DCS分布式冷却系统在通信基站的应用研究

针对基站柜式空调耗电量大的问题,创造性地使用基站分布式冷却的方式,达到精确送风,节能高效的目的.在应用实践中检验了分布式冷却系统实际节能量和应用效果,总结出分布式冷却系统应用场景和范围,为更大范围推广应用DCS分布式冷却系统提供实践依据.     

一种基于FPGA的可变速率帧结构设计与实现

在简述V.35接口的基础上针对V.35接口速率可变的应用需求提出了一种速率可变的帧结构,该帧结构可支持N×64kb/s(3≤N≤32)速率,从而在V.35接口上实现了多种速率的低速业务传输.     

Effect laws and mechanisms of different temperatures on isothermal tensile fracture morphologies of high-strength boron steel

The fracture behaviour and morphologies of high-strength boron steel were investigated at different temperatures at a constant strain rate of 0.1 s-1 based on isothermal tensile tests. Fracture mechanisms were also analyzed based on the relationship between microstructure transformation and continuous cooling transformation(CCT) curves. It is found that 1) fractures of the investigated steel at high temperatures are dimple fractures; 2) the deformation of high-strength boron steel at high temperatures accelerates diffusion transformations; thus, to obtain full martensite, a higher cooling rate is needed; and 3) the investigated steel has the best plasticity when the deformation temperature is 750 °C.     

Cell-Free Synthesis of Selenoproteins in High Yield and Purity for Selective Protein Tagging

The selenol group of selenocysteine is much more nucleophilic than the thiol group of cysteine. Selenocysteine residues in proteins thus offer reactive points for rapid post-translational modification. Herein, we show that selenoproteins can be expressed in high yield and purity by cell-free protein synthesis by global substitution of cysteine by selenocysteine. Complete alkylation of solvent-exposed selenocysteine residues was achieved in 10 minutes with 4-chloromethylene dipicolinic acid (4Cl-MDPA) under conditions that left cysteine residues unchanged even after overnight incubation. Gd^III−Gd^III distances measured by double electron–electron resonance (DEER) experiments of maltose binding protein (MBP) containing two selenocysteine residues tagged with 4Cl-MDPA-Gd^III were indistinguishable from Gd^III−Gd^III distances measured of MBP containing cysteine reacted with 4Br-MDPA tags.     

基于“IPv6+”的智能IP网络方案

随着第4次工业革命的到来，人类社会正逐步迈向万物互联的智能时代。智能时代需要更加自动化、智能化的IP网络，基于“IPv6+”的SRv6、BIERv6等技术是使能新一代IP网络的关键基础。全面阐述了“IPv6+”的技术内涵，结合华为在智能 IP 网络解决方案上的创新和思考，介绍了“IPv6+”在极简连接、SLA 保障、专网体验、质量感知和云网一体等多个解决方案场景的关键技术与典型应用，助力5G与云业务发展。     

Broad-Spectral-Range Sustainability and Controllable Excitation of Hyperbolic Phonon Polaritons in α-MoO3

Hyperbolic phonon polaritons (HPhPs) in orthorhombic-phase molybdenum trioxide (α-MoO₃) show in-plane hyperbolicity, great wavelength compression, and ultralong lifetime, therefore holding great potential in nanophotonic applications. However, its polaritonic response in the far-infrared (FIR) range remains unexplored due to challenges in experimental characterization. Here, monochromated electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) is used to probe HPhPs in α-MoO₃ in both mid-infrared (MIR) and FIR frequencies and correlate their behaviors with microstructures and orientations. It is found that low structural symmetry leads to various phonon modes and multiple Reststrahlen bands (RBs) over a broad spectral range (over 70 meV) and in different directions (55–63 meV and 119–125 meV along the b-axis, 68–106 meV along the c-axis, and 101–121 meV along the a-axis). These HPhPs can be selectively excited by controlling the direction of swift electrons. These findings provide new opportunities in nanophotonic and optoelectronic applications, such as directed light propagation, hyperlenses, and heat transfer.     

Precise Extraction of Charge Carrier Mobility for Organic Transistors

Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research.