溶剂萃取分离锂同位素研究Ⅱ.苏丹Ⅰ-中性配位体协萃体系萃取分离锂同位素效应探讨

文章讨论了苏丹I-中性配位体协萃体系萃取分离锂同位素中螯合剂和协萃剂的结构效应。为了获得高的同位素分离效应,螯合剂必须是弱酸性的(PK_α>11),具有强的分子内氢键及易于形成六元螯合环。协萃剂结构不仅要求无空间位阻,而且具有强的配位基。α随配位基的碱性增大而相应提高。萃取络合物中螯合环的增多亦有利于体系α的提高。此外本文还讨论了一些萃取体系的同位素富集方向和萃锂体系用于分离同位素的前景。     

新理念催生新结构——IMTS2006观后感之三

自上世纪90年代以来,机床出现了许多新结构,其中绝大多数没有知识产权问题,也即没有专利的约束。在需要时,任何人均可采用。每一种结构均来自     

油田放射性作业人员外周血淋巴细胞染色体畸变的观察

本文调查了油田212例受γ射线和中子混合辐射照射的作业人员和30例正常人的外周血淋巴细胞染色体畸变。作业人员受γ射线照射的人均年受照剂量为1.28mGy。调查结果表明,放射性测井人员与正常人相比染色体畸变率有显著差异。     

A Petri net based approach to modeling and scheduling for an FMSand a case study

In this paper, a timed-place Petri net (TPPN) model for flexible manufacturing systems (FMSs) is constructed, which contains two major submodels: the stationary transportation model; and the variable process flow model. For multiple automated guided vehicle (AGV) systems, the authors embed a simple rule and introduce a push-AGV strategy in a TPPN model to solve the collision and traffic jam problems of such vehicles. Since a firing sequence of the TPPN from the initial marking to the final marking can be seen as a schedule of the modeled FMS, by using an A^* based search algorithm, namely, the limited-expansion A algorithm, an effective schedule of the part processing can be obtained. To show the promising potential of the proposed work, a prototype FMS is used as a target system for implementation. The experiment results assert that the job-shop scheduling problem can always be satisfactorily solved     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

混合结构楼房爆破拆除倒塌范围的确定

通过对混合结构楼房爆破倾倒过程特点的分析,提出了楼房在倾倒过程中的运动计算模型,并应用体积平衡原理,得到这类楼房爆破爆堆参数计算公式,用该公式计算的结果与实例中爆堆实测数据相比较,相对误差不超过11%.     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Fuzzy consecutive-k-out-of-n:F system reliability

In this paper, we propose a new method to analyze fuzzy consecutive-k-out-of-n:F system reliability using fuzzy GERT. The triangular fuzzy numbers are used to fuzzify probabilities of the consecutive-k-out-of-n:F system and the interval arithmetic, α-cuts and an index of optimism λ are applied to compute fuzzy consecutive-k-out-of-n:F system reliability on fuzzy the GERT network. Futhermore, we can obtain all computation results by “MATHEMATICA” package.