原子印章YAG激光雕刻机的研究

本文阐述了原子印章ＹＡＧ脉冲激光雕刻机的工作原理，详细介绍了整机结构特点，以及激光器参数、工艺参数和计算机排版软件功能，并简述了激光进行原子印章雕刻时的作用机理，和激光特性参数、印章材料及计算机软件等因素对印章雕刻效果的相应影响。     

叶绿素衍生物─CPD_4在人血清中的激发和发射荧光谱

叶绿素衍生物４号（ＣＰＤ４）是一种新型中药光敏剂，本文研究了不同浓度的ＣＰＤ４分别在含１０％不同血型人血清的生理盐水中以及纯生理盐水中的激发和发射荧光光谱，并对结果进行了分析，结论对ＣＰＤ４在光动力诊断恶性肿瘤的临床应用具有一定的指导意义．     

低温硅双极晶体管基区优化设计

常规双极晶体管在７７Ｋ下电流增益和频率性能都严重退化。本文首先分析了低温双极晶体管基区Ｇｕｍｍｅｌ数，基区方块电阻，渡越时间和穿通电压等参数与温度及基区掺杂的关系，然后讨论了低温双极器件基区的优化设计问题。     

The inverse mapping and distortion measures for 8-node hexahedral isoparametric elements

The inverse relations of the isoparametric mapping for the 8-node hexahedra are derived by using the theory of geodesics in differential geometry. Such inverse relations assume the form of infinite power series in the element geodesic coordinates, which are shown to be the skew Cartesian coordinates determined by the Jacobian of the mapping evaluated at the origin. By expressing the geodesic coordinates in turn in terms of the isoparametric coordinates, the coefficients in the resulted polynomials are suggested to be the distortion parameters of the element. These distortion parameters can be used to sompletely describe the inverse relations and the determinant of the Jacobian of the mapping. The meanings of them can also be explained geometrically and mathematically. These methods of defining the distortion measures and deriving the inverse relations of the mapping are completely general, and can be applied to any other two-or three-dimensional isoparametric elements.     

微机在应变测量中的应用

微机在应变测量中的应用，采用上位机和下位机组合方式．上位机为一台ＩＢＭ－ＰＣ／ＸＴ微机，用于对数据进行后处理．下位机以Ｚ８０－ＣＰＵ为控制器，由传感器、转换器、接口及外设等组成数据采集器，实施对应变、压力和位移等参数的采集、显示和打印（即数据的预处理）．上位机和下位机之间的数据传输，采用串行的方式，通过ＲＳ－２３２接口完成．本文主要以应变的采集处理为例，介绍系统功能、硬件配置及软件设计．     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Effects of thymectomy and glucocorticoid therapy on peripheral lymphocytes in myasthenia gravis

Clinical manifestations and peripheral blood lymphocyte subset changes were studied in patients with myasthenia gravis (MG) to elucidate the mechanism of clinical improvement following treatment, with thymectomy (Tx) or glucocorticoid (GC) therapy. The changes found were: 1. There was a significant increase in percentages of CD3+, CD29+ CD4+ cells and CD4/CD8 ratio and a significant decrease in percentages of CD8+ and CD16,56+ cells in patients who had never been treated with any immune therapy. 2. After Tx or GC therapy, CD3+ and CD4+, CD29+ cells were decreased, but the number CD19+ and CD16, CD56 cells did not change. 3. Tx had a special effect on CD8+ cells. In most of the patients who showed clinical improvement after Tx, CD8+ cells were increased and CD4/CD8 ratio wad decreased. 4. Anti-acetylcholine receptor (AChRAb) titers were markedly decreased after GC therapy. These results indicate that there were obvious abnormalities in cell-mediated immunity in addition to those in humoral immunity in myasthenia gravis. These abnormalities tended to be normalized after Tx or GC therapy.     

Characterization of mutated transforming growth factor-beta s which possess unique biological properties

Transforming growth factor-beta (TGF-beta) is a potent regulator of cell growth and differentiation. On the basis of the crystal structure of TGF-beta 2, we have designed and synthesized two mutant TGF-beta s, TGF-beta 1 (71 Trp) and TGF-beta 1 (delta 69-73). Although both of these molecules inhibited the growth of Mv1Lu mink lung epithelial cells and LS1034 colorectal cancer cells, which are affected equally by TGF-beta 1 and TGF-beta 2, TGF-beta 1 (delta 69-73) was much less potent than TGF-beta 1 or TGF-beta 1 (71 Trp) at inhibiting the growth of LS513 colorectal cancer cells which are growth-inhibited by TGF-beta 1 but not TGF-beta 2. Both TGF-beta 1 (71 Trp) and TGF-beta 1 (delta 69-73) increased levels of mRNAs for fibronectin and plasminogen activator inhibitor with Mv1Lu cells, whereas only TGF-beta 1 (71 Trp) and not TGF-beta 1 (delta 69-73) up-regulated the mRNA level of carcinoembryonic antigen in LS513 cells. The expression level of carcinoembryonic antigen mRNA in LS1034 cells was not altered by either wild-type or mutant TGF-beta s. Receptor labeling experiments demonstrated that TGF-beta 1 (71 Trp) bound with high affinity to the cell-surface receptors of Mv1Lu, LS1034, and LS513 cells while TGF-beta 1 (delta 69-73) bound effectively to the receptors of Mv1Lu and LS1034 cells but much less to the receptors on LS513 cells.(ABSTRACT TRUNCATED AT 250 WORDS)     

Design model and guidelines for n-well guard ring in epitaxial CMOS

This work reports the development of design model for n-well guard rings in a CMOS process utilizing a low-doped epitaxial layer on a highly doped substrate. The validity of the model has been judged by a wide range of experimental data measured from the fabricated n-well guard ring structures with guard ring width as parameter. From the model developed, guidelines have been drawn to minimize the guard ring width while critically suppressing the amount of electrons escaping from the guard ring     

Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states