On the oxygen content in sputtering InOx film for transparent electronics

Transparent undoped semiconductor indium oxide films were deposited by using a long-throw rf magnetron sputtering at room temperature. It was found that the variation of oxygen content in sputtering gas has a strong influence on the microstructure and electrical properties of the films. The electrical resistivity varying from 3.5 × 10^?2 to 4.7 × 10⁴ Ω-cm for oxygen contents ranging from 0 to 50 % was obtained. The optical band gap decreases as the oxygen content increases, and the average visible transmittance of the indium oxide is ~85 %. To put into practice, the as-sputtered indium oxide was employed as a channel of thin film transistors on glass substrate with a channel length, 6 μm, and a channel width, 20 μm. Its saturation mobility, threshold voltage, and on/off ratio were obtained to be 9.4 V^?1 s^?1, 1.5 V, and 2.2 × 10⁷. To approach a flexible device, a plastic substrate is employed to replace the rigid substrate, glass; and the relative parameters, saturation mobility, threshold voltage, and on/off ratio, are also measured to be 8.2 V^?1 s^?1, 1.8 V, and 1.4 × 10⁶, respectively.     

Low-temperature sintering and electrical properties of Co-doped ZnO varistors

ZnO–Bi₂O₃–B₂O₃-based varistors doped with each kind of cobalt oxides were prepared by conventional ceramic processing. The effects of CoO, Co₂O₃ and Co₃O₄ on the microstructure and the electrical characteristics of varistor samples sintered at 880 °C were investigated separately. Analysis of microstructure indicated the cobalt cations were distributed both in grain regions and grain boundary regions and no crystalline phases containing cobalt were detected in XRD patterns for the samples with various cobalt oxides. All these cobalt oxides could effectively enhance the varistor performance by effectively increasing the nonlinear coefficient and lowing the leakage current, while the breakdown voltage fields increased slightly. Capacitance–voltage characteristics showed the potential barriers of varistor samples increased with the addition of each cobalt oxide. It was found that the addition of same amount of cobalt cations in various cobalt oxides had a different effect on the varistor samples. Best electrical properties were obtained for the varistor sample containing Co₃O₄, in which the nonlinearity coefficient is 28.5, the leakage current density is 3.4 μA and the breakdown voltage field is as low as 260 V/mm.     

Effect of Co doping on the structure,optical and magnetic properties of LaAlO3 thin films

LaAl_1?x Co _x O₃ (x = 0, 0.05 and 0.10) thin films were fabricated on quartz substrates by sol–gel method. X-ray diffraction data indicate that all thin films belong to perovskite LaAlO₃, and there is no secondary phase. Two obvious Raman peaks are observed in the Raman spectra, and the 113 cm^?1 peak is assigned to A₁ mode of perovskite LaAlO₃ while the 696 cm^?1 peak is caused by the Co–O stretching vibration. The band gap of the films decreases from 5.66 to 5.40 eV with the Co composition increasing from 0 to 10 %. The magnetization of the films was investigated, and it enhances significantly with increase of the Co content.     

热湿地区室内挥发性有机物多源散发研究现状

分析热湿地区室内空气污染现状,对影响热湿地区室内空气污染因素的独特特征进行总结。介绍国内外热湿环境下挥发性有机物多污染源散发机制的研究现状,指出湿热条件下室内装修家具等具有多污染源的挥发性有机物散发模型及环境影响因素研究的不足,提出对室内温度场、风速场、湿度场、污染物浓度分布进行模拟仿真的研究方向。     

Preparation and Characterization of TiN Seed Layer in All-Conductive Multilayer Structure for Coated Conductors

TiN films were successfully prepared on biaxially textured Ni-5 at.%W substrates by pulsed laser deposition (PLD), serving as a seed layer of an all-conductive architecture, i.e., SrRuO₃(SRO)/TiN, for coated conductors. The structure and surface morphology of the TiN films were noticeably affected by the substrate temperature and pulse repetition rate. The subsequent conductive SRO and superconducting YBCO layer were deposited on the best sample of TiN buffered Ni-5 at.%W substrates. X-ray diffraction analysis confirmed that the biaxial textures were transferred from the TiN seed layer to the SRO cap layer and YBCO film with excellent out-of-plane and in-plane textures. The superconducting transition curves and the temperature-dependent resistivity of YBCO films on all-conductive buffer and on the traditional insulated CeO₂/YSZ/Y₂O₃ were also investigated.