Influence of layout parameters on snapback characteristic for a gate-grounded NMOS device in 0.13-μm silicide CMOS technology

Gate-grounded NMOS （GGNMOS） devices with different device dimensions and layout floorplans have been designed and fabricated in 0.13-μm silicide CMOS technology. The snapback characteristics of these GGN-MOS devices are measured using the transmission line pulsing （TLP） measurement technique. The relationships between snapback parameters and layout parameters are shown and analyzed. A TCAD device simulator is used to explain these relationships. From these results, the circuit designer can predict the behavior of the GGNMOS devices under high ESD current stress, and design area-efficient ESD protection circuits to sustain the required ESD level. Optimized layout rules for ESD protection in 0.13-μm silicide CMOS technology are also presented.     

并联谐振型逆变器控制技术的研究

在分析了锁相环的控制原理以及目前使用的锁相定角控制方法的基础上,提出了一种新的锁相控制方法,并将之应用于感应加热电源装置中,实现定角控制。以MATLAB／Simulink为工具建立了以IGBT为开关器件的并联谐振型逆变器仿真模型,并对仿真结果进行了分析。仿真结果验证了这种锁相控制方法的正确性和有效性。     

4H-SiC同质外延层的质量表征

在高纯半绝缘4H-SiC偏8°衬底上同质外延生长了高质量的外延层,利用X射线双晶衍射、原子力显微镜(AFM)、汞探针C-V以及霍尔效应等测试方法,对样品的结晶质量、表面粗糙度、掺杂浓度以及电子迁移率进行了分析测试,证实外延层的结晶质量相对于衬底有着很大的改善。在同质外延7.5μm的外延层后,其半高宽从衬底的30.55arcsec减小到27.85arcsec;外延层表面10μm×10μm的粗糙度(RMS)为0.271nm;室温下,样品的掺杂浓度为1×1015cm-3时,霍尔迁移率高达987cm2/(V.s);浓度为1.5×1016cm-3时,霍尔迁移率为821cm2/(V.s)。77K时,霍耳迁移率分别为1.82×104cm2/(V.s)和1.29×104cm2/(V.s)。掺杂浓度的汞探针C-V测试结果与霍尔效应的实验数据一致。     

线算子引导Gabor小波的视网膜血管分割

视网膜血管自动分割能辅助诊断某些眼底疾病和系统性血管疾病。为了提高血管自动分割的效率,因此提出了一种线算子引导Gabor小波的视网膜血管分割方法。利用线算子检测血管方向的最优匹配角,将其作为Gabor小波变换的旋转角构建4个不同尺度的Gabor小波,并提取4维Gabor小波特征,加上两个线强度和预处理后的图像灰度,构建7维特征向量,采用SVM进行分类。与其他基于Gabor小波的方法相比,本方法只需计算最优匹配角所对应方向的Gabor小波特征,大大降低了多尺度Gabor小波特征提取的计算量,此外线算子特征与Gabor小波特征的良好互补性,有利于提高血管与背景的辨别度。在DRIVE眼底数据库上进行实验,其平均准确率、灵敏度及特异性分别为0. 936 1、0. 823 8及0. 955 4,获得了不错的分割性能。     

汽车前悬外倾角检测系统电控设计研究

汽车前悬外倾角检测系统设置在前悬总成装配线上,其上位机根据采集的激光位移传感器实时数据计算外倾角,计算完成后判断外倾角是否合格,能对汽车前悬外倾角进行线上检测,达到了100%的检测率,保证了前悬产品的合格率。     

A New Strategy to Effectively Suppress the Initial Capacity Fading of Iron Oxides by Reacting with LiBH4

In this work, a new facile and scalable strategy to effectively suppress the initial capacity fading of iron oxides is demonstrated by reacting with lithium borohydride (LiBH₄) to form a B‐containing nanocomposite. Multielement, multiphase B‐containing iron oxide nanocomposites are successfully prepared by ball‐milling Fe₂O₃ with LiBH₄, followed by a thermochemical reaction at 25–350 °C. The resulting products exhibit a remarkably superior electrochemical performance as anode materials for Li‐ion batteries (LIBs), including a high reversible capacity, good rate capability, and long cycling durability. When cycling is conducted at 100 mA g^?1, the sample prepared from Fe₂O₃–0.2LiBH₄ delivers an initial discharge capacity of 1387 mAh g^?1. After 200 cycles, the reversible capacity remains at 1148 mAh g^?1, which is significantly higher than that of pristine Fe₂O₃ (525 mAh g^?1) and Fe₃O₄ (552 mAh g^?1). At 2000 mA g^?1, a reversible capacity as high as 660 mAh g^?1 is obtained for the B‐containing nanocomposite. The remarkably improved electrochemical lithium storage performance can mainly be attributed to the enhanced surface reactivity, increased Li⁺ ion diffusivity, stabilized solid‐electrolyte interphase (SEI) film, and depressed particle pulverization and fracture, as measured by a series of compositional, structural, and electrochemical techniques.     

