Crystallographic shear planes in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

Atomic structures of crystallographic shear planes (CSPs) in nanocrystalline thin films of semiconductor SnO₂ were investigated by high-resolution electron microscopy. The films were prepared by electron beam evaporation in high vacuum (10^–6 torr) and followed by annealing in synthetic air at 700 °C for 1–2 H. CSPs with the displacement vector of [1/2 0 1/2] were observed in the planes parallel to (¯101), (110) and (¯3¯21). Most of the CPSs were found to terminate or interact with each other within SnO₂ crystallites. Partial dislocations exist at terminal places of CSPs or along intersecting lines of CSPs. CSP steps were also observed. Structural models of these defects have been proposed. Based on analysis of experimental data, it has been suggested that the Sn/O ratio at CSPs which are not parallel to their displacement vector, at cores of partial dislocations and at CSP steps, is higher than that of the perfect structure, that is, these defects are able to provide extra free electrons with the films.     

Preparation of Pb(Zr0.52Ti484848)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

In this paper we report the fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films on Si-on-Insulator (SOI) substrates with and without an electrode by pulsed excimer laser deposition combined with rapid thermal annealing. Based on the structural and interfacial characteristics analysis by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and automatic spreading resistance measurement (ASR), the film structure and orientation were revealed to be dependent on the annealing time and annealing temperature as well as deposition temperature. From RBS spectra and XTEM observation it is shown that the PZT thin films did not interact with the top silicon layers of SOI and that the composition of the film was similar to the target. The ASR measurements showed that the electrical properties of PZT/SOI as well as PZT/Pt/SOI were abrupt, and that the electrical properties of the SOI substrates were still good after the PZT growth.     

半导体激光器用铷D2线光电流谱稳频

本文报导了用铷原子７８００Ａ光电流谱来稳定半导体激光器的工作，在光电流谱线的中部发现了有利于稳频的凹陷，将半导体激光器频率锁定在凹陷的中央，估算的频率稳定度为１ＭＨｚ。     

建立数据库用微机进行钻井液设计

为了更好地指导现场钻井液施工,利用微机建立有关数据库和相应的设计软件,根据地质、工程的要求和井下情况进行钻井液设计,其特点是资料全面、程序运行可靠且操作简便,设计符合现场情况,施工顺利。在千12区块,用微机设计的109口井与人工设计的75口井相比,钻井速度提高,井下复杂情况减少,提高了经济效益。     

生物超微弱发光的光子计数成象方法

介绍了我们研制和设计的用于测量生物超微弱发光的光子计数成象系统，包括光子成象头，高帧频ＣＣＤ摄象机，图象采集系统和计算机，可以定量地探测出生物的发光强度分布 ，还能够显示出其发光的图象，确定发光的形状和位置，本系统的信噪比为１０：１，最小探测功率达１０＾－１６Ｗ，灵敏度高，动态范围大。     

无机添加剂的浓度及pH值对纺锤形α－Fe_2O_3晶貌的影响

本文以高浓度Ｆｅ３＋盐溶液为原料，采用沸腾回流的强迫水解法研究了无机添加剂浓度及反应液初始ｐＨ值对产物纺锤形α－Ｆｅ２Ｏ３晶貌的影响。结果表明，添加剂浓度和反应液初始ｐＨ值对纺锤形α－Ｆｅ２Ｏ３的轴比具有明显的影响，并且当添加剂浓度增加到一定值时，纺锤形α－Ｆｅ２Ｏ３出现解体。     

用于生产甲基丙烯酸的杂多酸催化剂的研究

以异丁烯为原料的两段直接氧化生产甲基丙烯酸最新工艺有许多优点。其技术关键在于研制出高效的甲基丙烯醛选择性氧化催化剂。本文报道P-Mo-As-Cu杂多化合物催化剂的组成、制备条件对催化剂活性的影响。经优化后获得高选择性、高活性的二段氧化催化剂，其甲基丙烯酸收率达60％以上。     

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本文通过对在用钻机井架的现场实际测试,建立数据库、测评模型,对实测的数据用计算机技术进行分析,提出了初始弯曲应力;数据正态分布检验——x～2检验;建立回归方程;在给定置信度下测评当前承载能力的技术概念。解决了在用钻机A型井架的安全性评估问题,是一种较为合理、可靠、科学的测评技术和方法。     

超细铁粉和氧化铁颗粒的研究

用透射电镜和图像分析仪等研究了超细铁粉和γ-Fe_2O_3粉末的结构、形貌、粒子的平均尺寸以及粒度分布。研究结果表明,多数超细铁粉粒子近似呈球形,并且,铁粉粒子由两相组成,粒子的核心部分是金屑a-Fe,表面的包裹层为氧化物层,它由Fe_3O_4和7-Fe_O_3的混合物组成。氧化层的平均厚度大约占整个粒子直径的20％左右。羰基铁粉粒子(含氧化层)的平均直径为16nm。直径在4～24nm范围的粒子数占总粒子数的91％,而7-Fe_2O_3粉末既有雪茄状粒子,也有小球状粒子。分析表明,球状粒子的平均直径为113nm,雪茄状粒子的平均直径(按<长 宽>/2计算)为148nm。由于超细铁粉粒子很细,且有磁性,制备电镜试样时分散比较困难。本文比较了几种分散方法后,使用了一种较好的分散方法——超声喷管分散法。     

GaN的MOVPE生长和m－i－n型蓝光LED的试制

利用自行研制的常压ＭＯＶＰＥ设备和全部国产ＭＯ源，采用低温生长缓冲层技术，在蓝宝石（α－Ａｌ２Ｏ３）衬底上获得了高质量的ＧａＮ外延层。未掺杂的ＧａＮ外延层的室温电子迁移率已达１１４ｃｍ２／Ｖ．ｓ，载流于浓度为２×１０１８。７７Ｋ光致发光谱近带边发射峰波长为３６５ｎｍ，其线宽为４ＤｍｅＶ。Ｘ射线双晶衍射回摆曲线的线宽为３６０ａｒｃｓｅｃ。用Ｚｎ掺杂生长了绝缘的ｉ－ＧａＮ层。在此基础上研制了ｍ－ｉ－ｎ型ＧａＮ的ＬＥＤ，并在室温正向偏压下发出波长为４５５ｎｍ的蓝光。