A block transportation scheduling system considering a minimisation of travel distance without loading of and interference between multiple transporters

Material transportation scheduling problems concerning scheduling optimisation have been extensively investigated by researchers in such fields as industrial engineering and management science. Various algorithms have been proposed to solve such problems. However, the majority of these algorithms cannot be applied to a block transportation problem when a shipyard that uses a transporter, a large vehicle employed for moving weight, is considered. In this study, a hybrid optimisation algorithm is proposed for solving a block transportation problem when multiple transporters are used. With regards to the transporters, a minimisation of the travel distance without loading of and interference between the transporters is considered. A block transportation scheduling system is then developed based on the proposed algorithm. The developed system is applied to an actual block transportation scheduling problem of a shipyard. From the attained results, we demonstrate that the proposed algorithm has the ability to effectively solve the block transportation scheduling problems of a shipyard.     

1.5 mu m band travelling-wave semiconductor optical amplifiers with window facet structure

1.5 mu m band travelling-wave semiconductor optical amplifiers (TWAs), characterised by their window facet structure and symmetrised active waveguide, have been developed. 1.5 dB spectral gain ripple and 1.3 dB TE-TM mode gain difference at 22 dB signal gain were achieved simultaneously. An average facet reflectivity as low as 0.06% was estimated.<>     

Synthesis of Crystalline Black Phosphorus Thin Film on Sapphire

Black phosphorus (BP) has recently attracted significant attention due to its exceptional physical properties. Currently, high‐quality few‐layer and thin‐film BP are produced primarily by mechanical exfoliation, limiting their potential in future applications. Here, the synthesis of highly crystalline thin‐film BP on 5 mm sapphire substrates by conversion from red to black phosphorus at 700 °C and 1.5 GPa is demonstrated. The synthesized ≈50 nm thick BP thin films are polycrystalline with a crystal domain size ranging from 40 to 70 µm long, as indicated by Raman mapping and infrared extinction spectroscopy. At room temperature, field‐effect mobility of the synthesized BP thin film is found to be around 160 cm² V^?1 s^?1 along armchair direction and reaches up to about 200 cm² V^?1 s^?1 at around 90 K. Moreover, red phosphorus (RP) covered by exfoliated hexagonal boron nitride (hBN) before conversion shows atomically sharp hBN/BP interface and perfectly layered BP after the conversion. This demonstration represents a critical step toward the future realization of large scale, high‐quality BP devices and circuits.     

Bendable and Splitter-Integrated Optical Subassembly Based on a Flexible Optical Board

A bendable and splitter-integrated optical subassembly (OSA) is suggested as a short-distance board-to-board optical interconnection. This OSA was fabricated by simply packaging a vertical-cavity surface-emitting laser on a flexible optical board having an embedded 1 $times$ 8 optical splitter waveguide. Finally, we measured various optical characteristics of the OSA, including insertion, twist, and bending losses.      

Phosphorus load estimation in the Saginaw River, MI using a Bayesian hierarchical/multilevel model

We propose the use of Bayesian hierarchical/multilevel ratio approach to estimate the annual riverine phosphorus loads in the Saginaw River, Michigan, from 1968 to 2008. The ratio estimator is known to be an unbiased, precise approach for differing flow-concentration relationships and sampling schemes. A Bayesian model can explicitly address the uncertainty in prediction by using a posterior predictive distribution, while in comparison, a Bayesian hierarchical technique can overcome the limitation of interpreting the estimated annual loads inferred from small sample sizes by borrowing strength from the underlying population shared by the years of interest. Thus, by combining the ratio estimator with the Bayesian hierarchical modeling framework, long-term loads estimation can be addressed with explicit quantification of uncertainty. Our study results indicate a slight decrease in total phosphorus load early in the series. The estimated ratio parameter, which can be interpreted as flow-weighted concentration, shows a clearer decrease, damping the noise that yearly flow variation adds to the load. Despite the reductions, it is not likely that Saginaw Bay meets with its target phosphorus load, 440 tonnes/yr. Throughout the decades, the probabilities of the Saginaw Bay not complying with the target load are estimated as 1.00, 0.50, 0.57 and 0.36 in 1977, 1987, 1997, and 2007, respectively. We show that the Bayesian hierarchical model results in reasonable goodness-of-fits to the observations whether or not individual loads are aggregated. Also, this modeling approach can substantially reduce uncertainties associated with small sample sizes both in the estimated parameters and loads.     

