Enhanced electron emission from phosphorus-doped diamond-cladsilicon field emitter arrays

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities     

Directly Compressible Acetaminophen Compositions Prepared by Fluidized-Bed Granulation

Polyvinylpyrrolidone (PVP) in aqueous solution was used as a binding agent in a fluidized-bed system to agglomerate acetaminophen powder into directly compressible granules. It was found that a minimal amount of 5% w/w PVP in a concentration of 7.5% w/v or less was needed to produce granules with an acceptable flow and the corresponding tablets having enough hardness without capping. There was a strong correlation between the time for 80% dissolved (T₈₀) and the logarithm of granule volume-surface mean diameter. A directly compressible acetaminophen composition to manufacture tablets having a T₈₀ value less than 30 min can be prepared simply by adding an appropriate amount of disintegrant (crospovidone, sodium starch glycolate, or pregelatinized starch) to the agglomerated granules.     

A new space-vector-modulated control for a unidirectionalthree-phase switch-mode rectifier

A unidirectional three-phase switch-mode rectifier that delivers sinusoidal input currents in phase with the corresponding input phase voltages is proposed and analyzed in this paper. In the proposed topology, three AC switches are placed before the bridge rectifier and, respectively, across two power lines. A simple control scheme combing space-vector modulation and hysteresis current control is presented. Sinusoidal input line currents are observed in experimental results     

An analytical grain-barrier height model and its characterizationfor intrinsic poly-Si thin-film transistor

An analytical model for the grain-barrier height of the intrinsic poly-Si thin-film transistors (TFTs) is developed, in which the grain-barrier height for the applied gate voltage smaller than the threshold voltage is obtained by solving the charge neutrality equation and the grain-barrier height for the applied gate voltage larger than the threshold voltage is obtained by using the quasi-two-dimensional (2-D) method. Good agreements between experimental and simulation results are obtained for a wide gate voltage range     

Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT

A technique for SiO₂ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO₂ film with a lower P-etch rate shows a dense structure. LPD SiO₂ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO ₂ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)     

Comparison of Displacement and Mixing Diffusers

In order to cumpare the peformance of different supply diffuers of ventilation air, the airflow passern, temperature stratifiation and contaminant dispersion in a furnitured office ventilated by three kinds of air diffuer were numerically investigated. The air diffuers studied in this paper are a quarter-cylinder displacement diffuer on the floor and mixing diffuers (linear and vortex diffuers) on the ceiling. The heat sources in the of-fice are considered to be 50% convective and 50% radiative. The k-? two-equatwn model of turbulence is employed to predict the turbulent diffusion. The results show that the displacement diffuser provides a rather uniform flow field with low velocify in most areas, and the vertical temperature difference from floor to ceiling is as high as 6 K. With the linear diffuser, the air velociry is high, and the temperature is uniform both horizontally and vertically. The air velocity generated by the vortex diffuser is moderate. The distributions of the temperature and the contaminant are rather uniform.     

Multidimensional augmented current equation including velocityovershoot

The augmented drift-diffusion current equation, which includes velocity overshoot effects through the space derivatives of the electric field, cannot be directly extended beyond one dimension. A new formalism is developed which considers the carrier heating and the distribution relaxation effects to obtain a multidimensional augmented drift diffusion current equation. The equivalent mobility containing the velocity overshoot correction is derived from the perturbation analysis on the carrier temperature using the energy balance equation. The issues related to the numerical implementation of this generalized model and the validity of the assumptions are also discussed     

蒸汽发生器二次侧清洁度的视频检查

立式平管板Ｕ形管束的压水堆核电站蒸汽发生器安装至瞬变工况期间，管板上表面的铁基金属残余物的堆积和外来物的存在，以及商业运行后管板、传热管、管子支撑板等的低流速区域里沉积物的堆积要求进行蒸汽发生器的清洁度检查。介绍了蒸汽发生器二次侧清洁度的视频检查技术。该技术适用于蒸汽发生器安装至瞬变工况和投入商业运行后可能发生污染的各阶段的清洁度检查。     

Electrical properties and positron annihilation study of (Ba<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ho<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)TiO<Subscript>3</Subscript> ceramics

DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba_1−x Ho _x )TiO₃ ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba_1−x Ho _x )TiO₃ is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x = 0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO₃ by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The local electron density and defect concentration estimated using positron annihilation technique conforms well to the features found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model.