高温稀土永磁Sm2(Co,Cu,Fe,Zr)17 的制备和性能

制备了高温稀土永磁材料Sm(Coba1Fe0．26Cu0．05Zr0．026)7．0，研究了磁性能与工艺条件的关系．结果表明：提高烧结温度可使材料的Br和(BH)max增大，但是使Hci降低；适当提高真空预烧温度，可使材料在较低烧结温度下致密化，具有较高的Hci和(BH)max和温度稳定性．真空预烧温度过高使性能的急剧降低，其主要原因是Sm的析出．在最佳工艺条件下材料的磁性能参数分别为：Br1．08T3Hci2286kA／m，Hcb932kA／m，(BH)max220．8kJ／m^3；β20-200℃为-0．19％／℃．     

mc-Si:H/c-Si solar cell prepared by PECVD

Hetero-junction solar cells with an mc-Si:H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer's thickness of emitter layer. The highest of V oc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the V oc of 549.8 mV, J sc of 32.19 mA·cm-2 and the cell's area of 1cm2.     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

氧化锌颗粒膜电阻响应-恢复特性研究

测试了氧化锌颗粒膜电阻响应-恢复特性，讨论了颗粒形态，加热电压、环境气氛、气氛浓度和注入方式等因素对电阻响应-恢复特性的影响。结果表明，随着加热电压的升高，电阻响应-恢复的速度和程度明显加大；断续注入时颗粒膜电阻值的响应随着浓度的增加逐步减弱．     

基于MAX6361的掉电保持电路的设计

三星公司推出的微处理器S3C44BOX在嵌入式系统中得到了广泛应用．本文提出了由S3C4480X．IS62WV25616BLL和MAX6361组成的掉电保持电路的设计原理．重点介绍了MAX6361微处理器监控电路的工作特性。此电路可实现电源监控．处理器复位、电源自动切换及掉电时的数据保持等功能。     

可靠性预计方法及思考

本文介绍了可靠性预计的目的,并对当前较为常见的可靠性预计模型或方法做了比较和说明,也对造成可靠性预计局限性的原因做了分析,最后对在可靠性工程工作中对待可靠性预计的态度做了探讨.     

基于VHDL实现单精度浮点数的加／减法运算

研究了单精度浮点数加／减法的结构及其设计方法，并在Aldec公司的Active—HDL软件环境下，采用VHDL语言进行设计，并进行了仿真验证，计算精度可以达到10^-7。     

尼龙6/改性双马来酰亚胺共混物的制备

将尼龙6与改性双马来酰亚胺熔融共混形成合金以提高其热稳定性能.用转矩流变仪考察了尼龙6/改性双马来酰亚胺共混体系熔融反应过程中的流变行为,用TG-DSC测试了共混物的热性能.结果表明:熔融共混时,2组分间的化学反应进行很快,改性双马来酰亚胺用量增加,共混物的熔融粘度增大,温度或转速升高,平衡转矩降低;改性双马来酰亚胺可明显改善尼龙6的高温热稳定性能,当尼龙6与改性双马来酰亚胺的质量比为20/1时,共混物在236-340℃温度范围内有很好的热稳定性.     

基于互信息域的L2S接口方法研究

分析了基于互信息域的有效信噪比映射的L2S(link level to system level)接口方法,研究了信道相关带宽对接口复杂度的影响,在不明显降低预测准确度的前提下,验证了利用信道相关带宽来简化接口计算复杂度的可能性。