全文获取类型
收费全文 | 199700篇 |
免费 | 2307篇 |
国内免费 | 613篇 |
专业分类
电工技术 | 3468篇 |
综合类 | 149篇 |
化学工业 | 28963篇 |
金属工艺 | 8049篇 |
机械仪表 | 6069篇 |
建筑科学 | 4814篇 |
矿业工程 | 1303篇 |
能源动力 | 5127篇 |
轻工业 | 17122篇 |
水利工程 | 2299篇 |
石油天然气 | 4040篇 |
武器工业 | 8篇 |
无线电 | 23070篇 |
一般工业技术 | 40013篇 |
冶金工业 | 37235篇 |
原子能技术 | 5086篇 |
自动化技术 | 15805篇 |
出版年
2021年 | 1605篇 |
2019年 | 1568篇 |
2018年 | 2573篇 |
2017年 | 2645篇 |
2016年 | 2775篇 |
2015年 | 1795篇 |
2014年 | 3074篇 |
2013年 | 8940篇 |
2012年 | 5052篇 |
2011年 | 7023篇 |
2010年 | 5591篇 |
2009年 | 6351篇 |
2008年 | 6444篇 |
2007年 | 6512篇 |
2006年 | 5581篇 |
2005年 | 5231篇 |
2004年 | 5010篇 |
2003年 | 4888篇 |
2002年 | 4527篇 |
2001年 | 4657篇 |
2000年 | 4578篇 |
1999年 | 4726篇 |
1998年 | 11376篇 |
1997年 | 8122篇 |
1996年 | 6409篇 |
1995年 | 4673篇 |
1994年 | 4272篇 |
1993年 | 4073篇 |
1992年 | 3223篇 |
1991年 | 3076篇 |
1990年 | 2870篇 |
1989年 | 2951篇 |
1988年 | 2826篇 |
1987年 | 2398篇 |
1986年 | 2308篇 |
1985年 | 2715篇 |
1984年 | 2505篇 |
1983年 | 2345篇 |
1982年 | 2090篇 |
1981年 | 2203篇 |
1980年 | 2029篇 |
1979年 | 2124篇 |
1978年 | 2120篇 |
1977年 | 2366篇 |
1976年 | 3189篇 |
1975年 | 1833篇 |
1974年 | 1761篇 |
1973年 | 1772篇 |
1972年 | 1443篇 |
1971年 | 1339篇 |
排序方式: 共有10000条查询结果,搜索用时 46 毫秒
41.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
42.
43.
A. N. Gudkov V. M. Zhivun A. V. Zvonarev V. V. Kovalenko A. B. Koldobskii Yu. F. Koleganov S. V. Krivasheev V. B. Pavlovich N. S. Piven' E. V. Semenova 《Atomic Energy》1989,66(2):115-118
Translated from Atomnaya Énergiya, Vol. 66, No. 2, pp. 100–103, February, 1989. 相似文献
44.
45.
I. N. Polandov V. K. Novik O. K. Gulish B. P. Bogomolov V. B. Morozov 《Measurement Techniques》1989,32(9):888-890
Translated from Izmeritel'naya Tekhnika, No. 9, pp. 34–35, September, 1989. 相似文献
46.
Phase transformations in particles of ultrafine powders of graphite, hexagonal boron nitride, and quartz during rapid heating and cooling by passage through a laser beam were investigated. A continuous infrared laser with a wavelength of 10.6 μm was used as a heat source through which the powders were recycled several times. Methods of concentrating the product phases are described. Particles of diamond, carbides, cubic boron nitride, koesite and stishovite were obtained in the mixed products. 相似文献
47.
Summary The equilibrium water contents of linear poly(acrylic acid) sodium salts with different degrees of neutralisation were found to be dependent on temperature and relative humidity. An octahedral model for the primary hydration of poly(acrylic acid) sodium salts (HIRAOKA and YOKOYAMA 1980) was critically evaluated in the light of these findings and an anomaly in the water uptake versus neutralisation curve at approximately 33% neutralisation was explained by the counterion condensation theory. (MANNING 1979). 相似文献
48.
49.
V. L. Ozol' L. F. Kandyba N. T. Bychenkov L. A. Zbarskii B. E. Koropov 《Metallurgist》1989,33(8):156-156
Lenin Dnepropetrovsk Pipe Plant. Translated from Metallurg, No. 8, p. 39, August, 1989. 相似文献
50.