首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   680562篇
  免费   119929篇
  国内免费   83804篇
电工技术   70295篇
综合类   78408篇
化学工业   82422篇
金属工艺   59129篇
机械仪表   44057篇
建筑科学   50679篇
矿业工程   34685篇
能源动力   20131篇
轻工业   74659篇
水利工程   24268篇
石油天然气   29452篇
武器工业   11347篇
无线电   79729篇
一般工业技术   66301篇
冶金工业   27018篇
原子能技术   10003篇
自动化技术   121712篇
  2024年   5499篇
  2023年   12093篇
  2022年   24779篇
  2021年   31051篇
  2020年   26187篇
  2019年   26664篇
  2018年   28728篇
  2017年   32857篇
  2016年   30537篇
  2015年   38821篇
  2014年   44160篇
  2013年   48706篇
  2012年   58222篇
  2011年   57200篇
  2010年   54749篇
  2009年   50306篇
  2008年   50050篇
  2007年   48951篇
  2006年   41407篇
  2005年   34213篇
  2004年   28220篇
  2003年   19465篇
  2002年   18271篇
  2001年   16533篇
  2000年   13575篇
  1999年   7396篇
  1998年   4557篇
  1997年   4001篇
  1996年   3725篇
  1995年   3767篇
  1994年   3057篇
  1993年   2893篇
  1992年   2785篇
  1991年   2010篇
  1990年   1613篇
  1989年   1559篇
  1988年   1145篇
  1987年   397篇
  1986年   359篇
  1985年   245篇
  1984年   199篇
  1983年   153篇
  1982年   193篇
  1981年   236篇
  1980年   267篇
  1979年   174篇
  1976年   230篇
  1975年   212篇
  1972年   237篇
  1960年   206篇
排序方式: 共有10000条查询结果,搜索用时 31 毫秒
951.
孟洛明 《世界电信》1996,9(4):25-27
本文叙述了智能网的业务管理系统所实现的3种功能:业务管理功能,网络管理功能和业务管理访问功能,还介绍了业务管理和网络管理之间的关系,SMS的集中式和分布式两种体系结构及业务管理功能的设计方法和进一步研究方向。  相似文献   
952.
The hydrolysis of isocyanic acid in the gaseous phase has been investigated at temperatures between 553 and 613 K by mass spectrometry and evaluated to obtain the corresponding kinetic data. The reaction order and reaction constant have been determined. Finally, the influence of water on the catalysed formation of melamine from isocyanic acid under the operating conditions employed has been investigated in order to determine whether there is a need to try the process gas.  相似文献   
953.
Thin film formation of graphite by chemical vapor deposition using 2-methyl-1,2′-naphthyl ketone as a starting material was carried out on Ni film substrates. On Ni films directly deposited on quartz glass, the graphite films were obtained when the Ni film thickness was above 1 000 Å and above 5 000 Å at 700 °C and 1 000 °C, respectively. Depositions on thinner Ni film substrates comprise amorphous carbon (a-C) or graphite tubes which was owing to the thermal coagulation of the Ni film into droplets. On the other hand, graphite film was obtained on the Ni film with thickness 10 Å when a-C was inserted between the Ni film and the quartz glass. The coagulation of the Ni film is considered to be avoided by inserting a-C layer.  相似文献   
954.
A general numerical model is described for the dissolution kinetics of spherical particles in binary systems for any combination of first order reactions at the particle-matrix interface and long distance diffusion within the matrix. The model is applicable to both finite and infinite media and handles both complete and partial particle dissolution. It is shown that interfacial reactions can have a strong effect on the dissolution kinetics, the solute concentration at the particle-matrix interface and the solute concentration profile in the matrix.  相似文献   
955.
王界平  王清平 《微电子学》1996,26(3):150-152
SOI材料的全介质隔离技术与高频互补双极工艺的结合是研制抗辐照能力强、频带宽、速度高的集成运算放大器的理想途径,从实验的角度提出了一种SOI材料全介质隔离与高频互补双极工艺兼容的工艺途径。  相似文献   
956.
吴正立  严利人 《微电子学》1996,26(3):189-191
隧道小孔中超薄SiO2的生长是EEPROM电路制造的关键工艺之一。采用SUPREM-Ⅲ工艺模拟程序对超薄SiO2的热生长进行了工艺模拟,经过大量的工艺实验及优化,确定了超薄SiO2的最佳生长条件,生长出的SiO2性能良好,完全可满足EEPROM研制的要求。  相似文献   
957.
差分式连续时间电流型CMOS跨导—电容低通滤波器   总被引:1,自引:0,他引:1  
郭静波  戴逸松 《微电子学》1996,26(6):359-362
应用信号流图法对电流系统传递函数直接模拟,提出了一种新颖的差分式连续时间电流模式CMOS跨导-电容低通滤波器的实现方案。由于采用了差分式结构和电流负反馈,整个电路方案具有差分式结构和电流型电路的优点;并且仅使用最少数量的OTA和电容,与数字CMOS工艺兼容,适于全集成。面向实际电路完成了MOS管级的计算机仿真,结果表明,所提出的电路方案正确有效  相似文献   
958.
Recrystallization/precipitation behaviour in microalloyed steels   总被引:3,自引:0,他引:3  
Microalloyed high-strength low-alloy (HSLA) steels contain additions of Nb, V, Ti, or in combination, in amounts of 0.01 to 0.1 weight percent to improve mechanical properties, which are strongly dependent on the thermomechanical interaction taking place in the course of rolling mill processes. The recrystallizatian of hat-twisted austenite has been investigated in a cylindrical specimen (f 6×50 mm) machined from hat rolled plates of 0,052 wt % Niobium microalloyed steel. Continuous and interrupted torsion test were carried out in the temperature range 1123 K to 1173 K after a solution treatment of 1.5 minutes at 1423 K and torque-twist data were analysed. The various methods were discussed for obtaining results from torsion tests. The effect of precipitation kinetics was appreciated by way of connection tp/tp(red), where tp is the experimental measured time for the peak stress and tp(red) is the newly defined reduced time. The softening ratio X and time t0.05R for start of static recrystallization were established.

The correlation between precipitation and recrystallization is presented as a graphs for chosen requirements (temperature of austenitization, carbon and niobium content and strain rate). If temperature goes below 850°C, the restoration processes are hardly suppressed, both are limited by diffusion and Nb(CN) precipitation, which are extended dynamically in the range of strains rates 10−2 to 1 s−1.

In the present paper, an attempt is made to derive the PRTT diagram and to define all mathematical equations for describing recrystallization times t0.05R, t0.5R, t0.95R and t0.05P for the start of precipitation. In real metal forming processes such as the hot rolling of plates or strips the knowledge of these parameters and results is extremely important for the the correct microstructure and sheet quality to be obtained.  相似文献   

959.
Thermal conductivity of apple and potato samples was measured by means of a specifically designed apparatus based on Fitch's method. The thermal conductivity was determined at various moisture contents at the sample mean temperature of 30 °C. As expected the conductivity decreases with the decrease in moisture content. Thermal conductivity data were correlated with moisture content using a straight line.  相似文献   
960.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号