saccharide absolute configuration with the CD intensity established that the saccharide possessing the OH group (as 3-OH, 4-OH, and 5-CH₂OH) in the same side as the cis-1,2-diol gives the strong CD band. Judging from the structure of 3 –saccharide complexes, these “same-side” OH groups can enjoy intermolecular hydrogen-bonding interactions, which eventually induce the chiral orientation of azobenzene chromophores. This is a novel membrane system useful to read out the information stored in the saccharide structure and to create novel membrane structures by added saccharides.