Short communication: lack of stage-specific embryonic antigen-1 expression by bovine embryos and primordial germ cells

The objective of this study was to determine whether stage-specific embryonic antigen-1, a cellular marker commonly used to identify murine undifferentiated embryonic cells, is also a useful marker for bovine pluripotent cells. Expression of stage-specific embryonic antigen-1 was examined by indirect immunohistochemistry on bovine preimplantation embryos and on primordial germ cells contained in the genital ridge. Expression of stage-specific embryonic antigen-1 was not observed in any of the cleavage-stage bovine embryos examined, including one-cell, two-cell, four-cell, eight-cell, morula, and blastocyst stages, nor in tissue sections of bovine genital ridges collected from embryos on d 34, 37, and 40 of gestation. As expected, expression of stage-specific embryonic antigen-1 was detected on murine preimplantation embryos and on murine teratocarcinoma cells. Results of this study indicate that, unlike in the mouse, stage-specific embryonic antigen-1 is not a useful cellular marker for pluripotent bovine embryonic cells or bovine primordial germ cells.     

Thin-film encapsulation of top-emission organic light-emitting devices with polyurea/Al2O3 hybrid multi-layers

We developed a room-temperature encapsulation process based on multi-stack of ultra thin Al₂O₃ and polyurea layers for top-emission organic light-emitting devices (TEOLEDs). Device structure, including a capping layer for refractive-index matching and a thick polyurea buffer layer, was optimized to enhance light extraction without distorting electroluminescence spectrum. The efficiency of a TEOLED encapsulated with 5 pairs of Al₂O₃(50 nm)/polyurea(20 nm) layers was better than that of a glass-encapsulated TEOLED, whereas their color coordinates were almost identical. Moreover, the half-decay lifetime of a TEOLED encapsulated with 5 pairs of Al₂O₃/polyurea layers was 86% of that of a glass-encapsulated TEOLED. Water vapor transition rate of 5 pairs of Al₂O₃(50 nm)/polyurea(20 nm) layers on PET film was measured as low as 5 × 10⁻⁴ g/m² day.     

A closed-form expression for estimating radiated emissions from the power planes in a populated printed circuit board

An expression for the maximum intensity of radiated emissions from a rectangular power bus structure has been derived based on an analytical cavity-resonator model. The effect of components mounted on the board is modeled by modifying the propagation constant of the waves within the power bus structure. The radiated field intensity is calculated using the equivalent magnetic current around the edges of the power bus structure together with the modified propagation constant. Measurements of a populated test board show that the derived closed-form expression estimates the level of the maximum radiation intensity with reasonable accuracy.     

An Experimental 0.8 V 256‐kbit SRAM Macro with Boosted Cell Array Scheme

This work presents a low‐voltage static random access memory (SRAM) technique based on a dual‐boosted cell array. For each read/write cycle, the wordline and cell power node of selected SRAM cells are boosted into two different voltage levels. This technique enhances the read static noise margin to a sufficient level without an increase in cell size. It also improves the SRAM circuit speed due to an increase in the cell read‐out current. A 0.18 µm CMOS 256‐kbit SRAM macro is fabricated with the proposed technique, which demonstrates 0.8 V operation with 50 MHz while consuming 65 µW/MHz. It also demonstrates an 87% bit error rate reduction while operating with a 43% higher clock frequency compared with that of conventional SRAM.     

Image Independent Driving Power Reduction for High Frame Rate LCD Televisions

In this letter, the constant driving power reduction ratio has been achieved for column drivers regardless of the input image by incorporating a new static power reduction scheme into the previous dynamic power reduction method. The measured power reduction ratio is around 50% for a 120 Hz liquid crystal display panel in such cases of still input video and fallback.     

