新型高k栅介质材料研究进展

随着半导体技术的不断发展，MOSFET（metal-oxide-semiconductor field effect transistor）的特征尺寸不断缩小，栅介质等效氧化物厚度已小至nm数量级。这时电子的直接隧穿效应将非常显著，将严重影响器件的稳定性和可靠性。因此需要寻找新型高k介质材料，能够在保持和增大栅极电容的同时，使介质层仍保持足够的物理厚度来限制隧穿效应的影响。本文综述了研究高k栅介质材料的意义；MOS栅介质的要求；主要新型高k栅介质材料的最新研究动态；展望了高k介质材料今后发展的主要趋势和需要解决的问题。     

8Li次级束的产生

在北京串列加速器次级束流线上通过2 H(7Li,8Li) 1H逆运动学反应产生了用于核天体物理研究的8Li次级束。准直后的次级束纯度达到 80 %以上 ,对于 44MeV的7Li强度约为 3 0s- 1·pnA- 1,可以用来进行逆几何转移反应的实验测量。     

1998年昌江流域暴雨洪水分析

1998年昌江发生了建国以来最大洪水，文章从天气环流背景、降雨特征等方面分析这次洪水形成的特点和发展过程。     

构造作用对油气生成和运聚的影响

有机质从埋藏开始，就处于极其复杂的地球物理化学场中，环境提的能量，一是热量，二是机械能，机械能，主要是通过机械力作用传递给系统的，另外还以机械波的形式赋予系统一定的机械能。当发生断褶构造运动时，机械力对油气运移的影响尤为突出，它经能量的迁移转化，促成了包括机械力降解和地应力驱动等一系列的连锁反应，制造了一次次高效的成油（生运）事件，本文以突变论为着眼点，按照改造控制建造的思路，大胆提出构造运动制造生排烃事件，成就含油气系统的假说。     

苯磺隆干悬浮剂技术浅析

通过对苯磺隆干悬浮剂项目的研究,进一步了解干悬浮剂的加工工艺和配方中各种助剂的相互作用;剖析助剂对主要技术指标的影响。     

A STUDY ON ACIDITY AND CATALYTIC PROPERTY OF [B] ZSM-5 CATALYST MODIFIED WITH SILICON COMPOUND BY CHEMICAL SURFACE DEPOSITION OF LIQUID-PHASE TECHNIQUE

The boron heteroatom zeolite catalyst has been modified with silicon compound by Chemical Surface Deposition of Liquid-phase (CLD) technique and the catalytic property of the modified catalyst is studied. Meanwhile, the acidity of the modified zeolite catalysts is characterized through TPD and IR technique, and the fluid adsorption method is used to determine its pore structure. The relationship between the catalytic property of the zeolite catalyst and its pore structure, its acidity has been found. The results of toluene-ethylene alkylation reaction indicate that the selectivity of p-ethyltoluene on the modified zeolite catalyst is higher than that on the zeolite catalyst before silanizated, reaching 94.14%.     

激光导向伺服系统中满意PID调节器的LMI设计

利用带有图像处理功能的小型激光导向伺服系统,可以大大降低目标坐标测定仪操作手跟踪动态飞行目标的操作难度,从而提高激光回波率.与经典的矩阵分解方法不同,本文以线性矩阵不等式方法,研究了激光导向伺服系统的满意PID调节器设计问题.首先从约束指标的相容性出发,给出满足与给定圆形极点约束相容的输出方差的取值范围.然后,在此取值范围内,得到了求取同时满足上述两种约束的PID调节器参数的方法.靶场试验结果证明了其有效性.     

Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively     

轧机主传动万向联轴器辊端接头结构探讨

分析了衬板槽平面与叉头十字轴孔轴线的相对位置对辊端接头应力的影响 ,研究了轧辊扁头与衬板之间间隙所产生的冲击和应力集中 ,讨论了辊端接头中部过渡段结构对应力分布和制造质量的影响。提出辊端接头结构设计的优化方案     

Set－up of a Pure Electron Plasma Device

An electron Penning-Malmberg trap,which can confine an electron column and provide a good platform to investigate the cross-filed transportation of strongly magnetized electron plasma ,has been set up.With the device,an electron plasma with a density of 10^7 cm^-3 can be confined for a relatively long time.The structure of the trap,electron source,as well as the way how th measure electron plasma density profile and velocity distrbustion are introduced in detail.