The use of self checks and voting in software error detection: anempirical study

The results of an empirical study of software error detection using self checks and N-version voting are presented. Working independently, each of 24 programmers first prepared a set of self checks using just the requirements specification of an aerospace application, and then each added self checks to an existing implementation of that specification. The modified programs were executed to measure the error-detection performance of the checks and to compare this with error detection using simple voting among multiple versions. The analysis of the checks revealed that there are great differences in the ability of individual programmers to design effective checks. It was found that some checks that might have been effective failed to detect an error because they were badly placed, and there were numerous instances of checks signaling nonexistent errors. In general, specification-based checks alone were not as effective as specification-based checks combined with code-based checks. Self checks made it possible to identify faults that had not been detected previously by voting 28 versions of the program over a million randomly generated inputs. This appeared to result from the fact that the self checks could examine the internal state of the executing program, whereas voting examines only final results of computations. If internal states had to be identical in N-version voting systems, then there would be no reason to write multiple versions     

Eosinophilic foreign body granuloma after multiple self-administered bee stings

A bee sting can cause a foreign body granuloma of the skin, due to activated macrophages at the stinging site. A 52-year-old woman presented with a large doughnut-shaped ulcerative tumour on the left side of her face. A bean-sized facial papule had grown to a 4.0 x 3.9 x 1.1 cm mass after multiple bee stings induced by herself over a period of 1 year. Histology showed epidermal ulceration with granulomatous inflammatory cell infiltration of many eosinophils. No micro-organisms or foreign bodies were identified. Intralesional triamcinolone acetonide was not effective, but an excellent outcome was obtained using carbon dioxide laser vaporization of the lesion.     

Small-signal substrate resistance effect in RF CMOS cascode amplifier

With common-source RF application amplifier, it is well known that the small substrate resistance helps to improve the output resistance as well as the transconductance. This idea can be easily extended to all CMOS transistors in RF applications. However, with cascode amplifier at high frequencies, the maximum available gain, noise figure minimum, and the tuned output impedance are improved by increasing the substrate resistance of the common-gate transistor, so that the range of operational frequency can be extended. These contradicting phenomenons between the common-source and common-gate topology can be explained theoretically, and the supporting measurement results are presented base on a 0.35 /spl mu/m CMOS technology.     

The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

An Fe-doped GaN buffer layer was employed in the growth of AlGaN/GaN high-electron mobility transistors (HEMTs) on Si substrates. In order to investigate the effects of an Fe-doped GaN buffer on OFF-state breakdown characteristics, HEMT devices with an Fe-doped GaN buffer on Si substrates were fabricated along with conventional devices utilizing an unintentionally doped GaN buffer on Si substrates. The device characteristics were compared. While HEMT devices with the conventional structure showed an extremely unstable OFF-state breakdown behavior due to punchthrough to the Si substrate, it was demonstrated that an Fe-doped GaN buffer layer on a Si substrate successfully suppressed the premature failure caused by Si-induced breakdown. As a result, the AlGaN/GaN HEMTs with an Fe-doped GaN buffer on Si substrates exhibited much more consistent and enhanced breakdown voltages, when compared with the conventional devices. Consequently, it is highly desirable that AlGaN/GaN HEMTs on Si substrates have an Fe-doped GaN buffer layer in order to achieve stable and robust OFF-state breakdown characteristics