Schrifttumsberichte

Ohne Zusammenfassung     

Canadian Field Soils I. Mineral Composition by XRD/XRF Measurements

Forty Canadian soils were laboratory tested for the presence of quartz and other minerals using X-ray diffraction/X-ray fluorescence techniques. On average, the highest quartz content was observed in soil samples from sites in Nova Scotia followed by Prince Edward Island sites, whereas soil sample from British Columbia sites had the lowest quartz content. The second most abundant mineral was albite that mainly occurred in soil samples from Ontario and Quebec sites. Illite was the third most abundant and prevailed in soils mainly from British Columbia and New Brunswick sites. Soil samples from British Columbia sites had the highest combined clay and silt content and were composed of illite, albite, kaolinite, and chlorite. The lowest clay content was found in the samples from the Quebec sites. The highest microcline (a potassium feldspar) content was observed in Quebec, Ontario, and Prince Edward Island sites. In contrast to other provinces, samples from Quebec and Ontario sites also included amphibole. Soil samples from Saskatchewan and Manitoba sites also comprised carbonates, i.e., calcite and dolomite. Iron oxides (e.g., goethite) were present in all soils, except the Quebec sites, but their occurrence was rather insignificant.     

A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power mm-wave digital and RF circuit capability

A 90-nm silicon-on-insulator (SOI) CMOS system on-chip integrates high-performance FETs with 243-GHz F/sub t/, 208-GHz F/sub max/, 1.45-mS//spl mu/m gm, and sub 1.1-dB NFmin up to 26 GHz. Inductor Q of 20, VNCAP of 1.8-fF//spl mu/m/sup 2/, varactor with a tuning range as high as 25:1, and a low-loss microstrip. Transmission lines were successfully integrated without extra masks and processing steps. SOI and its low parasitic junction capacitance enables this high level of performance and will expand the use of CMOS for millimeter-wave applications.     

A 2D non-parabolic six-moments model

In order to describe carrier transport in inversion layers we have developed a two-dimensional non-parabolic macroscopic transport model up to the sixth order. To model the transport parameters with as few simplifying assumptions as possible, we apply an extraction technique from Subband Monte Carlo simulations followed by an interpolation within these Monte Carlo tables through the whole inversion layer. Important effects like surface-roughness scattering as well as quantization are inherently considered in the Subband Monte Carlo data, which are used to model higher-order mobilities as well as the macroscopic relaxation times as a function of the effective field and the carrier temperature. The parameters are compared with the results obtained from models using bulk Monte Carlo data, where neither surface roughness nor quantization are considered. The models are applied to a UTB SOI-MOSFET and their predictions are discussed for different gate lengths.