Formation of C49-TiSi2 in flash memories: a nucleation controlled phenomenon?

The formation of Ti silicides has been examined in flash memories with 0.25 μm linewidth by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It has been observed that, after the first rapid thermal process and the selective metal etch, there is no silicide on the source and on a majority of drain contacts while C49-TiSi₂ is found on the gate. A pre-amorphisation implant increases drastically the formation of C49-TiSi₂ in the drain zone while modifications of annealing conditions have little impact. These results indicate that the formation of C49-TiSi₂ is most likely controlled by nucleation and that this nucleation is sensitive to both the width and the length of the reaction zone. The formation of a Ti rich silicide may play an important role in this nucleation by decreasing the driving force for the formation of C49-TiSi₂. Curiously enough, the formation of C49-TiSi₂ appears thus as a major concern for the salicide process in flash memories.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Power combining characteristics of backed-off traveling wave tubes for communications applications

Traveling wave tubes (TWTs) used in multi-tone and digital communications applications are typically operated backed off from saturation in order to improve the amplifier linearity. This reduces the bit error rate (BER), decreases intermodulation distortion and lowers adjacent channel power; all at the expense of reducing the average output power. For emerging telecommunications applications, the average power requirement is increasing to provide higher bit rates and lower BER, and often exceeds the power obtainable from backed-off space or telecommunications TWTs. One solution is to power combine TWTs that are operated 3 to 10 dB backed off from saturation. Efficient power combining requires that the phase and gain of the signal from each TWT be closely matched. To understand the variation in these parameters across a build-set of tubes, the phase and gain versus drive of 35 Boeing S-band 5525H TWTs were measured. The standard deviation in the phase about the mean phase shift measured at saturation was found to be 2.6/spl deg/, with a related standard deviation of the gain compression at saturation of 0.22 dB. These levels result in small power combining losses and small errors in phased-array fed multi-beam antennas in broadband multi-tone applications.     

Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method

Current distribution in vertical double-diffused MOS (DMOS) transistors of a Smart Power Technology are investigated under high current, short duration operation conditions by means of a backside laser interferometric thermal mapping technique. DMOS devices of different areas are studied under pulsed gate forward operation mode and under electrostatic discharge (ESD)-like stress with floating and grounded gate. The internal behavior of the devices observed by thermal mapping under these stress conditions is correlated with the electrical characteristics.     

Distinctiveness and Correlation in Conceptual Structure: Behavioral and Computational Studies.

Patients with category-specific deficits have motivated a range of hypotheses about the structure of the conceptual system. One class of models claims that apparent category dissociations emerge from the internal structure of concepts rather than fractionation of the system into separate substores. This account claims that distinctive properties of concepts in the living domain are vulnerable because of their weak correlation with other features. Given the assumption that mutual activation among correlated properties produces faster activation in the normal system, the authors predicted a disadvantage for the distinctive features of living things for unimpaired adults. Results of a speeded feature verification study supported this prediction, as did a computational simulation in which networks mapped from orthography to semantics. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Proton-exchanged LiNbO/sub 3/ optical waveguides using stearic acid

Proton-exchanged optical waveguides have been fabricated in z-cut LiNbO/sub 3/ using a new proton source: stearic acid. These waveguides were characterized optically and were found to exhibit a step index profile with Delta n=0.118 measured at 0.633 mu m. The propagation losses were typically around 1.5 dB/cm, and the diffusion constant and the activation energy for the proton-exchange process were measured to be 5*10/sup 6/ mu m/sup 2//h and 69 kJ/mol, respectively.<>     

Circuit techniques for large CSEA SRAMs

The CMOS-storage emitter-access (CSEA) memory cell offers faster access than the MOS cells used in conventional BiCMOS SRAMs but using it in large memory arrays poses several problems. Novel BiCMOS circuit approaches to address the problems of decoding power, electronic noise, level translation, and write disturbance are described. Results on a 64-kb CSEA SRAM using these techniques are reported. The device, fabricated in an 0.8-μm BiCMOS technology, achieves read access and write pulse time of less than 4 ns while dissipating 1.7 W at a case temperature of 70°C     

RbCl:Li color center laser with laser diode pumping

CW operation of a RbCl:Li-F_A(II) laser has been obtained under pumping by a red laser diode. Pump power at threshold is 90 mW. Single frequency operation of the color center laser has been achieved. The intensity noise generated by two pump sources (laser diode and Kr-ion laser) is compared     

Creep in polyethylene and hydroxyapatite reinforced polyethylene composites

Isochronous stress-strain relationships and long term creep performance for unfilled and hydroxyapatite filled polyethylene composites have been studied. The tests were carried out in a buffered (pH=7.5) Ringer's solution at 37°C. It was observed that the inclusion of hydroxyapatite does not remove the non-linear viscoelasticity of polyethylene. The creep resistance is found to increase with increase in volume fraction of hydroxyapatite. The creep failure of composites at long times can occur due to debonding of the interface.     

Influence of the Temperature of a Body on Its Weight

The physical preconditions are considered for the temperature of a body to influence the force of gravity experienced by it. The results are given of experiments on weighing metal rods heated by ultrasound which confirm a dependence of the weight of the rods on their temperature.