High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS3 Nanosheet

2D materials, represented by transition metal dichalcogenides (TMDs), have attracted tremendous research interests in photoelectronic and electronic devices. However, for their relatively small bandgap (<2 eV), the application of traditional TMDs into solar‐blind ultraviolet (UV) photodetection is restricted. Here, for the first time, NiPS₃ nanosheets are grown via chemical vapor deposition method. The nanosheets thinning to 3.2 nm with the lateral size of dozens of micrometers are acquired. Based on the various nanosheets, a linearity is found between the Raman intensity of specific A_g modes and the thickness, providing a convenient method to determine their layer numbers. Furthermore, a UV photodetector is fabricated using few‐layered 2D NiPS₃ nanosheets. It shows an ultrafast rise time shorter than 5 ms with an ultralow dark current less than 10 fA. Notably, this UV photodetector demonstrates a high detectivity of 1.22 × 10¹² Jones, outperforming some traditional wide‐bandgap UV detectors. The wavelength‐dependent photoresponsivity measurement allows the direct observation of an admirable cut‐off wavelength at 360 nm, which indicates a superior spectral selectivity. The promising photodetector performance, accompanied with the controllable fabrication and transfer process of nanosheet, lays the foundation of applying 2D semiconductors for ultrafast UV light detection.     

Facile Two‐Step Synthesis of All‐Inorganic Perovskite CsPbX3 (X = Cl,Br, and I) Zeolite‐Y Composite Phosphors for Potential Backlight Display Application

Recently developed CsPbX₃ (X = Cl, Br, and I) perovskite quantum dots (QDs) hold great potential for various applications owing to their superior optical properties, such as tunable emissions, high quantum efficiency, and narrow linewidths. However, poor stability under ambient conditions and spontaneous ion exchange among QDs hinder their application, for example, as phosphors in white‐light‐emitting diodes (WLEDs). Here, a facile two‐step synthesis procedure is reported for luminescent and color‐tunable CsPbX₃–zeolite‐Y composite phosphors, where perovskite QDs are encapsulated in the porous zeolite matrix. First zeolite‐Y is infused with Cs⁺ ions by ion exchange from an aqueous solution and then forms CsPbX₃ QDs by diffusion and reaction with an organic solution of PbX₂. The zeolite encapsulation reduces degradation and improves the stability of the QDs under strong illumination. A WLED is fabricated using the resulting microscale composites, with Commission Internationale de I'Eclairage (CIE) color coordinates (0.38, 0.37) and achieving 114% of National Television Standards Committee (NTSC) and 85% of the ITU‐R Recommendation BT.2020 (Rec.2020) coverage.     

图像处理中扩散方程的快速数值解法

该文给出图像处理中常用的二阶非线性扩散方程的快速求解算法。首先提出一种线性差分离散格式,既包含了显格式,也包含了隐格式;其次给出了数值稳定性条件,最后讨论了3种快速解法：多重网格法(MG),交替方向隐格式(ADI),和加性算子分离格式(AOS)。对3种方法进行了比较和评价,结果表明：用3种方法得到的去噪效果基本相同;ADI和AOS实现较简单;多重网格法得到的恢复图像在光滑区域视觉上优于两种直接法。     

乘性噪声环境下基于局部最佳检测器的伪码捕获方法

扩频系统常常工作在多径环境中,伴随着加性噪声的同时往往还存在着乘性噪声。该文提出了一种乘性噪声环境下伪码捕获方法,将伪码捕获等价为假设检验问题,利用局部最佳检测算法推导出乘性噪声环境下的伪码捕获检测统计量,文中给出了基于局部最佳检测算法的捕获结构,并与传统的平方和检测器进行了性能仿真对比,结果表明该文所提出的捕获方法在乘性噪声环境下检测性能较平方和检测器有较大幅度的提高,而在无乘性噪声的环境下检测性能只较传统的平方和检测器检测性能稍有降低。