Optimization of the material flow in a manufacturing plant by use of artificial bee colony algorithm

To survive in today’s competitive global market, companies must perform strategic changes in order to increase productivity, eliminating wasted materials, time, and effort. This study will examine how to optimize the time and effort required to supply raw material to different production lines in a manufacturing plant in Juarez, Mexico by minimizing the distance an operator must travel to distribute material from a warehouse to a set of different production lines with corresponding demand. The core focus of this study is similar to that of the Vehicle Routing Problem in that it is treated as a combinatorial optimization problem. The artificial bee colony algorithm is applied in order to find the optimal distribution of material with the aim of establishing a standard time for this duty by examining how this is applied in a local manufacturing plant. Results show that using this approach may be convenient to set standard times in the selected company.     

Control of attendance applied in higher education through mobile NFC technologies

This paper presents an improved attendance control system, required for continuous evaluation which has become compulsory following the Bologna Process. It provides a solution based on NFC technology and is based on a real project developed and pilot tested at the “Universidad Pontificia de Salamanca, Campus Madrid”.     

Phase stability and transformations in NiTi from density functional theory calculations

We used density functional theory to characterize various crystalline phases of NiTi alloys: (i) high-temperature austenite phase B2; (ii) orthorhombic B19; (iii) the monoclinic martensite phase B19′; and (iv) a body-centered orthorhombic phase (BCO), theoretically predicted to be the ground state. We also investigated possible transition pathways between the various phases and the energetics involved. We found B19 to be metastable with a 1 meV energy barrier separating it from B19′. Interestingly, we predicted a new phase of NiTi, denoted B19′′, that is involved in the transition between B19′ and BCO. B19′′ is monoclinic and can exhibit shape memory; furthermore, its presence reduces the internal stress required to stabilize the experimentally observed B19′ structure, and it consequently plays a key role in NiTi’s properties.     

Assessment of the presence and dynamics of fungi in drinking water sources using cultural and molecular methods

A comparison of different isolation techniques and culture media for detection of filamentous fungi and yeasts in the aquatic environment revealed that the use of membrane filtration with the media dichloran rose bengal chloramphenicol (DRBC) optimized fungi detection in terms of abundance and variety in three untreated water sources with very different characteristics (surface water, spring water, and groundwater). The diversity of the fungi population captured by direct DNA extraction of fungi collected by membrane filtration was compared with the isolates obtained after selective growth using different culture media through amplification of the internal transcribed spacer gene and denaturing gradient gel electrophoresis (DGGE). The Czapek-Dox agar, Sabouraud dextrose agar, and DRBC media showed closer similarities to those obtained by the uncultured biomass for the different water sources. Based on these data and the best enumeration results, DRBC is recommended for the assessment of fungi in water sources using culture-based methods. DGGE was also used to monitor temporal variations in the fungal population structure and showed that each water matrix possessed a distinct population profile as well as that changes in the fungal community can be expected in the different matrices throughout the year.     

CMOS harmonic upconverter with power management of $$2{\bf nd}$$ harmonic for wideband short-range communications

The design and simulation of a 2nd harmonic based upconverter is introduced. With the proposed upconverter, it is possible to reach a good noise figure with power and area reduction. The design of the circuit was made with the UMC \(0.18\,\upmu \hbox {m}\) Mixed Mode/RF CMOS technology. However, the design methodology can be extended to a different CMOS process. According to the performance exhibited by the purposed mixer, it may be useful in wideband short-range communication technologies, such as certified wireless USB.     

A novel CMOS exponential transconductor operating in weak inversion

A novel CMOS exponential transconductor which employs only three NMOS transistors operating in weak inversion, is presented. The main advantage of the proposed circuit is its wide range of exponential behaviour, which reaches up to five decades of current range, and above 10 μA to an input voltage range of 800 mV. The physical realisation is achieved in two forms: in the first one, the circuit is implemented with discrete MOS transistor arrays by CD4007 series; in the second one, the circuit is fully integrated in a 0.5 μm CMOS standard process. Simulated and experimental results of the proposed exponential transconductor are also presented.     

