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991.
The fast Fourier transform (FFT) algorithm has been used in a variety of applications in signal and image processing. In this article, a simple procedure for designing finite-extent impulse response (FIR) discrete-time filters using the FFT algorithm is described. The zero-phase (or linear phase) FIR filter design problem is formulated to alternately satisfy the frequency domain constraints on the magnitude response bounds and time domain constraints on the impulse response support. The design scheme is iterative in which each iteration requires two FFT computations. The resultant filter is an equiripple approximation to the desired frequency response. The main advantage of the FFT-based design method is its implementational simplicity and versatility. Furthermore, the way the algorithm works is intuitive and any additional constraint can be incorporated in the iterations, as long as the convexity property of the overall operations is preserved. In one-dimensional cases, the most widely used equiripple FIR filter design algorithm is the Parks-McClellan algorithm (1972). This algorithm is based on linear programming, and it is computationally efficient. However, it cannot be generalized to higher dimensions. Extension of our design method to higher dimensions is straightforward. In this case two multidimensional FFT computations are needed in each iteration  相似文献   
992.
Owing to limitations of frequency resources, advanced sensor array processing techniques are needed in a growing wireless wideband communications market. A beamspace wideband processing technique is proposed and is shown to reduce both signal to interference and SNR ratios. Performances for different array processing algorithms, flexibility and complexity cost are thus improved  相似文献   
993.
A thin PbTiO3-n-p+ silicon diode has been developed, in which the conductivity increases with the infrared light power. The infrared-sensitive part consists of PbTiO3 ferroelectric thin film deposited by RF sputtering. The diode has smaller heat capacity compared with other conventional infrared sensors because the tunneling current is allowed through the PbTiO3 layer so that the PbTiO3 film thickness can be thinned. Numerical analysis of the operational mechanism, such as the effects of infrared light power on the depletion layer width, n-p+ junction voltage, surface depletion region voltage drop, and voltage drop across the thin PbTiO3 film, are reported in detail. Furthermore, some experimental measurements, such as the effects of infrared light power on current-voltage (I-V) curves and the dielectric constant of PbTiO3 film, are compared with the theoretical analysis  相似文献   
994.
This paper describes the high performance of T-shaped-gate CMOS devices with effective channel lengths in the sub-0.1-μm region. These devices were fabricated by using selective W growth, which allows low-resistance gates smaller than 0.1 μm to be made without requiring fine lithography alignment. We used counter-doping to scale down the threshold voltage while still maintaining acceptable short-channel effects. This approach allowed us to make ring oscillators with a gate-delay time as short as 21 ps at 2 V with a gate length of 0.15 μm. Furthermore, we experimentally show that the high circuit speed of a sub-0.1-μm gate length CMOS device is mainly due to the PMOS device performance, especially in terms of its drivability  相似文献   
995.
The aperture-coupled cylindrical dielectric resonator (DR) antenna loaded by a low-profile DR disk of very high permittivity is studied experimentally. By using the low-profile parasitic DR disk the antenna bandwidth can be increased from 8% bandwidth to 25%. The characteristics of the new configuration are measured and discussed  相似文献   
996.
Jin  I.S. Whang  K.C. Cho  K. Ahn  J.Y. Oh  H.S. 《Electronics letters》1997,33(20):1668-1669
An algorithm for mapping between information bits and channel symbols in multiple trellis-coded modulation (MTCM) codes with M-PSK signal sets is proposed. The core of the algorithm assigns information bits with a Hamming distance in proportion to the sum of the Euclidean distance to each M-PSK symbol. The analytical results show that the additional gains from applying the algorithm can be achieved with little or no loss  相似文献   
997.
This study reports an optimum design for a two-phase charge-coupled device (CCD) and limitations on its driving voltage reduction. The two-phase CCD to be used as a horizontal-CCD (H-CCD) in a CCD image sensor requires low-voltage and high-speed operation. Reducing the driving voltage, however, may induce potential pockets in the channel under the inter-electrode gaps which results in a fatal decrease in charge-transfer efficiency. In this case it is necessary to optimize the CCD design to be free of pocket generation. For this requirement, we conducted two-dimensional (2-D) device simulations for the two-phase CCD, whose potential barriers are formed by boron ion-implantation. Our simulations indicated that the edge position of the potential barrier region and the dose of boron-ion implantation would be important parameters for controlling the size of potential pockets. At an optimum edge position and a boron dose, the minimum driving voltage appears to be reducible to 1.1 V. Characteristics of potential pockets and methods of their suppression are also discussed  相似文献   
998.
A simulation system has been developed to automatically analyze basic electrical characteristics of a charge-coupled device (CCD) image sensor from a process simulation result. This system shortened the simulation period to approximately 1/10 by getting rid of complicated repetitious procedures. A high-performance new cell technology has been developed successfully with improving impurity distribution in shorter development time by using this system. This technology has been realized as a CCD cell pixel with CCD charge quantity of 1.8 times, effective transfer efficiency of over 99%, no image lag for driving read-out pulse voltage in comparison with conventional technology. A 1/4-in 330 K square pixel progressive-scan CCD was fabricated with this technology. These results are described to demonstrate the effectiveness of the automatic simulation system  相似文献   
999.
Slot antennas on photonic band gap crystals   总被引:1,自引:0,他引:1  
The radiation patterns of a slot antenna placed on a photonic band gap crystal have been measured. We used a layer-by-layer photonic band gap crystal having a three-dimensional stop band between 12 and 15 GHz. The slot antenna radiation depends sensitively on the relative position and orientation of the slot in the surface unit cell of the photonic crystal. We have found configurations of the slot antenna with an increase of radiated power by 2-3 dB. The photonic band gap crystal can considerably improve the performance of a simple slot antenna  相似文献   
1000.
Aiming at future multimedia land mobile-satellite services (LMSS) consisting of a large number of nongeostationary Earth-orbit satellites, we present an LMSS propagation channel model for assessing the effect of a satellite diversity scheme so that high service availability and high signal quality are assured. We classify general fading environments for LMSS into three states. By taking the occurrence probability of each state into account, a new fading channel model is developed. The validity of the model is identified by comparing its predicted values in terms of the cumulative distribution function (CDF) with measured data available so far. Then, based on this model, we calculate the satellite diversity effect assuming that the area is illuminated simultaneously by at least two satellites moving in low Earth orbits (LEO) over urban and suburban environments. In addition, state transition characteristics based on a Markov model are presented  相似文献   
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