Effect of Trapping on Vortices in Plasma

Microscopic trapping of electrons is considered in one- and two-dimensional potential wells (shallow and deep) and its effect on vortex formation is investigated by deriving modified Hasegawa Mima (HM) equations. Inhomogenieties in the number density and magnetic field are taken into account. The modified HM equations are analysed by considering bounce frequencies of the trapped particles. Solitary vortices are obtained via Kortweg deVries (KdV) type of equations and both exact and Sagdeev potential solutions are obtained. In general it is observed that trapping produces stronger non-linearities and this leads to the modification of the original HM equation.     

Electron microscopy studies of the thermal stability of gold nanoparticle arrays

A series of monolayer protected gold nanoparticle colloidal solutions have been prepared with average sizes in the 2–15nm range. If a drop of such a colloidal suspension is deposited onto a Si₃N₄ substrate and the solvent allowed to evaporate, the particles have a tendency to self-assemble into monolayer rafts with varying degrees of structural order depending on the initial mono-dispersity of the particles. The thermal stability of these selfassembled gold nanoparticle rafts as a function of particle size, heating method, heating rate and ligand identity have been assessed in this study. In-situ TEM studies show that sub-8nm Au nanoparticles on Si₃N₄ have a tendency to coarsen upon slow heating, whereas those comprised of larger particles exhibit densification. Increasing the heating rate for the smaller particles promoted densification, forcing them to form highly interconnected string-like structures. Finally, rafts of sub-4nm alkanethiol protected Au nanoparticles are shown to sinter spontaneously under ambient conditions at room temperature on the timescale of several months. This unexpected effect may have important implications for the long term structural stability of any device constructed from sub-4nm gold nanoparticles.     

Magnetic and optical properties of amorphous NdFeCo thin films by pulsed laser deposition technique

Rare earth and transition metal doped (NdFeCo) thin films were fabricated on Si (100) substrate by pulsed laser deposition technique keeping the substrate at constant temperature of 300 °C. A KrF Excimer laser (248 nm, 20 ns) was used as an energy source for the deposition. Thin films were deposited without and under the influence of transverse magnetic field applied across the plume. The applied magnetic field was varied from 3 to 6 kOe. The deposited films were characterized by XRD, FESEM, VSM and SE (Spectroscopic Ellipsometry). The deposited films were amorphous in nature. All the films regardless of the applied magnetic field exhibit perpendicular magnetic anisotropy. The thickness of the thin films was found to increase monotonically from 166 to 266 nm with the increase in the applied external magnetic field. The saturation magnetization has a maximum value of 1682 emu/cc for the film deposited under 4.5 kOe magnetic field. The value of optical band gap energy for the same film is found to have a maximum value of 3.1 eV. The values of both the saturation magnetization and the band gap energy were decreased with the increase in the applied magnetic field.     

Dominant conduction mechanism and the effects of device temperature on electrical characteristics of Al/ZnPc/n-Si structures

Aluminum/Zinc Phthalocyanine/n-Si metal semiconductor contact with organic interfacial layer has been developed and characterized by Current-Voltage-Temperature (I-V-T) measurements for the study of its junction and charge transport properties. The junction parameters, such as diode ideality factor (n), barrier height (φ_b) and series resistance (R_S), of the device were found to shift with device temperature. The diode ideality factor was found to increase with the device temperature up to 323 K. However, a decreasing trend in the value of n was observed beyond this temperature. The barrier height and series resistance were found to increase and decrease, respectively with increasing device temperature. The peak of interface state energy distribution curves was shifted, in terms of Ess-Ev value, from 0.622 eV to 0.827 eV with 52 meV activation energy of the charge carriers. The data analysis implies that the Fermi level of the organic interfacial layer shifts as function of device temperature. In terms of dominant conduction mechanism, the I-V-T data analysis confirms the relationship log (IV⁴) ∝V^1/2 with the device temperature in the range of 313-343 K and the Poole-Frenkel type is found to be the dominant conduction mechanism for the hybrid device.     

