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42.
43.
针对基站柜式空调耗电量大的问题,创造性地使用基站分布式冷却的方式,达到精确送风,节能高效的目的.在应用实践中检验了分布式冷却系统实际节能量和应用效果,总结出分布式冷却系统应用场景和范围,为更大范围推广应用DCS分布式冷却系统提供实践依据. 相似文献
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The fracture behaviour and morphologies of high-strength boron steel were investigated at different temperatures at a constant strain rate of 0.1 s-1 based on isothermal tensile tests. Fracture mechanisms were also analyzed based on the relationship between microstructure transformation and continuous cooling transformation(CCT) curves. It is found that 1) fractures of the investigated steel at high temperatures are dimple fractures; 2) the deformation of high-strength boron steel at high temperatures accelerates diffusion transformations; thus, to obtain full martensite, a higher cooling rate is needed; and 3) the investigated steel has the best plasticity when the deformation temperature is 750 °C. 相似文献
46.
Dr. Adarshi P. Welegedara Dr. Ansis Maleckis Ruchira Bandara Dr. Mithun C. Mahawaththa Iresha Dilhani Herath Yi Jiun Tan Dr. Angeliki Giannoulis Prof. Daniella Goldfarb Prof. Gottfried Otting Prof. Thomas Huber 《Chembiochem : a European journal of chemical biology》2021,22(8):1480-1486
The selenol group of selenocysteine is much more nucleophilic than the thiol group of cysteine. Selenocysteine residues in proteins thus offer reactive points for rapid post-translational modification. Herein, we show that selenoproteins can be expressed in high yield and purity by cell-free protein synthesis by global substitution of cysteine by selenocysteine. Complete alkylation of solvent-exposed selenocysteine residues was achieved in 10 minutes with 4-chloromethylene dipicolinic acid (4Cl-MDPA) under conditions that left cysteine residues unchanged even after overnight incubation. GdIII−GdIII distances measured by double electron–electron resonance (DEER) experiments of maltose binding protein (MBP) containing two selenocysteine residues tagged with 4Cl-MDPA-GdIII were indistinguishable from GdIII−GdIII distances measured of MBP containing cysteine reacted with 4Br-MDPA tags. 相似文献
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Weikang Dong Ruishi Qi Tiansheng Liu Yi Li Ning Li Ze Hua Zirui Gao Shuyuan Zhang Kaihui Liu Jiandong Guo Peng Gao 《Advanced materials (Deerfield Beach, Fla.)》2020,32(46):2002014
Hyperbolic phonon polaritons (HPhPs) in orthorhombic-phase molybdenum trioxide (α-MoO3) show in-plane hyperbolicity, great wavelength compression, and ultralong lifetime, therefore holding great potential in nanophotonic applications. However, its polaritonic response in the far-infrared (FIR) range remains unexplored due to challenges in experimental characterization. Here, monochromated electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) is used to probe HPhPs in α-MoO3 in both mid-infrared (MIR) and FIR frequencies and correlate their behaviors with microstructures and orientations. It is found that low structural symmetry leads to various phonon modes and multiple Reststrahlen bands (RBs) over a broad spectral range (over 70 meV) and in different directions (55–63 meV and 119–125 meV along the b-axis, 68–106 meV along the c-axis, and 101–121 meV along the a-axis). These HPhPs can be selectively excited by controlling the direction of swift electrons. These findings provide new opportunities in nanophotonic and optoelectronic applications, such as directed light propagation, hyperlenses, and heat transfer. 相似文献
50.
Yong Xu Yun Li Songlin Li Francis Balestra Gerard Ghibaudo Wenwu Li Yen‐Fu Lin Huabin Sun Jing Wan Xinran Wang Yufeng Guo Yi Shi Yong‐Young Noh 《Advanced functional materials》2020,30(20)
Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research. 相似文献