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71.
ZhaoYahong ZhangZhongpei WuWeiling 《电子科学学刊(英文版)》2003,20(3):177-182
Adaptive modulation and power allocation is introduced into the multicarrier DSCDMA system to improve the system performance and bandwidth efficiency.First,the system design appropriate for adaptive modulation and power allocation is given,then the algorithm of adaptive modulation and power allocation is applied.Simulation results demonstrate great performance improvement compared with the fixed modulated one. 相似文献
72.
As an aid towards improving the treatment of exchange and correlation effects in electronic structure calculations, it is
desirable to have a clear picture of the errors introduced by currently popular approximate exchange-correlation functionals.
We have performed ab initio density functional theory and density functional perturbation theory calculations to investigate
the thermal properties of bulk Cu, using both the local density approximation (LDA) and the generalized gradient approximation
(GGA). Thermal effects are treated within the quasiharmonic approximation. We find that the LDA and GGA errors for anharmonic
quantities are an order of magnitude smaller than for harmonic quantities; we argue that this might be a general feature.
We also obtain much closer agreement with experiment than earlier, more approximate calculations. 相似文献
73.
基于模式理论光栅椭偏参数反演的数值模拟 总被引:5,自引:2,他引:3
将一种广泛用于求解系统优化问题的方法——正单纯形法,求解光栅的椭偏方程。首先,利用求解光栅的傅立叶模式理论对TE和TM波的复反射系数进行求解。然后计算出其相应的椭偏参数(△,Ψ),并在该值的基础上加入不同偏差的随机高斯噪声,将加入噪声后的值(△m,Ψm)作为模拟测量值。最后使用优化算法进行反演。通过对几种常用面形光栅椭偏参数的数值模拟,一方面表明傅立叶模式理论计算光栅的椭偏参数不仅精度高。而且速度快;另一方面表明利用正单纯形法得到的光栅参数值很接近于正演时假设的参数值,从而从理论上证明了利用椭偏法测量光栅各种光学参数的可行性。 相似文献
74.
Effect of doping of carbon nanotubes by magnetic transition metal atoms has been considered in this paper. In the case of
semiconducting tubes, it was found that the system has zero magnetization, whereas in metallic tubes the valence electrons
of the tube screen the magnetization of the dopants: the coupling to the tube is usually antiferromagnetic (except for Cr). 相似文献
75.
Nanocrystalline Gd2O3:A (A=Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol–gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 °C and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 μm). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd2O3 phosphor films due to an efficient energy transfer from Gd2O3 host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 °C, and the optimum concentrations for Eu3+, Dy3+, Sm3+, Er3+ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd3+ in Gd2O3 films, respectively. 相似文献
76.
77.
本文阐述了网络远程维护人员进行网络维护时比较有用的三种有效方法的原理及其设置 ,较好地解决了故障排除的时间和网络维护成本的矛盾。 相似文献
78.
79.
Dong-Soo Yoon Jae Sung Roh Sung-Man Lee Hong Koo Baik 《Journal of Electronic Materials》2003,32(8):890-898
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si
contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuOx/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no
formation of a thin RuOx layer at the RuOx surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film
by pre-annealing leads to the formation of a thin RuOx layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity
of diffusion paths. In particular, the RuOx layer in a nonstoichiometric state is changed to the RuO2-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer.
Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the
RuOx/TiN/poly-Si/Si contact system. 相似文献
80.