Revealing Electrical-Poling-Induced Polarization Potential in Hybrid Perovskite Photodetectors

Despite recent rapid advances in metal halide perovskites for use in optoelectronics, the fundamental understanding of the electrical-poling-induced ion migration, accounting for many unusual attributes and thus performance in perovskite-based devices, remain comparatively elusive. Herein, the electrical-poling-promoted polarization potential is reported for rendering hybrid organic–inorganic perovskite photodetectors with high photocurrent and fast response time, displaying a tenfold enhancement in the photocurrent and a twofold decrease in the response time after an external electric field poling. First, a robust meniscus-assisted solution-printing strategy is employed to facilitate the oriented perovskite crystals over a large area. Subsequently, the electrical poling invokes the ion migration within perovskite crystals, thus inducing a polarization potential, as substantiated by the surface potential change assessed by Kelvin probe force microscopy. Such electrical-poling-induced polarization potential is responsible for the markedly enhanced photocurrent and largely shortened response time. This work presents new insights into the electrical-poling-triggered ion migration and, in turn, polarization potential as well as into the implication of the latter for optoelectronic devices with greater performance. As such, the utilization of ion-migration-produced polarization potential may represent an important endeavor toward a wide range of high-performance perovskite-based photodetectors, solar cells, transistors, scintillators, etc.     

儿童用品TBT通报数据可视化预警研究

探索采用数据可视化技术分析儿童用品TBT通报数据,以可视化图形图像呈现通报热点并揭示趋势信息,提出对策与建议,助力为儿童用品产业升级、TBT预警数据分析和信息传播工作提供新思路,提高中小企业的国外市场准入机会。     

安家岭露天矿南帮边坡不稳定区域防治措施

安家岭露天矿通过开展边坡年度稳定性评价工作,对稳定性不足区域提出治理措施,并结合下1年度生产计划对采矿方案进行调整。安家岭露天矿采矿主要调整南帮逆断层影响区域,通过提前掏槽开采—快速内排压脚,使逆断层影响区域满足边坡安全;快速内排压脚后并对原运煤系统进行了调整,可以有效缩短运煤路线,在保证安全基础上取得可观的经济效益。     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

A Preamble Re-utilizing Access Scheme for Machine-Type Communications with Optimal Access Class Barring

Wireless Personal Communications - The existing long term evolution networks originally designed for human-to-human communications are hard to tackle numerous and bursty random access requests from...     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

内燃机活塞环表面处理技术

活塞环在内燃机中有着支撑、密闭、储油、导热的作用,内燃机活塞环制备材料应该具备优良的加工性能、耐高温、耐腐蚀、导热性好且具有良好的强韧性,较好的与气缸材料表面的磨合性能。球墨铸铁和专用钢材已经成为制备内燃机活塞环的基础材料,目前国内外采用多种表面处理技术比如:镀铬、氮化、PVD与CVD镀膜、喷钼、喷涂陶瓷层等表面处理工艺进行表面改性,提高内燃机活塞环的使用寿命和使用性能。需要不断研究和开发新的内燃机活塞环的表面处理技术来满足实际生产和应用中内燃机越来越高的要求。     

双馈风机低电压穿越的改进技术

为提高电压跌落条件下双馈风电机组的运行稳定性,介绍了crowbar与chopper共同配合作用的低电压穿越技术,并从提高crowbar阻值整定上限这一角度通过理论分析与仿真验证说明了crowbar与chopper配合作用的优势。提出低电压穿越过程中机侧变流器的无扰切换控制方法,通过仿真验证了这种方法可以大大减少crowbar投切次数与低穿过渡时间,且控制简单可行。     

500 kV 开关弹簧机构支架螺栓断裂的原因分析及处理

HPL500B2型弹簧机构支架(BA)螺栓断裂可能导致开关分合闸失败,对其原因进行分析,发现BA螺栓由于预紧固力矩过大,接近其扭断力矩,使得作用在BA螺栓上的力偏高,BA螺栓安全系数仅为12%,安全系数较低。列出BA螺栓更换步骤及注意事项,并详细介绍分闸、合闸弹簧调整步骤,为类似事件的处理提供参考。