Modified thermoelectric figure of merit estimated from enhanced mobility of [100] oriented beta-FeSi<Subscript>2</Subscript> thin film

The modification of thermoelectric figure of merit was estimated from enhanced mobility of [100] oriented beta-FeSi₂ film. beta-FeSi₂ on Si(001) substrate was prepared by molecular beam epitaxy method using an Fe source. The crystallographic orientation of beta-FeSi₂ film on Si(001) substrate was characterized by using X-ray diffraction. Using scanning electron microscopy, surface morphology and film thickness of samples were observed and estimated, respectively. The mobility of beta-FeS₂ film on Si(001) substrate were also characterized by Hall measurement at room temperature. A part of the enhancement of figure of merit was evaluated as the functions of mobility and crystallographic orientation of samples.     

A simple method for measuring the relative permittivity of printedcircuit board materials

This paper presents a simple method to measure the relative permittivity of glass-epoxy printed circuit boards (PCBs). In this method, the relative permittivity as a function of frequency is measured using an actual PCB. In order to estimate the relative permittivity, the reflection coefficient is measured with a network analyzer. The relative permittivity is calculated by observing the frequencies of the resonant cavity modes. We show that the relative permittivity of an FR-4 sample decreases from 4.3 to 4.2 at frequencies from 300 MHz to 2 GHz     

Chemical bath deposition of Cds buffer layer for GIGS solar cells

We investigated the chemical bath deposition of US thin flims on the Cu(In,Ga)Se₂ (GIGS) absorber layers and glasses. The process of the chemical bath deposition of US layer affected the performance of the CIGS solar cells. The CdS layers were deposited on the CIGS film from CdI₂, thiourea (NH₂CSNHn₂) and ammonia solutions. The influence of pH on the chemical bath deposition process was studied. The surfaces of the US films were observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The compositions of the obtained CdS layers were analyzed by Auger electron spectroscopy (AES). The performance of the CIGS solar cells was discussed on the basis of the characteristics of the chemical bath deposited layer. We have successfully fabricated a high-efficiency CIGS solar cell with an efficiency of 17% using a US layer with stoichiometric composition.     

High-speed InGaAlAs-InAlAs MQW directional coupler waveguide switchmodules integrated with a spotsize converter having a lateral taper,thin-film core, and ridge

Fully packaged 2×2 and 4×4 semiconductor optical switch modules are successfully developed by integrating spotsize converters (SSCs) consisting of lateral tapers, thin-film cores, and ridges in InGaAlAs-InAlAs multiple quantum-well (MQW) directional coupler waveguide switches in the 1.55-μm wavelength region. Good reproducibility is obtained for the perfect coupling length of the directional coupler by appropriately designing the ridge width and gap of strip-loaded optical waveguides and by making use of the Cl₂ reactive-ion-beam-etching and successive wet-etching. Since the switching time is sufficiently short (<70 ps, which is limited by the driver speed) for the 4×4 switch module, no bits are lost during a 10-Gb/s switching experiment at a wavelength of 1.55 μm     

An AlxGa1-xSb avalanche photodiode with again bandwidth product of 90 GHz

An Al_xGa_1-xSb avalanche photodiode (APD) with an Al composition of 0.05 has been fabricated and tested. The measured gain-bandwidth (GB) product of the highly doped diode is 90 GHz. Such a large GB product has never been previously achieved by any APD materials sensitive in the long-wavelength region. This suggests the advantage of the Al_xGa_1-xSb material system for very high-speed operation     

Optimum design of δ-doped InGaAs avalanche photodiode byusing quasi-ionization rates

An avalanche photodiode (APD) designed by using quasi-ionization rates in InP and InGaAs is described. The structure has a δ-doped layer in an InP window layer. The heterointerface electric field is investigated and determined to prevent the tunneling current and carrier multiplication in InGaAs. The gain bandwidth (GB) product of the δ-doped APD is analyzed by R.B. Emmons's (1967) p-i-n electric field method. The highest GB product is 160 GHz     

Convergence acceleration and accuracy improvement in power bus impedance calculation with a fast algorithm using cavity modes

Based on the cavity-mode model, we have developed a fast algorithm for calculating power bus impedance in multilayer printed circuit boards. The fast algorithm is based on a closed-form expression for the impedance Z matrix of a rectangular power bus structure; this expression was obtained by reducing the original double infinite series into a single infinite series under an approximation. The convergence of the single series is further accelerated analytically. The accelerated single summation enables much faster computation, since use of only a few terms is enough to obtain good accuracy. In addition, we propose two ways to compensate for the error due to the approximation involved in the process of reducing the double series to the single series, and have demonstrated that these two techniques are almost equivalent.     