An 8-Bit Digitally Controlled Programmable Phase Shifter Circuit for Sinusoidal Signals with 252∘ Phase Control Range

In this paper, the synthesis, design, and implementation of a programmable phase shifter circuit for sinusoidal signals is presented. The proposed circuit, built-up herein with operational amplifiers (OPAMPs), high precision resistors and low voltage switches, consists of a digitally controlled amplitude attenuator in combination with a single-tone orthogonalizer. Experimental results agree with theoretical background: the attained phase range was 252^° in 256 steps with a median step of 0.9^°. The inaccuracy of the circuit was determined to be of 0.03 %. Contrary to other OPAMP approaches for sinusoidal signals reported in the literature and based on a first-order all-pass filter structure, the approximation suggested in this work is based on a different concept. The achieved results demonstrate the functionality of the system for the case of a sinusoidal signal with frequency of 1 kHz. Notwithstanding, the proposed architecture can be extended to operate at higher frequencies by using different building blocks with larger bandwidth. Furthermore, it can be extended as well to work out with other periodic input waveforms, like triangular shapes or square waves, with the use of an appropriate orthogonalizer.     

Reconstructing the 3D shape and bone mineral density distribution of the proximal femur from dual-energy X-ray absorptiometry

The accurate diagnosis of osteoporosis has gained increasing importance due to the aging of our society. Areal bone mineral density (BMD) measured by dual-energy X-ray absorptiometry (DXA) is an established criterion in the diagnosis of osteoporosis. This measure, however, is limited by its two-dimensionality. This work presents a method to reconstruct both the 3D bone shape and 3D BMD distribution of the proximal femur from a single DXA image used in clinical routine. A statistical model of the combined shape and BMD distribution is presented, together with a method for its construction from a set of quantitative computed tomography (QCT) scans. A reconstruction is acquired in an intensity based 3D-2D registration process whereby an instance of the model is found that maximizes the similarity between its projection and the DXA image. Reconstruction experiments were performed on the DXA images of 30 subjects, with a model constructed from a database of QCT scans of 85 subjects. The accuracy was evaluated by comparing the reconstructions with the same subject QCT scans. The method presented here can potentially improve the diagnosis of osteoporosis and fracture risk assessment from the low radiation dose and low cost DXA devices currently used in clinical routine.     

Melanin films on Au(1 1 1): Adsorption and molecular conductance

We have studied the adsorption and electronic properties of thin melanin films on Au(1 1 1) by scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and density functional (DF) calculations. We have found that the minimum melanin unit detected under different adsorption conditions is consistent with the structural model for eumelanin protomolecules based on tetramer macrocycles formed by four monomer units (hydroquinone, indolequinone and its tautomers) with an inner porphyrin ring. DF calculations reveal that the entire π structure of the tetramers is implied in the chemisorption process through its frontier orbitals (HOMO and LUMO), a fact that is reflected in the change of intramolecular bonds. Also van der Waals interactions give an important contribution to the adsorption energy (≈0.02 eV/Ų). Dried thin melanin films (1 monolayer in thickness) exhibit good electronic conductance due to the presence of localized states near the Fermi level while dried thicker films exhibit a semiconductor-like behavior. Illumination of the thicker films with white light results in significant photo-induced tunneling currents when the melanin-covered Au is made negative with respect to the tip.     

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

AlGaN/GaN high-electron mobility transistors (HEMTs) were fabricated on SiC substrates with epitaxial layers grown by multiple suppliers and methods. Devices with gate lengths varying from 0.50 to 0.09 mum were fabricated on each sample. We demonstrate the impact of varying the gate lengths and show that the unity current gain frequency response (f_T) is limited by short-channel effects for all samples measured. We present an empirically based physical model that can predict the expected extrinsic f_T for many combinations of gate length and commonly used barrier layer thickness (t_bar) on silicon nitride passivated T-gated AlGaN/GaN HEMTs. The result is that even typical high-aspect-ratio (gate length to barrier thickness) devices show device performance limitations due to short-channel effects. We present the design tradeoffs and show the parameter space required to achieve optimal frequency performance for GaN technology. These design rules differ from the traditional GaAs technology by requiring a significantly higher aspect ratio to mitigate the short-channel effects.