Ultra fast symmetry and SIMD-based projection-backprojection (SSP) algorithm for 3-D PET image reconstruction

Remarkable progress in positron emission tomography (PET) development has occurred in recent years, in hardware, software, and computer implementation of image reconstruction. Recent development in PET scanners such as the high-resolution research tomograph (HRRT) developed by CTI (now Siemens) represents such a case and is capable of greatly enhanced resolution as well as sensitivity. In these PET scanners, the amount of coincidence line data collected contains more than 4.5 x 10(9) coincidence lines of response generated by as many nuclear detectors as 120 000. This formidable amount of data and the reconstruction of this data set pose a real problem in HRRT and have also been of the major bottle neck in further developments of high resolution PET scanners as well as their applications. In these classes of PET scanners, therefore, obtaining one set of reconstructed images often requires many hours of image reconstruction. For example, in HRRT with full data collection in a normal brain scan (using SPAN 3), the image reconstruction time is close to 80 min, making it practically impossible to attempt any list-mode-based dynamic imaging since the image reconstruction time would take many days (as much as 43 h or more for 32-frame dynamic image reconstruction). To remedy this data-handling problem in image reconstruction, we developed a new algorithm based on the symmetry properties of the projection and backprojection processes, especially in the 3-D OSEM algorithm where multiples of projection and back-projection are required. In addition, the single-instruction multiple-data (SIMD) technique also allowed us to successfully incorporate the symmetry properties mentioned above, thereby effectively reducing the total image reconstruction time to a few minutes. We refer to this technique as the symmetry and SIMD-based projection-backprojection (SSP) technique or algorithm and the details of the technique will be discussed and an example of the application of the technique to the HRRT's OSEM algorithm will be presented as a demonstration.     

A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Omega input and output impedance. Based on 0.35-mum gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7GHz can be achieved     

Radio resource management of heterogeneous services in mobile WiMAX systems [Radio Resource Management and Protocol Engineering for IEEE 802.16]

IEEE 802.16e, known as mobile WiMAX, has gained much attention recently for its capability to support high transmission rates in cellular environments and QoS for different applications. Beyond what the standard can define, in order to effectively support video streaming, VoIP, and data services, proprietary radio resource management, including multiconnection assignment, scheduling controls, and call admission controls, are essential. In this study we evaluate the downlink performance of a mobile WiMAX cellular system with different radio resource management, especially the scheduler for QoS control and the implementation of multiconnection for streaming applications     

Next-generation 10 GBaud module based on emerging SFP+ with host-based EDC [Topics in Optical Communications]

There has been an ongoing trend to require transceivers for use in datacom and telecom switches to be small and have low power dissipation to enable large port count switches. At speeds between 1 and 4 GBaud the SFP form factor is by far the most commonly used. Up to now 10 GBaud transceivers have used larger devices with larger power dissipations. This article describes the SFP+ module being specified by the SFF Committee (SFF 8431) that will enable the same port densities as the SFP module. The adaptive equalizers and high-speed transmission channels required in the switches to make the SFP+ module work successfully are also described     

Cooperative Communications in Resource-Constrained Wireless Networks

Cooperative communications have been proposed to exploit the spatial diversity gains inherent in multiuser wireless systems without the need of multiple antennas at each node. This is achieved by having the users relay each others messages and thus forming multiple transmission paths to the destination. In resource constrained networks, such as wireless sensor networks, the advantages of cooperation can be further exploited by optimally allocating the energy and bandwidth resources among users based on the available channel state information (CSI) at each node. In the first part of this article, we provide a tutorial survey on various power allocation strategies for cooperative networks based on different cooperation strategies, optimizing criteria, and CSI assumptions. In the second part, we identify the similarities between cooperative networks and several sensor network applications that utilize collaboration among distributed sensors to achieve the system goal. These applications include decentralized detection/estimation and data gathering. The techniques developed in cooperative communications can be used to solve many sensor network problems     

35-nm Zigzag T-Gate $hbox{In}_{0.52}hbox{Al}_{0.48} hbox{As/In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ Metamorphic GaAs HEMTs With an Ultrahigh $f_{max}$ of 520 GHz

Metamorphic GaAs high electron mobility transistors (mHEMTs) with the highest-f _max reported to date are presented here. The 35-nm zigzag T-gate In_0.52Al_0.48As/In_0.53Ga_0.47As metamorphic GaAs HEMTs show f _maxof 520 GHz, f _T of 440 GHz, and maximum transconductance (g _m) of 1100 mS/mm at a drain current of 333 mA/mm. The combinations of f _max and f _T are the highest data yet reported for mHEMTs. These devices are promising candidates for aggressively scaled sub-35-nm T-gate mHEMTs.     

Simple and Accurate Optical Frequency Domain Ranging Using Off-the-Shelf DFB Lasers Subject to Frequency-Shifted Optical Feedback

It is demonstrated that accurate distance measurement may be effected using a commercially available distributed feedback (DFB) semiconductor laser subject to frequency-shifted optical feedback. A simple experimental arrangement is employed wherein a chirped frequency comb is generated in an external cavity DFB laser using an intracavity acoustic-optic modulator. The frequency comb generates a beat frequency which is proportional to the path difference of a target and reference arm. An estimate of the accuracy and resolution of the measurement is given.     

Wide-band balun using composite right/left-handed transmission line

A wide-band balun is developed using a composite right/left-handed (CRLH) transmission line (TL) at 2 GHz. It is composed of a Wilkinson power divider and two phase-adjusting transmission lines, namely the CRLH TL and the conventional TL. The input reflection coefficient is better than -10 dB from 1 to 4 GHz. Over the frequency range of 1.24-3.58 GHz, an amplitude imbalance of less than 0.7 dB and a phase error of less than plusmn10deg have been experimentally demonstrated.     

A Novel Wafer-Level Hermetic Packaging for MEMS Devices

Some emerging microelectromechanical systems (MEMS) devices such as high-performance inertial sensors and high-speed actuators must be operated in a high vacuum and in order to create this vacuum environment, specific packaging is required. To satisfy this demand, this paper presents a novel method for hermetic and near-vacuum packaging of MEMS devices. We use wafer-level bonding technology to combine with vacuum packaging, simultaneously. For this packaging solution, the wafers with air-guided micro-through-holes were placed on a custom-built design housed in a vacuum chamber maintained at a low-pressure environment of sub-10 mtorr. Packaging structure is then sealed by solder ball reflow process with the lower heating temperature of 300degC to fill up micro-through-hole. Experimental results shown the hermetical packaging technique using solder sealing is adapted to the wafer-level microfabrication process for MEMS devices and can achieve better yield and performance. Thus, this technique is very useful for many applications with high performance and low packaging cost can be obtained due to wafer-level processing.     

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at V _ds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for V _ds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.