Measuring efficiency of power plants in Israel by data envelopmentanalysis

An application of data envelopment analysis (DEA) for measuring and evaluating the operating efficiency of power plants in the Israeli Electric Corporation (IEC) is presented. Emphasis is placed on the process of screening the list of potential input and output factors and determining the most relevant ones. Special attention is given to the qualitative factor concerning air pollution, which is treated as a categorical variable. The incorporation of `standard data' is examined and the results are analyzed     

Maximum and minimum return losses from a passive two-port networkterminated with a mismatched load

An analytical expression is derived for determining load-reflection coefficient phase-angle values that will lead to maximum and minimum return losses from a terminated two-port network. The expression is derived in terms of two-port network S-parameters and a load whose reflection-coefficient magnitude is a constant but can be any value greater than zero and less than or equal to unity. The equation is useful for cases where it is desirable to know how to position a load (1) to obtain maximum return loss for network-matching purposes or (2) to obtain minimum return loss for some types of reflector antenna applications. Two examples are given: One shows that for some types of reflector antennas with a mesh-type surface that is backed by another reflecting surface, a resonance phenomenon can occur and cause unexpectedly large dissipative losses (>30 dB) to occur. The other example shows that when a particular type of reflector antenna with a dielectric layer becomes wet from rain or condensation, large (>10 dB) signal losses can occur. For both examples, equations presented in this article were used to calculate the exact load-reflection coefficient phase values that led to worst-case return loss values. In practical situations, once the phenomenon is understood and predictable, steps can be taken to avoid these resonance regions     

Ultrahigh and controllable drain current peak-to-valley ratio innegative resistance field-effect transistors with a strained InGaAschannel

Negative resistance field-effect transistor (NERFET) devices using either strained InGaAs or unstrained GaAs channel layers have been fabricated. The strained InGaAs channel NERFET's show strong negative differential resistance and large drain current peak-to-valley ratio. The peak-to-valley ratio of the InGaAs channel NERFET is more than 3000 at room temperature and larger than one million (10⁶) at 77 K. The peak-to-valley ratio is controllable by adjusting the collector voltage     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

Development of a Trans-Mucosal Controlled-Release Device for Systemic Delivery of Antianginal Drugs Pharmacokinetics and Pharmacodynamics

Oral mucosa is well-known to be one of the best routes for drug absorption. But very few R & D works have been initiated to investigate the feasibility of using this site to control drug delivery. A transmucosal controlled-release device, which is capable of achieving excellent absorption and controlled release of drugs, has been developed. The device is a tabletshaped mucoadhesive system which is composed of two layers. The upper layer is a fast-release layer and the lower layer is a sustained-release layer, and designed to be applied between buccal and gingival mucosae. Both layers are formulated from synthetic polymers to control the release of drugs.

Isosorbide dinitrate(ISDN), a well-documented antianginal drug, is known to be susceptible to extensive presystemic elimination when taken orally. It was used as the candidate drug and the systemic bioavailability was studied in human and observed to be improved by as much as 5 fold when compared to a marketed oral sustained-release tablet; On the other hand, much smaller amount of metabolites was formed. The plasma profile of ISDN has also been observed to be substantially prolonged (12 hrs as compared to less than 1 hr for sublingual tablet and spray product on the market). These observations have demonstrated that this device is capable of not only bypassing hepatic “first-pass” metabolism but also having a sustainedrelease property of prolonging the release of ISDN.

Clinical studies performed in the anginal patients for up to one year have demonstrated the therapeutic benefits of this device in achieving a substantial reduction in the frequency of anginal attacks.

This type of device was also applied to the systemic delivery of another antianginal drug, Nifedipine, by employing a formulation with longer sustained drug release property. Again, the clinical results demonstrated that a prolonged duration of therapeutic plasma concentration has also been accomplished.     

Mechanical stress control in a VLSI-fabrication process: a method for obtaining the relation between stress levels and stress-induced failures

An ideal fabrication process is designed to minimize mechanical stress in semiconductor devices and to improve device reliability. Mechanical stress levels were predicted by in-house simulations supported by a thin-film database. These stress levels were correlated with stress-induced defects by TEM analysis supported by fail bit addressing on matured megabit SRAMs. Amorphous-doped silicon film with various annealing temperatures were used for the gate electrode to change the mechanical stress in devices and to get the direct relationship between predicted stress levels and stress related defects. The authors describe brief guidelines for suppressing dislocations in the small geometry shallow-trench isolation process utilizing this system. Polysilicon thickness in the W-polycide gate electrode is designed to minimize mechanical stress in the gate oxide and to suppress the gate oxide failure in probe and class tests. Moreover, critical stress generates dislocations during post source/drain ion implantation anneal obtained by a ball indentation method. This indicated that lower temperature anneal is effective in suppressing the dislocations. A two-step anneal was introduced to suppress dislocations and to enable higher ion activation.     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.     

Neutron Stress Measurement of W‐Fiber Reinforced Cu Composite

Stress measurement methods using neutron and X‐ray diffraction were examined by comparing the surface stresses with internal stresses in the continuous tungsten‐fiber reinforced copper‐matrix composite. Surface stresses were measured by X‐ray stress measurement with the sin²ψ method. Furthermore, the sin²ψ method and the most common triaxal measurement method using Hooke's equation were employed for internal stress measurement by neutron diffraction. On the other hand, microstress distributions developed by the difference in the thermal expansion coefficients between these two phases were calculated by FEM. The weighted average strains and stresses were compared with the experimental results. The FEM results agreed with the experimental results qualitatively and confirmed the importance of the triaxial stress analysis in the neutron stress measurement.     

Photoinduced bidirectional phase transitions in single crystals of polydiacetylenes

Photoinduced phase transitions have been observed between the two phases in single crystals of polydiacetylenes with side-groups of alkylurethanes. The threshold of the excitation intensity for the photochromism is extremely low, one absorbed photon per 140 repeated backbone units, indicating a collective nature of the photoconversion. The excitation spectra for the converted fraction clearly show that the photoinduced phase transition is mediated by photogeneration of polaronic species and not of singlet excitons.     

Development of a current detection type cable fault locator

A cable fault location instrument based on the detection of traveling wave currents was developed. It is different from the conventional pulse radar method based on voltage detection. Measurement is automated, and the distance to the fault point is displayed by merely pushing a switch. In a branched or crossbonded line, the fault point can be located without interference from the branched or the crossbonded point. Tests performed in both real and simulated lines confirmed the practical utility of this instrument