Design of a capacitor cross-coupled dual-band LNA with switched current-reuse technique

This paper presents the design of a 2.5/3.5-GHz dual-band low-power and low-noise CMOS amplifier (LNA), which uses the capacitor cross-coupling technique and current-reuse method with four switches. The proposed LNA uses a single RF block and a broadband input stage, which is a key aspect for the easy reconfiguration of a dual-band LNA. Switching at the inter-stage and output allows for the selection of a different standard. The dual-band LNA attenuates the undesired interference of a broadband gain response circuit, which allows the linearity of the amplifier to be improved. The capacitor cross-coupled gm-boosting method improves the NF and reduces the current consumption. The proposed LNA employs a current-reused structure to decrease the total power consumption. The inter-stage and output switched resonators switch the LNA between the 2.5-GHz and 3.5-GHz bands. The proposed dual-band LNA optimises power consumption by the securing gain, noise figure and linearity. The simulated performance reveals gains of 16.7 dB and 19.6 dB, and noise figures of 3.04 dB and 2.63 dB at the two frequency bands, respectively. The linearity parameters of IIP3 are ?5.7 dBm at 2.5 GHz and ?9.7 dBm at 3.5 GHz. The proposed dual-band LNA consumes 5.6 mW from a 1.8 V power supply.     

Double S-Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3-Hf0.5Zr0.5O2-Al2O3 Triple-Layer Structure

The negative capacitance (NC) effect, recently discovered in a fluorite-based ferroelectric thin film, has attracted great attention as a rescue to overcome the scaling limitations of the conventional memory and logic devices of highly integrated circuits. The NC effect manifesting an S-shaped polarization–voltage (P–V) curve is initially interpreted by a 1-dimensional Landau Ginzburg Devonshire (LGD) model. However, a series of recent studies have found that this effect can also be explained by the inhomogeneous stray field energy (ISE) model. In this study, by extending the ISE model in the ferroelectric (FE)-dielectric (DE) layered structure, an analytical model that considers the influence of the interfacial screening charge distribution is presented. This model showed that the NC effect in the FE-DE heterostructure can be manifested in various forms other than a single S-shaped P–V curve. In particular, a double S-shaped P–V curve is expected from the fully compensated anti-parallel domain structure, confirmed experimentally in the actual Al₂O₃/(Hf_0.5Zr_0.5)O₂/Al₂O₃ triple-layer structure. Furthermore, to reveal the origin of the double S-shaped P–V curve, a multidomain LGD model is presented. It is confirmed that this phenomenon is attributed to the evolution of inhomogeneous stray field energy.     

A 500-Mb/s quadruple data rate SDRAM interface using a skewcancellation technique

A quadruple data rate (QDR) synchronous DRAM (SDRAM) interface processing data at 500 Mb/s/pin with a 125-MHz external clock signal is presented. Since the QDR interface has a narrower data timing window, a precise skew control on data signals is required. A salient skew cancellation technique with a shared skew estimator is proposed. The skew cancellation circuit not only reduces the data signal skews on a printed circuit board down to 250 ps, but also aligns the data signals with an external clock signal. The entire interface, fabricated in a 0.35-μm CMOS technology, includes a high-speed data pattern generator and consumes 570 mW of power at 3.0-V supply. The active die area of the chip with the on-chip data pattern generator is 2.4 mm²     

Pure‐Red Dye for Organic Electroluminescent Devices: Bis‐Condensed DCM Derivatives

In this paper, the bis‐condensed 4‐(dicyanomethylene)‐2‐methyl‐6‐[p‐(dimethylamino)styryl]‐4H‐pyran ( DCM) derivatives are introduced as a new class of red dye for organic light‐emitting devices (OLEDs). They showed more red‐shifted emission than the mono‐substituted DCM derivatives and the emission maxima increased as the electron‐donating ability of the aromatic donor group increased. On the basis of these results, red light‐emitting devices were fabricated with bis‐condensed DCM derivatives as red dopants. For a device of configuration ITO/TPD/Alq₃ + DADB (5.2 wt.‐%)/Alq₃/Al (where ITO is indium tin oxide, TPD is N,N′‐diphenyl‐N,N′‐bis(3‐methylphenyl)‐1,1′‐biphenyl‐4,4′‐diamine, Alq₃ is tris(8‐hydroxyquinoline) aluminum, and DADB is [2,6‐bis[2‐[5‐(dibutylamino)phenyl]vinyl]‐4H‐pyran‐4‐ylidene]propanedinitrile), pure red emission was observed with Commission Internationale de l’Eclairage (CIE 1931) coordinates of (0.658, 0.337) at 25 mA/cm².