2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study

We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method     

Experimental and theoretical studies on a distributed temperaturesensor based on Brillouin scattering

Results are reported from recent research on the use of the Brillouin gain/loss mechanism for distributed sensing. A theoretical model of the interaction of the pulsed and CW beams is described and compared with experiments. Results from a system with a 51 km sensing length are presented. We finally investigate issues related to the variation within the sensing fiber of the polarizations of the two beams     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

Temperature dependence study of two-dimensional electron gas effecton the noise performance of high frequency field effect transistors

We present experimental evidence that the noise figure (NF) and associated gain equal to those achieved with GaAs pseudomorphic high electron mobility transistors (GaAs p-HEMT's) can also be accomplished by ion implanted GaAs metal-semiconductor field-effect transistors (GaAs MESFET's). These measured noise figure results as a function of low temperature for GaAs MESFET's and p-HEMT's clearly suggest that the transport properties of the two-dimensional electron gas in HEMT's and p-HEMT's do not make a significant contribution to the noise reduction at high frequency operation of these devices     

A soft switching active snubber optimized for IGBT's in singleswitch unity power factor three-phase diode rectifiers

This paper describes a soft switching active snubber for an IGBT operating in a single switch unity power factor three-phase diode rectifier. The soft switching snubber circuit provides zero-voltage turn-off for the main switch. The high turn-off losses of the IGBT due to current tailing are reduced by zero-voltage switching. This allows the circuit to be operated at very high switching frequencies with regulated DC output voltage, high quality input current and unity input power factor. Simulation and experimental results are included