机床工具产品色彩造型初探

本文针对我国机床工具产品色彩设计的现状,结合具体实例,对色彩造型的实质做了初步的探讨。分析了色彩造型和色彩装饰两种设计观和实践效果;以色彩与形状关系及作用的论证为引,论述色彩造型的三大功能作用。并提出可供机床工具产品色彩设计参考的具体设计方法和手段。     

An assessment of potential nonlinear circuit models for thecharacterization of resonant tunneling diodes

The intrinsically fast process of resonant tunneling through double barrier heterostructures along with the existence of negative differential resistance in the current-voltage characteristic of these structures has led to their implementation as sources for high frequency electromagnetic energy. While sources based upon resonant tunneling diodes (RTDs) have produced frequency of oscillations up to 712 GHz, only microwatt levels of performance has been achieved above 100 GHz. Since stability criteria plays critical role in determining the deliverable power of any oscillator, a physically accurate equivalent-circuit model for the RTD is extremely important for optimizing the dynamics of the device-cavity package. This study identifies a distinctly new equivalent circuit model for characterizing the modes of oscillation in RTD-based sources. Specifically, in order to exhibit the fundamental self-oscillations and the overall I-V characteristics (plateau structure and hysteresis) observed experimentally, an accurate circuit model of the RTD must incorporate: (i) a quantum-well inductance which directly chokes the nonlinear conductance and, (ii) a nonlinear access resistance, associated with the accumulation of charge in the injection region of the double barriers, with a nonlocal dependence on the bias across the double barrier structure     

Analysis of thermal instability in multi-finger power AlGaAs/GaAsHBT's

A new theory is developed in this paper to explain the collapse of current gain in multi-finger power AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's). The reasons behind this unwanted phenomenon are fully clarified using a simple model to investigate the thermo-electrical interaction between the fingers. The existence of multi-value equilibrium points in model's constitutive equations is shown to be the necessary condition for the collapse of current gain to appear. For a N-finger device, N different patterns of collapse exist. The criterion to select the global stable pattern is given. The method has been used to predict the collapse in AlGaAs/GaAs HBT's and the agreement is excellent. The method also predicts that the collapse can happen far earlier than is normally expected in multi-finger high-power devices. The influence of ballasting resistance and thermal resistance is also investigated     

对洪水分级的浅见

洪水的等级划分应考虑流量、水位、防洪能力及灾害等因素,综合这些因素把洪水分成5个等级。1、2级洪水,洪水流量小,水位低,基本无灾;3级洪水,洪水流量较大或水位较高,有一定灾害;4级洪水,为大洪水或高水位,有较大灾害;5级洪水,为特大洪水或高水位,灾情严重。     

新的钢铁工业结构与铁矿资源条件的能源优化模型研究

发展我国钢铁工业，资源和能源已经成为两个重要的制约因素。到本世纪末，我国钢产量达1．2亿t，所需资源必须有部分进口。本文论述了新的钢铁企业模型结构及采用部分进口废钢和铁矿石的能源优化问题。     

相转移催化合成芳基烷基醚

报道了以四丁基溴化铵为相转移催化剂，简便地合成了１０个芳基烷基醚，反应几乎是定量地快速进行。     

钢管内径光电检测装置

介绍了一种检测细长钢管内径的光电检测装置。该装置利用线阵ＣＣＤ作传感器，采用８０３１单片机作为主控制。     

Air bearing design, optimization, stability analysis andverification for sub-25 nm flying

Three sub-25 nm fly height sliders are presented for near contact recording. The designs are geared towards the goal of achieving 10 Gb/in ² areal density. The optimization procedure presented shows promise for facilitating achievement of this goal. The dynamic simulations show the stability of these designs when disturbed from their steady state conditions     

Measurement and modeling of the sidewall threshold voltage ofmesa-isolated SOI MOSFETs

Five-terminal silicon-on-insulator (SOI) MOSFETs have been characterized to determine the threshold voltage at the front, back, and sidewall as a function of the body bias. The threshold voltage shift with the body bias at the front and back interfaces can be explained by the standard bulk body effect equation. However, the threshold voltage shift at the sidewall is smaller than predicted by this equation and saturates at large body biases. This anomalous behavior is explained by two-dimensional charge sharing between the sidewall and the front and back interfaces. An analytical model that accounts for this charge sharing by a simple trapezoidal approximation of the depletion regions and correctly predicts the sidewall threshold voltage shift and its saturation is discussed. The model makes it possible to measure the sidewall threshold even when it is larger than the front threshold voltage     

情浸丹青写名园——小谈郝永明的古建园林绘画艺术

郝永明古建园林绘画作品另辟蹊径，难能可贵。郝永明的画，不仅给我国美术宝库增加了一份积累，也给古建园林艺术增添了珍贵的资料。