High-Speed X-Cut Thin-Sheet LiNbO3 Optical Modulator With Folded Structure

We propose a small-footprint X-cut thin-sheet lithium niobate optical modulator with high-speed and low-driving-voltage characteristics. Since an optical waveguide is folded by a mirror placed at one edge of the modulation chip, the chip can be shortened by about half. In addition, a wide modulation bandwidth can be achieved, because the path-length difference between the optical waveguide and the coplanar-waveguide (CPW) electrode is decreased to as short as possible by placing the CPW electrode as far as possible along the optical waveguide in the folded portion, and the microwave effective index is set to realize effective velocity matching between the lightwave and the microwave. A small footprint of 1.78 times 29 mm, a low half-wave voltage of 2.0 V at dc, and a 3-dBe modulation bandwidth of 20 GHz were obtained.     

Millimeter and submillimeter-wave quasi-optical oscillator withmulti-elements

Multielement oscillators with a quasi-optical resonator are reported. The resonator consists of a Fabry-Perot cavity with a grooved mirror (grating) and a concave mirror. It is possible to mount solid-state devices (Gunn diode, GaAs MESFET, etc.) in the grooved mirror. The oscillator has the capability for power-combining of solid-state sources in the millimeter- and submillimeter-wave regions     

Electron microscopy at a sub-50 pm resolution

An aberration-corrected electron microscope developed in CREST project has been applied for imaging atoms and clusters buried inside crystals. The resolution of the microscope in scanning transmission electron microscopy (STEM) has experimentally proved to be better than 47 pm by use of a cold-field emission gun at 300 kV. The high resolution has given an advantage for imaging light elements such as lithium atoms discriminating one by one. Moreover, a three-dimensional structure imaging has been demonstrated for dopant clusters by a sub-50 pm STEM, using its high depth resolution.     

Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

Annealing conditions of CdTe layers grown on Si substrates by metalorganic vapor-phase epitaxy were studied. Typically, 3-μm-thick n-type (211) CdTe layers were annealed for 60 s in flowing hydrogen at atmospheric pressure by covering their surfaces with bulk CdTe wafers. At annealing temperatures above 700°C, improvement of crystal quality was confirmed from full-width at half-maximum values of double-crystal rocking-curve measurements and x-ray diffraction measurements. Photoluminescence measurements revealed no deterioration of electrical properties in the annealed n-CdTe layers. Furthermore, annealing at 900°C improved the performance of radiation detectors with structure of p-like CdTe/n-CdTe/n ⁺-Si substrate.     

High-speed and low-driving-Voltage thin-sheet X-cut LiNbO/sub 3/ Modulator with laminated low-dielectric-constant adhesive

We present a novel thin-sheet X-cut LiNbO/sub 3/ optical modulator structure which can be fabricated by precise polishing and lapping to obtain a thinner LiNbO/sub 3/ substrate for a lower driving voltage in addition to velocity matching and impedance matching. We demonstrated that the fabricated modulator had a driving voltage V/spl pi/ of 2 V and zero chirp for 40-Gb/s operation and had a high potential for suppressed dc drift, and long-term reliability.     

Recovery of 80 GHz optical clock from 160 Gbit/s data using regeneratively modelocked laser diode

An 80 GHz optical clock signal was successfully recovered from a 160 Gbit/s data stream using a regeneratively modelocking scheme of a semiconductor modelocked laser (MLLD). To handle an 80 GHz electrical signal, the MLLD integrated with a high-mesa electroabsorption modulator and a W-band UTC-PD module are used in this scheme.     

Design criteria of 1.3-μm multiple-quantum-well lasers forhigh-temperature operation

We present design criteria for high-temperature operation in 1.3-μm multiple-quantum-well (MQW) lasers from the viewpoint of the light output power penalty, i.e., the change in the light output power at a fixed drive current with increasing temperature. It is shown that not only the characteristic temperature (T₀) but also internal loss dependence on temperature (γ) and threshold current (I_th) are significant parameters for reducing the power penalty. We compare the high-temperature performance of InGaAsP-based and AlGaInAs-based MQW lasers and demonstrate that AlGaInAs-based lasers have more potential in terms of the power penalty. Furthermore, we also demonstrate that the power penalty can be reduced by introducing a buried-heterostructure (BH) structure into AlGaInAs-based lasers. From these results, we conclude that the AlGaInAs-based BH lasers are promising for high-temperature performance     

Temperature influence on performance degradation of hydrogenated amorphous silicon solar cells irradiated with protons

This paper reports temperature influence on radiation degradation of hydrogenated amorphous silicon (a‐Si : H) solar cells. Degradation behaviors of a‐Si : H solar cells irradiated with protons at 331 K are compared with that at 298 K (room temperature). Variations with time in the post‐irradiation electrical properties are also investigated. It is found that the radiation degradation of the electrical properties at 331 K is significantly smaller than that at room temperature. Also, all the electrical properties (short‐circuit current, open‐circuit voltage, output maximum, and fill factor) recover with time after irradiation even at room temperature. The characteristic time of thermal annealing of short‐circuit current is larger as the temperature is higher. These results indicate that temperature during irradiation and elapsed time from irradiation to measurement is an important parameter for radiation degradation of a‐Si : H solar cells. Therefore, these parameters should be controlled in conducting the ground radiation tests. Copyright © 2012 John Wiley & Sons, Ltd.     

Advanced Method for Measuring Proteinase A in Beer and Application to Brewing*

Proteinase A, excreted from yeast cells into beer during fermentation in the brewing process, has been shown to degrade foam-active proteins and to decrease foam stability. In order to improve the measurement of this enzyme in beer, a new fluorescent peptide, MOCAc-Ala-Pro-Ala-Lys-Phe-Phe-Arg-Leu-Lys (Dnp)-NH₂, was synthesised and applied to the accurate and rapid estimation of proteinase A in commercial beer and fermenting wort. This novel substrate is several hundred times more sensitive to proteinase A than other previously reported synthetic substrates or native protein substrates. The concentration of proteinase A in beer is closely related to foam stability and proteinase A activity was found to increase gradually during fermentation. The concentration of proteinase A excreted from yeast cells is also closely related to the vitality of pitching yeast cells. This new method was successfully applied to the evaluation of yeast vitality and the development of optimum yeast handling procedures.     

Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate

We present reverse bias current (dark current) characteristics of a two-dimensional monolithic pixel-type nuclear radiation detector array fabricated using metalorganic vapor-phase epitaxy (MOVPE)-grown thick CdTe epitaxial layers on Si substrate. The (14?×?8) pixel array was formed by cutting deep vertical trenches using a dicing saw, where each pixel possesses a p-CdTe/ n-CdTe/n ⁺-Si heterojunction diode structure. The dark currents showed pixel-to-pixel variations when measured at higher applied biases exceeding 100?V. The dark current had a dependence on the pixel thickness, where pixels with lower CdTe thickness exhibited higher currents. Moreover, the temperature dependence of the dark current revealed that a deep level with activation energy of around 0.6?eV is responsible for the observed dark currents and their pixel-to-pixel variation. We discuss that the effective ratio of Te to Cd at the growth surface is a major factor that controls the thickness variation, and is also responsible for the formation of 0.6?eV deep levels.