High-speed DCFL circuits with very shallow junction GaAs JFETs

High-speed DCFL (direct-coupled FET logic) circuits implemented with advanced GaAs enhancement-mode J-FETs are discussed. A divide-by-four static frequency divider operates at up to 6 GHz with a power consumption of 20 mW/flip-flop. A high channel concentration of more than 1×10¹⁸ cm^-3 together with a very shallow junction depth of less than 30 nm for the p⁺-gate results in a transconductance as high as 340 mS/mm at a gate length of 0.8 μm. Open-tube diffusion of Zn using diethylzinc and arsine makes it possible to control a very shallow p⁺-layer less than 10 nm thick. The propagation delay time, as measured with a ring oscillator, was 22 ps/gate with a power consumption of 0.42 mW/gate     

Highly unsaturated fatty acid might act as an antioxidant in emulsion system oxidized by azo compound

Now it is recognized that DHA is oxidatively stable fatty acid compared with linoleic acid (LA) in emulsified system, although DHA is oxidatively unstable in a bulk system. In fact, an emulsified mixture of DHA and LA behaves as in a bulk system, namely the oxidative stability of DHA becomes lower than that of LA. Therefore, in this study, tridocosahexaenoate (DDD) and glycerol trilinoleate (LLL) were separately emulsified using TritonX-100 as an emulsifier and DDD emulsion was mixed with the oxidizing LLL emulsion using a water-soluble radical initiator, 2,2'-azobis(2-aminopropane) dihydrochloride. As a result, DHA suppressed the oxidation of LA, while DHA was not significantly oxidized. This suppression ability was examined using glycerol trieicosapentaenoate, glycerol trilinolenate, or glycerol trioleate instead of DDD and it was found that this activity was increased with the increasing number of double bonds in the structure. Furthermore, the same type of experiment was carried out using a lipid-soluble radical initiator, 2,2'-azobisisobutyronitrile and the similar result was obtained. These results indicated that a highly polyunsaturated fatty acid might act as an antioxidant in an emulsion system oxidized by an azo compound.     

Estrogen Stimulates Proliferation and Differentiation of Neural Stem/Progenitor Cells through Different Signal Transduction Pathways

Our previous study indicated that both 17β-estradiol (E2), known to be an endogenous estrogen, and bisphenol A (BPA), known to be a xenoestrogen, could positively influence the proliferation or differentiation of neural stem/progenitor cells (NS/PCs). The aim of the present study was to identify the signal transduction pathways for estrogenic activities promoting proliferation and differentiation of NS/PCs via well known nuclear estrogen receptors (ERs) or putative membrane-associated ERs. NS/PCs were cultured from the telencephalon of 15-day-old rat embryos. In order to confirm the involvement of nuclear ERs for estrogenic activities, their specific antagonist, ICI-182,780, was used. The presence of putative membrane-associated ER was functionally examined as to whether E2 can activate rapid intracellular signaling mechanism. In order to confirm the involvement of membrane-associated ERs for estrogenic activities, a cell-impermeable E2, bovine serum albumin-conjugated E2 (E2-BSA) was used. We showed that E2 could rapidly activate extracellular signal-regulated kinases 1/2 (ERK 1/2), which was not inhibited by ICI-182,780. ICI-182,780 abrogated the stimulatory effect of these estrogens (E2 and BPA) on the proliferation of NS/PCs, but not their effect on the differentiation of the NS/PCs into oligodendroglia. Furthermore, E2-BSA mimicked the activity of differentiation from NS/PCs into oligodendroglia, but not the activity of proliferation. Our study suggests that (1) the estrogen induced proliferation of NS/PCs is mediated via nuclear ERs; (2) the oligodendroglial generation from NS/PCs is likely to be stimulated via putative membrane-associated ERs.