四川省水电站大坝安全管理综述

１９８９至１９９５年，四川省电力工业局大坝安全监控中心先后对省局所属的８座电站大坝和委托代管的５座电站大坝进行了首轮定检。经定检评定的１２座闸，坝均为正常闸，坝；虽有某些缺陷和隐是否 影响整体安全。在定检的基础上，省局又将大坝安全监控纳入“十大技术监控”之中，使安全定检工作制度好，规范化。     

非反应性共聚物增容剂的作用

简述了共聚物增容剂在聚合物熔融共混物中的作用方面的研究进展。阐述了A-B、A-C和D-E型非反应性共聚物增容剂。重点介绍了增容剂的分子量、用量对聚合物共混物的界面张力、相畴尺寸和聚结的影响。     

地基设计基本原则的探讨

地基设计是整个建（构）筑物设计中的重要组成部分，它关系到建（构）筑物的安全及其功能能否正常发挥。本文着重分析探讨了在地基设计中应遵循的原则及注意事项。以保证建（构）筑物的安全和正常使用，充分发挥地基的作用。     

纳米复合材料——石墨层间化合物(GICs)的结构分析

本文调研了纳米复合材料——GICs(石墨层间化合物)结构的主要研究方法、原理及模型,并介绍了在GICs结构研究中用到的现代分析手段。     

Simple ASK transmitter using a 790 nm self-pulsating laser diodefor local area networks

A simple amplitude shift keying (ASK) optical link is demonstrated by using a low-cost self-pulsating laser diode and an envelope detector for a low-cost broadband local area network. A link sensitivity of -22 dBm was achieved at 200 Mbit/s. Because the self-pulsation frequency can be tuned by the bias current, frequency division multiplexing can be simply implemented for multiuser applications     

InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.     

Correlation study on infrared thermography and nerve root signs in lumbar intervertebral disk herniation patient: a short report

OBJECTIVE: To determine whether infrared skin thermography is an objective measurement reflecting the seriousness of nerve root irritation in lumbar disk herniation patients. DESIGN: Quantified nerve root signs by physical examination were collected from the patients along with the infrared skin temperature measurement on the lumbosacral region and posterior part of thighs. A correlation study was applied to observe the relation between the nerve root signs and the skin temperature before a successful conservative treatment (mainly spine manipulation), and between the alteration of nerve root signs and that of skin temperature after the treatment. SETTING: Hospitalized care. PATIENTS: Twenty-seven hospitalized samples with computed tomography or magnetic resonance approval were consecutively selected during the latter half of 1990. MAIN OUTCOME MEASURE: Changes in nerve root signs. RESULTS: The temperature difference between a troubled thigh and healthy one is significantly correlated to the score of the nerve root signs before the treatment; and the reduction of temperature difference between two thighs is also significantly correlated with decreasing score of nerve root signs after the treatment. The correlation between the temperature difference on the left and right sides of the lumbosacral region and the nerve root signs before the treatment is insignificant; and the variation of the temperature difference of the same region after the treatment is not correlated with the decreasing score of the nerve root signs. CONCLUSION: Infrared skin thermography of lower extremities might be an objective sign in signaling the soothing process of the nerve root irritation in lumbar disk herniation patients, which may help a doctor in checking the responses of the patient to treatment.     

Analysis of culture fluorescence by a fiber-optic sensor inNicotiana tabacum plant cell culture

The on-line sensing of viable cell weight in plant cell culture process is applied to analysis and control of process. The fiber-optic fluorescence sensor was constructed to measure the NADH-dependent fluorescence inNicotiana tabacum plant cell culture and the analysis of fluorescence signal was done to be correlated with the viable cell weight. The structured kinetic model for cell growth was proposed to estimate the theoretical viable cell weight. The dimensional analysis was proposed for the interpretation of fluorescence signal, in which the path length, the inner filter effect and the hydrodynamic conditions were considered as the key factors on fluorescence signal. The dimensional analysis and empirical correlation of fluorescence signal to viable cell weight was applied to the interpretation of the detected fluorescence signal during cultivation. The proposed interpretation of fluorescence signal using dimensional analysis was well correlated with the viable cell weight estimated by the structured kinetic model as well as by empirical correlation.     

关于生物系统超微弱发光的实验研究

生物系统存在超微弱光子辐射现象。通过一系列实验研究,我们认为,这种光子辐射既有低水平化学发光的性质,又有受激辐射的性质,是受激的低水平化学发光。