Crystallization study of chemically vapour-deposited amorphous silicon films by in situ x-ray diffraction

The solid phase crystallization kinetics of chemically vapour-deposited amorphous silicon films were studied by in situ X-ray diffraction. We determined the crystalline volume directly from the Bragg peak intensities at various times during isothermal annealing in the temperature range 578 °C < T < 658 °C. From these experiments we deduced that the crystallization was due to nucleation predominantly at the substrate-film interface followed by crystal growth perpendicular to this interface. The crystal growth rate was thermally activated with an activation energy E_v of 3.1 eV. A strong 〈111〉 preferred orientation of the growing polycrystal was observed and the grain size remained constant at about 60 nm. Evidence of stresses at the amorphous-crystalline interface during the early stages of crystallization was observed. A comparison with previous conductivity measurements is also carried out.     

Developing and fully developed turbulent flow of drag reducing fluids in an annular duct

Velocity profiles for the inner and outer flow regions of annuli are proposed for the turbulent flow of drag reducing fluids. Theoretical expressions for friction factors are developed. From the shear stress equations and the velocity profiles, estimates for the entrance lengths are given.