Impact of barrier deposition process on electrical and reliability performance of Cu/CVD low k SiOCH metallization

Integration of Cu with low k dielectrics provided solution to reduce both resistance-capacitance time delay and parasitic capacitance of BEOL interconnections for 130 nm and beyond technology node. The motivation of this work is to study and improve electrical and reliability performance of two-level Cu/CVD low k SiOCH metallization from the results of diffusion barrier deposition schemes. Barrier deposition schemes are (a) high-density-plasma 250 Å Ta; (b) surface treatment of forming gas followed by high-density-plasma 250 Å Ta and (c) bi-layer of 100 Å Ta(N)/150 Å Ta. In this work, we demonstrated the superior and competency of high-density-plasma Ta deposition for Cu/CVD low k metallization and achieved excellent electrical and reliability results. Wafers fabricated with high-density-plasma Ta barrier scheme resulted in the best electrical yields, >90% for testing vehicles of dense via chains (via size=200 nm) and interspersed comb structures (width/space=200 nm/200 nm). Dielectric breakdown strength of the interspersed comb structures obtained at electric field of 0.3 MV/cm was ∼4 MV/cm.     

Approximate MLEs for the location and scale parameters of thehalf-logistic distribution with type-II right-censoring

For the half-logistic distribution the maximum likelihood method does not provide an explicit estimator for the scale parameter based on either complete or right-censored samples. The authors provide a simple method of deriving an explicit estimator by approximating the likelihood function. The bias and variance of this estimator are studied, and it is shown that this estimator is as efficient as the best linear unbiased estimator. An example to illustrate the method is presented     

A controlled multiaccess protocol for packet satellitecommunication

This protocol is fully distributed and no onboard processing is required for the satellite. A control parameter f is used to adaptively control the packet transmission rate such that maximum system capacity can be attained and the average delay is always minimized for a given throughput. The controlled protocol is found to give a smaller average delay than slotted ALOHA even when the throughput is as low as 0.05. On the other hand, under heavy traffic conditions, it can provide a throughput close to unity and an average delay not much more than one round-trip propagation delay. The system performance is also robust, in the sense that a 15% error in throughput estimation results in no more than a 3% increase of the overall average packet delay     

Carbazole and benzimidazole/oxadiazole hybrids as bipolar host materials for sky blue,green, and red PhOLEDs

Two novel bipolar host materials (CBzIm and COxaPh) comprising of a hole-transport (HT) carbazole core functionalized with electron-transport (ET) moieties (benzimidazole/oxadiazole) at C3 and C6 positions have been synthesized. Their thermal, photophysical, electrochemical properties, and carrier mobilities were characterized. Theoretical calculations revealed that the HOMO orbitals were generally delocalized over the hole- and electron-transport moieties for both CBzIm and COxaPh, whereas the LUMO orbitals distribution only involved one benzimidazole moiety in CBzIm instead of fully delocalization over the whole polar moieties for COxaPh, which is consistent with the observation of good hole mobilities for both hosts and better electron mobility for COxaPh over CBzIm. CBzIm with high E_T (2.76 eV) is suitable to serve as a blue phosphor host, where a sky blue phosphor (DFPPM)₂Irpic exhibiting superior properties than those of popular blue emitter FIrpic was used to give highly efficient phosphorescent OLEDs, achieving a maximum external quantum efficiency (η_ext) of 15.7%. The better π-delocalization of COxaPh led to a lower triplet energy (E_T = 2.65 eV), which can be used to accommodate green and red phosphors, providing excellent device performance with η_ext as high as 17.7% for green [(ppy)₂Ir(acac)] and 20.6% for red [Os(bpftz)₂(PPh₂Me)₂], respectively.     

Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors

This work studies the effects of number of gate finger on the DC subthreshold characteristics of multi-finger nanoscale MOS transistors. We found in not optimally-tempered nanoscale (gate length = 90 nm) MOS transistors that the significantly deteriorated subthreshold characteristics can be effectively improved by increasing the number of gate finger. This observation was explained with a modified subthreshold slope model based on voltage-doping transformation theory. Hence, the multi-finger structure does not only enhance the operation frequency, it also improves the subthreshold DC characteristics of the nanoscale MOS transistors.     

Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing

A number of commercially available multiple-quantum well (MQW) InGaN/GaN blue LEDs with wavelengths of about 460 nm and a power of 1 mW were stressed at temperatures ranging from 25 to 120 °C at several accelerated DC currents. Both the forward and reverse current voltage characteristics as well as the electroluminescent spectra of the LEDs were monitored. These effects also resulted in the pronounced degradation of light efficiency and device operation lifetime. We found that the degradation of photonic characteristics, correlated very well with the generation-recombination current which is governed by the defect density. The device degradation is much faster at high temperatures. At nominal operation current and at room temperature, the light intensity degradation reaches a saturation level before the light dyes out. These results shed new lights upon the design and lifetime specifications for the emerging commercial solid-state lighting devices.     

Decision-feedback MAP receiver for time-selective fading CDMAchannels

A decision-feedback maximum a posteriori (MAP) receiver is proposed for code-division multiple-access channels with time-selective fading. The receiver consists of a sequence-matched filter and a MAP demodulator. Output samples (more than one per symbol) from the matched filter are fed into the MAP demodulator. The MAP demodulator exploits the channel memory by delaying the decision and using a sequence of observations. This receiver also rejects multiple-access interference and estimates channel fading coefficients implicitly to give good demodulation decisions. Moreover, computer simulations are performed to evaluate the bit-error rate performance of the receiver under various channel conditions     

摩托罗拉8位HC08微控制器系列

摩托罗拉微控制器(MCU)具有编程语言简单、外围设备齐全、存储器模型用户友好、选择广及供应多、性能价格比高等优点,被设计者评为最容易使用的产品之一。在全球顶级的原始设备制造厂商(OEM)的无数嵌入式系统和用户最终产品中都可找到摩托罗拉的MCU,包括键盘、传呼机、电子游戏机、洗衣机、安全系统及汽车等。     

Ultrahigh‐Working‐Frequency Embedded Supercapacitors with 1T Phase MoSe2 Nanosheets for System‐in‐Package Application

Commercial aluminium electrolyte capacitors (AECs) are too large for integration in future highly integrated electronic systems. Supercapacitors, in comparison, possess a much higher capacitance per unit volume and can be embedded as passive capacitors to address such challenges in electronics scaling. However, the slow frequency response (<10¹ Hz) typical of supercapacitors is a major hurdle to their practical application. Here, it is demonstrated that 1T‐phase MoSe₂ nanosheets obtained by laser‐induced phase transformation can be used as an electrode material in embedded micro‐supercapacitors. The metallic nature of MoSe₂ nanosheet‐based electrodes provides excellent electron‐ and ion‐transport properties, which leads to an unprecedented high‐frequency response (up to 10⁴ Hz) and cycle stability (up to 10⁶ cycles) when integrated in supercapacitors, and their power density can be ten times higher than that of commercial AECs. Furthermore, fabrication processes of the present device are fully compatible with system‐in‐package device manufacturing to meet stringent specifications for the size of embedded components. The present research represents a critical step forward in in‐package and on‐chip applications of electrolytic capacitors.     

Dual-band planar inverted F antenna for GSM/DCS mobile phones

A compact dual-band planar inverted F antenna suitable for the application as a global system for mobile communication/digital communication system (GSM/DCS) dual-band mobile phone internal antenna is proposed and implemented. The proposed antenna has three resonant elements, two meandered metallic strips of slightly different lengths and one nearly-rectangular patch, which are printed on a supporting FR4 substrate and arranged in a compact configuration. These three resonant elements share a common shorting pin, and for the GSM (890-960 MHz) operation, the proposed antenna is operated with the two meandered strips both resonated as a quarter-wavelength structure, leading to a wide bandwidth formed by two resonant modes. For the upper band of the proposed antenna, three resonant modes are generated, two from the second higher-order modes of the two meandered strips and one from the nearly-rectangular patch, leading to a wide bandwidth covering the DCS band (1710-1880 MHz). The antenna design and experimental results are presented.