The effects of welding parameters on the weldability of different materials using brazing alloy fillers

The objectives of the study were to investigate the microwelding conditions related to diffusion mechanism and elemental migration metallurgical and microscopy investigation, and to establish the fundamental corrosion mechanism on the properties of small welding and brazing areas that consist different materials. This study focuses on the weldability of Ti /Ni using microspot brazing technology by selection of brazing condition current, 2, 2.5, 3, 3.5 and 4 kA, voltage 2 V, load 60 N and welding time 25–50 ms, this welding condition effective on brazing temperature optimization this condition. Ti and Ni were selected as base metals. Four types of metal fillers were used as filler foils, sandwiched between Ti/Ni. First type of metal fillers was, 65Ni–35Cu foil, melting point 846 °C; the second was, 71Ag–28Cu–1Mg foil, melting point 775 °C; the third was, 80Ag–18Cu–2Ti foil, melting point 782 °C; and fourthly was, 73Ni–18Cr–9Si foil, melting point 917 °C. The electrode tip face chosen was circuitous in form. All brazed joint were made by microspot brazing method. Brazing was done under normal atmospheric condition.     

Predicting Shrinkage Stress Field in Concrete Slab on Elastic Subgrade

Concrete is a material that changes volumetrically in response to moisture and temperature variations. Frequently, these volumetric changes are prevented by restraint from the surrounding structure, resulting in the development of tensile stresses. This paper provides a method for computing the stress and displacement fields that develop in response to this restraint by considering the concrete slab as a plate resting on an elastic foundation. The interface between the slab and the foundation is capable of simulating all cases between complete perfect bond and perfect compression∕zero tension bond to permit debonding. In addition, stress relaxation is considered in the concrete to account for the reduction in stress due to creep∕relaxation-related phenomena. For this reason, the stress-strain relationship and equilibrium equations have been considered in the rate or differential form. The history-dependent equilibrium equations are obtained by integrating the differential equations with respect to time. An example is presented to illustrate the favorable correlation that exists between the predicted behavior of the plate model and finite-element modeling.     

Influence of Specimen Size∕Geometry on Shrinkage Cracking of Rings

This paper presents experimental evidence to show that a size∕geometry dependence is observed in the shrinkage cracking behavior of restrained concrete structures. A theoretical model is developed to explain this behavior. First, a solution is presented to compute the stress and displacement fields of an aging, linear, viscoelastic cylinder by assuming that a uniformly distributed shrinkage strain is perfectly restrained in the radial direction at the internal surface of the cylinder. Second, a fracture mechanics failure criterion is implemented to develop time and geometry-dependent tensile stress resistance (strength) curves. Third, this model is used to illustrate the role of specimen size∕geometry and material composition on the failure response. Finally, experimentally measured ages of cracking are compared with the theoretical modeling predictions.     

Model predictive control for the reactant concentration control of a reactor

The reactant concentration control of a reactor using Model Predictive Control (MPC) is presented in this paper. Two major difficulties in the control of reactant concentration are that the measurement of concentration is not available for the control point of view and it is not possible to control the concentration without considering the reactor temperature. Therefore, MIMO control techniques and state and parameter estimation are needed. One of the MIMO control techniques widely studied recently is MPC. The basic concept of MPC is that it computes a control trajectory for a whole horizon time minimising a cost function of a plant subject to a dynamic plant model and an end point constraint. However, only the initial value of controls is then applied. Feedback is incorporated by using the measurements/estimates to reconstruct the calculation for the next time step. Since MPC is a model based controller, it requires the measurement of the states of an appropriate process model. However, in most industrial processes, the state variables are not all measurable. Therefore, an extended Kalman filter (EKF), one of estimation techniques, is also utilised to estimate unknown/uncertain parameters of the system. Simulation results have demonstrated that without the reactor temperature constraint, the MPC with EKF can control the reactant concentration at a desired set point but the reactor temperator is raised over a maximum allowable value. On the other hand, when the maximun allowable value is added as a constraint, the MPC with EKF can control the reactant concentration at the desired set point with less drastic control action and within the reactor temperature constraint. This shows that the MPC with EKF is applicable to control the reactant concentration of chemical reactors.     

Logic Design Validation via Simulation and Automatic Test Pattern Generation

We investigate an automated design validation scheme for gate-level combinational and sequential circuits that borrows methods from simulation and test generation for physical faults, and verifies a circuit with respect to a modeled set of design errors. The error models used in prior research are examined and reduced to five types: gate substitution errors (GSEs), gate count errors (GCEs), input count errors (ICEs), wrong input errors (WIEs), and latch count errors (LCEs). Conditions are derived for a gate to be testable for GSEs, which lead to small, complete test sets for GSEs; near-minimal test sets are also derived for GCEs. We analyze undetectability in design errors and relate it to single stuck-line (SSL) redundancy. We show how to map all the foregoing error types into SSL faults, and describe an extensive set of experiments to evaluate the proposed method. These experiments demonstrate that high coverage of the modeled errors can be achieved with small test sets obtained with standard test generation and simulation tools for physical faults.