Near-ideal RF upconverters

This paper presents experimental results on the application of a new quadrature modulator compensator, which allows existing quadrature modulators to achieve near-ideal RF upconversion over a wide bandwidth. A test setup using an arbitrary waveform generator and a spectrum analyzer shows that over 70 dB of spurious-free dynamic range may be obtained over a bandwidth of 1.2 MHz using an off-the-shelf Mini Circuits in-phase/quadrature modulator operating at 895 MHz. A conventional compensator provides only 45 dB of sideband suppression in the same experimental setup.     

Performance of TCP protocols in deep space communication networks

The communication requirements for space missions necessitate to address the problems due to deep space communication networks. In this letter, the effects of slow start algorithm, propagation delay and the link errors on the throughput performance of transport layer protocols are investigated in deep space communication networks. The objective of this letter is to demonstrate through experimental results that existing TCP protocols are far from satisfying the deep space communication requirements and point out the urgent need for new TCP solutions.     

Floating-island TFT leakage caused by process step reduction

The leakage mechanism for a top-gate thin-film transistor (TFT) produced using the fewest process steps in the industry is analyzed in order to achieve a high-contrast liquid crystal display (LCD). Using a T-shaped TFT structure, the OFF and ON channel lengths are defined independently, so that the leakage can be reduced with no ON current decrease     

CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-/spl mu/m VCSELs grown by MOCVD

We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-/spl mu/m vertical-cavity surface-emitting laser operating continuous wave up to 35/spl deg/C. The structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In/sub 0.4/Al/sub 0.6/As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.     

Experimental Study of a Thermoelectric Generation System

A flat wall-like thermoelectric generation system is developed for applications in exhaust heat of kilns. The design of the whole experimental setup is presented. The essential performance of the thermoelectric generation system is tested, including open-circuit voltage, output power, and system conversion efficiency. The results illustrate that, when heat source insulation is not considered, the system conversion is efficient at hot-side temperatures between 120°C and 150°C. In addition, the nonuniformity of heat transfer is found to significantly affect the power-generating ability of the system. System-level simulation is carried out using a quasi-one-dimensional numerical model that enables direct comparison with experimental results. The results of both experiment and simulation will provide a foundation to improve and optimize complex thermoelectric generation systems.     

Monolithic Integrated Circuits Based on Gallium Nitride for Short-Range Radar and Communications in the 22–25 GHz Frequency Range

Russian Microelectronics - A set of monolithic integrated circuits (MICs) in the 22–25 GHz range based on gallium nitride nanoheterostructures on sapphire substrates is designed, produced,...     

Model of boron diffusion from gas phase in silicon carbide

Boron diffusion from the gas phase in silicon carbide is described on the basis of a two-component model. “Shallow” boron, i.e., boron at silicon sites, is a slow component with a high surface concentration. Its diffusivity is proportional to the concentration of positively charged intrinsic point defects, which are presumably interstitial silicon atoms. “Deep” boron, i.e., impurity-defect pairs of boron-carbon vacancy, is a fast component with lower surface concentration. The ratio between the surface concentrations of the components depends on the pressure of silicon or carbon vapors in the gas phase. The diffusion and interaction of components are described by the set of diffusion-reaction equations. The diffusion retardation observed on the concentration-profile tail is related to the capture of impurity-defect pairs and excess vacancies by traps of background impurities and defects.     

Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE

Laser-power converters for the wavelength λ = 808 nm are fabricated by liquid-phase epitaxy (LPE) on the basis of n-Al_0.07GaAs–p-Al_0.07GaAs–p-Al_0.25GaAs single-junction heterostructures. The converters are tested with uniform (pulse simulator) and partly nonuniform (laser beam) illumination distribution over the photoreceiving surface. In the former case, a monochromatic efficiency of η = 53.1% is achieved for samples with an area of S = 4 cm² at a power of 1.2 W. At S = 10.2 mm² the efficiency is 58.3% at a laser power of 0.7 W.