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1.
Shunkang Liu 《Journal of Infrared, Millimeter and Terahertz Waves》2003,24(5):629-638
The pill-box and block RF windows for millimeter wave (MMW) tubes are presented. The pill-box window is suitable for broadband MMW tubes. And the block window can be used for high power tubes in short MMW. The equivalent circuits for two windows are given. To reach better match characteristics in wider operating bandwidth, the optimum design methods for pill-box and block window in MMW tubes are described in this paper. The testing results show that the theoretic computation is fast and useful accuracy. The design methods possess references value to designer for MMW tubes. 相似文献
2.
Xue‐Yong Liu Xiao‐Bin Ding Zhao‐Hui Zheng Yu‐Xing Peng Albert S
C Chan C
W Yip Xin‐Ping Long 《Polymer International》2003,52(2):235-240
Amphiphilic magnetic microspheres ranging in diameter from 5 to 100 µm were prepared by dispersion copolymerization of styrene and poly(ethylene oxide) vinylbenzyl (PEO‐VB) macromonomer (MPEO) in the presence of Fe3O4 magnetic fluid. The effects of various polymerization parameters on the average particle size were systematically investigated. The average particle size was found to increase with increasing styrene concentration and initiator concentration. It also increased with decreasing stabilizer concentration and molecular weight of MPEO. The content of the hydroxyl groups localized in the microspheres ranged from 0.01 to 0.2 mmol g?1. © 2003 Society of Chemical Industry 相似文献
3.
4.
Data mining extracts implicit, previously unknown, and potentially useful information from databases. Many approaches have been proposed to extract information, and one of the most important ones is finding association rules. Although a large amount of research has been devoted to this subject, none of it finds association rules from directed acyclic graph (DAG) data. Without such a mining method, the hidden knowledge, if any, cannot be discovered from the databases storing DAG data such as family genealogy profiles, product structures, XML documents, task precedence relations, and course structures. In this article, we define a new kind of association rule in DAG databases called the predecessor–successor rule, where a node x is a predecessor of another node y if we can find a path in DAG where x appears before y. The predecessor–successor rules enable us to observe how the characteristics of the predecessors influence the successors. An approach containing four stages is proposed to discover the predecessor–successor rules. © 2006 Wiley Periodicals, Inc. Int J Int Syst 21: 621–637, 2006. 相似文献
5.
Chun-Tsen Lu Kun-Wei Lin Huey-Ing Chen Hung-Ming Chuang Chun-Yuan Chen Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(6):390-392
A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated. 相似文献
6.
丙烯腈中有机杂质丙烯醛、丙酮、乙腈是其重要指标,现在丙烯腈的国标测试方法用填充柱气相色谱法分析丙烯腈中有机杂质丙烯醛、丙酮、乙腈的含量,此法分析时间长,灵敏度低。为了及时准确提供分析数据,用毛细管气相色谱法测定丙烯腈中有机杂质的含量。 相似文献
7.
Chun-Yuan Chen Shiou-Ying Cheng Wen-Hui Chiou Hung-Ming Chuang Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(3):126-128
A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications. 相似文献
8.
Polyaryloxydiphenylsilanes were prepared from phosphorus‐containing diols and diphenydichlorolsilane through solution polymerization. With a stoichiometric imbalance in feed monomers, the resulting polymers exhibited moderate melting points and good processing properties. The polymers prepared showed initial decomposition temperatures above 340 °C, excellent thermal stability, high char yields at 850 °C and very high limited oxygen index values of 56–59. The polymers' char yields and their (P + Si) contents showed linear relationships. © 2003 Society of Chemical Industry 相似文献
9.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
10.