X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.     

Water-assisted cold isostatic pressing to enhance sinterability of alumina ceramics

Water-Assisted cold isostatic Pressing (WAP) enabled pressure-less sintering of fine grained (0.6 μm) and nearly full dense (99.3%) weakly translucent alumina ceramics. As a term of comparison, Dry Pressed (DP) samples, prepared under identical processing conditions, maintained an opaque appearance, and their relative density did not exceed 97.7%. The enhanced compaction of WAP allowed to lower the sintering temperature down to 1350°C, which is approximately 100–150°C lower than that of DP powder. WAP samples resulted in an apparent activation energy for sintering (640 kJ/mol) matching literature values, confirming that the enhanced sinterability was attributed to an improved green density rather than a change in sintering mechanisms.