变频器调速装置节能浅析

1概述 近十多年来,随着电力电子技术、微电子技术及现代控制理论的发展,变频调速技术已经广泛地用于交流电动机的速度控制,其最主要的特点是具有高效率的驱动性能及良好的控制特性.它是一种高新技术电力节能装置,它通过改变（降低）电源工作频率,来降低动力设备（电机）的转速,减少设备的输出功率,达到输出功率与工作负荷的最佳匹配,实现节能目的,有效地提高了经济效益和产品质量.几乎可以说,有电动机的地方就有变频器,在一切需要进行速度控制的场合,变频器以其操作方便、体积小、控制性能高而获得广泛应用.     

基于扩展分形和CFAR特征融合的SAR图像目标识别

研究了多信息融合技术在SAR图像目标识别中的应用。将扩展分形特征(Extended Fractal)与双参数恒虚警特征(Double Parameter CFAR)形成的多信息进行融合处理。运用Dempster-Shafer证据理论，在决策层对SAR图像中的像素进行识别分类。实验结果表明通过融合对像素分类的准确性明显好于单特征的检测结果，减少了虚警概率，提高了系统的识别能力。     

高氧化态（Ⅱ─Ⅳ）三核金属簇合物构型的人工神经网络判别方法

本文运用一典型的人工神经网络模型─“反向传播”模型，对高氧化态（Ⅱ─Ⅳ）三核金属簇合物的构型分布进行了分析，得到了较好的分类、预报结果为化合物结构分析提供了新的工具。     

Magnetization and rotation of MTG HTSC ring in magnetic field

The magnetization of a melt-texture growth (MTG) HTSC ring has been studied. It is shown that the magnetic field inside the ring is larger than the external field under a certain range of external magnetic fields. We have also investigated the magnetic field dependence of the response of a detective coil near a rotating superconducting ring. The responses of the MTG sample are different for different cooling methods.     

Average consensus in networks of dynamic agents with switching topologies and multiple time-varying delays

In this paper, we discuss average consensus problem in undirected networks of dynamic agents with fixed and switching topologies as well as multiple time-varying communication delays. By employing a linear matrix inequality method, we prove that all the nodes in the network achieve average consensus asymptotically for appropriate communication delays if the network topology is connected. Particularly, several feasible linear matrix inequalities are established to determine the maximal allowable upper bound of time-varying communication delays. Numerical examples are given to demonstrate the effectiveness and the sharpness of the theoretical results.     

判断油气藏非均质性的新方法

非均质性是油气藏的基本特性,也是影响油气面采收率的重要因素.它是反映油气藏的渗透率、孔隙度、有效厚度及其连通性的综合特征参数.不同油气藏在投入开发后,其产量随时间变化的分布曲线与油气藏自身的非质均性有密切关系.利用伽马分布描述油气藏产量随时间的变化,研制了典型曲线的理论图版,通过拟会求解,可判断油气藏的非均质程度.     

液相添加剂对PTCR陶瓷电性能的影响

液相添加剂ＡＳＴ（Ａｌ２Ｏ３＋ＳｉＯ２＋ＴｉＯ２）对ＢａＴｉＯ３陶瓷材料电性能的影响很大，随着Ａｌ２Ｏ３含量的增加，材料的电性能降低；ＳｉＯ２、ＴｉＯ２的物理特性对材料电性能影响较大；过量ＴｉＯ２对材料ＰＴＣ效应有重要影响，适当过量ＴｉＯ２含量，可得到性能优良的ＰＴＣＲ陶瓷。     

Evaluation of Qbd for electrons tunneling fromthe Si/SiO2 interface compared to electron tunneling from thepoly-Si/SiO2 interface

Electrical time-to-breakdown (TTB) measurements have shown the charge to breakdown Q_bd of gate oxide capacitors fabricated on n-type well (n-well) substrates always to be higher than that of capacitors on p-type well (p-well) substrates on the same wafer when both are biased into accumulation under normal test conditions. Here the authors correlate the higher n-well Q_bd to smooth capacitor oxide/substrate interfaces and minimized grain boundary cusps at the poly-Si gate/oxide interfaces, confirming that Fowler-Nordheim tunneling is the dominant current conduction mechanisms through the oxide. They correlate higher Q_bd to higher barrier height for a given substrate type and observe that the slope of the barrier height versus temperature plot is lower for both p-well and n-well cases with electrons tunneling from the silicon substrate. This is attributed to surface roughness at the poly-Si gate/SiO₂ interface. A poly-Si gate deposition and annealing process with clean, smooth oxide/substrate interfaces will improve the p-well breakdown characteristics and allow higher Q_bd to be achieved