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991.
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993.
Given the enormous size of the genome and that there are potentially many other types of measurements we need to do to understand it, it has become necessary to pick and choose one's targets to measure because it is still impossible to evaluate the entire genome all at once. What has emerged is a need to have rapidly customizable microarrays. There are two dominant methods to accomplish custom microarray synthesis, Affymetrix-like microarrays manufactured using light projection rather than semiconductor-like masks used by Affymetrix to mass manufacture their GeneChip/sup TM/ arrays now, or the ink-jet printing method employed by Agilent. The manufacture of these custom Affymetrix-like microarrays can now be done on a digital optical chemistry (DOC) machine developed at the University of Texas Southwestern Medical Center, and this method offers much higher feature numbers and feature density than is possible with ink-jet printed arrays. On a microarray, each feature contains a single genetic measurement. The initial DOC prototype has been described in several publications, but that has now led to a second-generation machine. This machine reliably produces a number of arrays daily, has been deployed against a number of biomedical questions, is being used in new ways and has also led to a number of spin-off technologies.  相似文献   
994.
The state of the surface of n-GaAs crystals upon high-vacuum microwave plasmachemical (HVMWPC) etching in various gas mixtures and the influence of the semiconductor surface condition on the photoelectric characteristics of related metal-semiconductor-metal structures with double Schottky barrier (MSMDSB structures) are investigated. Dependence of the HVMWPC etching rate of the GaAs surface on the gas mixture composition and substrate temperature is determined. It is shown that the HVMWPC etching regime strongly influences the photoelectric properties of MSMDSB structures: the treatment can lead to either growth or drop in photosensitivity of the samples. Optimum etching regimes are established for which good semiconductor surface quality and high photosensitivity of the MSMDSB structures are retained at a high etching rate.  相似文献   
995.
A Linear Cross-Coupled Control System for High-Speed Machining   总被引:4,自引:0,他引:4  
We present a linear cross-coupled controller to improve highspeed contouring accuracy independently of tracking accuracy in a biaxial machine tool feed drive servomechanism. Unlike conventional cross-coupled controllers, the cross-coupled controller presented here is a linear system, so it is very easy to perform the stability and steady-state error analysis, and to optimise the controller parameters. The proposed controller is evaluated experimentally on a CNC LOM machine and compared to an uncoupled controller and a conventional cross-coupled controller. Controller performance is evaluated for a circular contour at a feedrate of 30 m min _1 . The experimental results show that the proposed controller can greatly reduce the contour error at large feedrates. The linear cross-coupled controller is simple to implement and is practical.  相似文献   
996.
A mixed mode digital/analog special purpose VLSI hardware implementation of an associative memory with neural architecture is presented. The memory concept is based on a matrix architecture with binary storage elements holding the connection weights. To enhance the processing speed analog circuit techniques are applied to implement the algorithm for the association. To keep the memory density as high as possible two design strategies are considered. First, the number of transistors per storage element is kept to a minimum. In this paper a circuit technique that uses a single 6-transistor cell for weight storage and analog signal processing is proposed. Second, the device precision has been chosen to a moderate level to save area as much as possible. Since device mismatch limits the performance of analog circuits, the impact of device precision on the circuit performance is explicitly discussed. It is shown that the device precision limits the number of rows activated in parallel. Since the input vector as well as the output vector are considered to be sparsely coded it is concluded, that even for large matrices the proposed circuit technique is appropriate and ultra large scale integration with a large number of connection weights is feasible.  相似文献   
997.
A 640-Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM-C, 0.25-μm CMOS, and optical wavelength-division-multiplexing (WDM) interconnection is fabricated for future broadband backbone networks. A 40-layer, 160×114 mm ceramic MCM forms the basic ATM switch module with 80-Gb/s throughput. It consists of 8 advanced 0.25-μm CMOS LSIs and 32 I/O bipolar LSIs. The MCM has a 7-layer high-speed signal line structure having 50-Ω strip lines, high-speed signal lines, and 33 power supply layers formed using 50-μm thick ceramic layers to achieve high capacity. A uniquely structured closed-loop-type liquid cooling system for the MCM is used to cope with its high power dissipation of 230 W. A three-stage ATM switch is made using the optical WDM interconnection between high-performance MCMs. For WDM interconnection, newly developed compact 10-Gb/s, 8-WDM optical transmitter and receiver modules are used. These modules are each only 80×120×20 mm and dissipate 9.65 W and 22.5 W, respectively. They have a special chassis for cooling, which contains high-performance heat-conductive plates and micro-fans. An optical WDM router based on an arrayed waveguide router is used for mesh interconnection of boards. The optical WDM interconnect has 640-Gb/s throughput and simple interconnection  相似文献   
998.
A new hybrid active power filter (APF) topology   总被引:12,自引:0,他引:12  
In this paper, a new hybrid active power filter topology is presented. A higher-voltage, low-switching frequency insulated gate bipolar transistor (IGBT) inverter and a lower-voltage high-switching frequency metal oxide semiconductor field effect transistor (MOSFET) inverter are used in combination to achieve harmonic current compensation. The function of the IGBT inverter is to support utility fundamental voltage and to compensate for the fundamental reactive power. The MOSFET inverter fulfills the function of harmonic current compensation. To further reduce cost and to simplify control, the IGBT and MOSFET inverters share the same DC-link via a split capacitor bank. With this approach harmonics can be cancelled over a wide frequency range. Compared to the conventional APF topology, the proposed approach employs lower dc-link voltage and generates less noise. Simulation and experimental results show that the proposed active power filter topology is capable of compensating for the load harmonics  相似文献   
999.
Reliability of thermomechanical simulations is critically linked to the accuracy of the mechanical properties that govern the behaviour of structure, like Young's modulus (E) and coefficient of thermal expansion (CTE). For many cases, the values found in literatures are dealing with bulk properties without detailed information on temperature effects. To address such issues, it is necessary to measure the materials parameters as a function of temperature. The measurement of CTE is usually accomplished by evaluating the thermal deflections of a subjected material layer deposited on a substrate, providing that E is known at a specific temperature of experiment. A bilayer method, based on theory of elasticity, is proposed to determine both E and CTE for a given temperature with a good resolution. This paper presents the theoretical analysis, the design and process of the microsystem test structures, and the main calculation results.  相似文献   
1000.
对于今天的织物,易护理性是一项基本要求。然而,理想的易护理效果不可能仅通过Tencel纤维本身的性能来获得,合适的织物组织结构、恰当的前处理,以及最佳的高级整理加工可以提高Tencel织物的易护理性能,并超过其他纤维素纤维。关于织物组织结构的影响已经在其他杂志上有过讨论。本文将说明如何采用不同的前处理、后整理加工,获得高档最终产品的方法。  相似文献   
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