Side-Channel Information Characterisation Based on Cascade-Forward Back-Propagation Neural Network

Traditional cryptanalysis assumes that an adversary only has access to input and output pairs, but has no knowledge about internal states of the device. However, the advent of side-channel analysis showed that a cryptographic device can leak critical information. In this circumstance, Machine learning is known as a powerful and promising method of analysing of side-channel information. In this paper, an experimental investigation on a FPGA implementation of elliptic curve cryptography (ECC) was conducted to explore the efficiency of side-channel information characterisation based on machine learning techniques. In this work, machine learning is used in terms of principal component analysis (PCA) for the preprocessing stage and a Cascade-Forward Back-Propagation Neural Network (CFBP) as a multi-class classifier. The experimental results show that CFBP can be a promising approach in characterisation of side-channel information.     

New full-vectorial numerically efficient propagation algorithmbased on the finite element method

A new full-vectorial beam propagation algorithm based on the versatile finite element method, in order to accurately characterize three-dimensional (3-D) optical guided-wave devices, is presented. The computationally efficient formulation is based on the two transverse components of the magnetic field without destroying the sparsity of the matrix equation. The robust perfectly matched layer (PML) boundary condition is incorporated into the formulation so as to effectively absorb the unwanted radiation out of the computational domain. The efficiency and precision of the proposed full-vectorial propagation approach is demonstrated through the analysis of single optical waveguide, directional couplers, and electrooptic modulator     

Design and performance evaluation of amplifier modules in stackable ROADMs for low-cost CWDM access networks

Coarse wavelength division multiplexing (CWDM) network has proven to be promising lower cost network architecture for a significant cost advantage over dense wavelength division multiplexing due to the lower cost of lasers and the filters used in CWDM modules. A compatible amplifier module having bidirectional amplification capability was deployed for introducing inside stackable reconfigurable optical add/drop multiplexers in realizing large-scale CWDM networks. The amplifier module for use in the bidirectional IP transmission confirmed that the insertion losses of the nodes and the losses of the fibers connecting the nodes can be compensated effectively, allowing the network administrator to increase the number of nodes and fiber length of the network. However, the noise generated from the amplification due to amplified spontaneous emission must be considered in network design issues. In this paper, optical power penalties due to the bidirectional amplification were estimated by conducting experimentation on minimum detectable power of optical transceivers. After analyzing the power penalty issue, an IP-over-CWDM ring network was implemented and the performance of network was evaluated by monitoring the power and packet transmissions before and after the amplifier module was turned on.     

Empirically Verified Thermodynamic Model of Gate Capacitance and Threshold Voltage of Nanoelectronic MOS Devices With Applications to HfO2 and ZrO2 Gate Insulators

A thermodynamic variational model derived by minimizing the Helmholtz free energy of the MOS device is presented. The model incorporates an anisotropic permittivity tensor and accommodates a correction for quantum-mechanical charge confinement at the dielectric/substrate interface. The energy associated with the fringe field that is adjacent to the oxide is of critical importance in the behavior of small devices. This feature is explicitly included in our model. The model is verified using empirical and technology-computer-aided-design-generated capacitance-voltage data obtained on MOS devices with ZrO₂, HfO₂, and SiO₂ gate insulators. The model includes considerations for an interfacial low-k interface layer between the silicon substrate and the high-k dielectric. This consideration enables the estimation of the equivalent oxide thickness. The significance of sidewall capacitance effects is apparent in our modeling of the threshold voltage (V_th) for MOS capacitors with effective channel length at 30 nm and below. In these devices, a variation in high-k permittivity produces large differences in V_th. This effect is also observed in the variance of V_th, due to dopant fluctuation under the gate.     

A New Architecture for Nonblocking Optical Switching Networks

With the current technology, all-optical networks require nonblocking switch architectures for building optical cross-connects. The crossbar switch has been widely used for building an optical cross-connect due to its simple routing algorithm and short path setup time. It is known that the crossbar suffers from huge signal loss and crosstalk. The Clos network uses a crossbar as building block and reduces switch complexity, but it does not significantly reduce signal loss and crosstalk. Although the Spanke's network eliminates the crosstalk problem, it increases the number of switching elements required considerably (to 2N ² - 2N). In this paper, we propose a new architecture for building nonblocking optical switching networks that has much lower signal loss and crosstalk than the crossbar without increasing switch complexity. Using this architecture we can build non-squared nonblocking networks that can be used as building block for the Clos network. The resulting Clos network will then have not only lower signal loss and crosstalk but also a lower switch complexity.     

Interconnect limits on gigascale integration (GSI) in the 21stcentury

Twenty-first century opportunities for GSI will be governed in part by a hierarchy of physical limits on interconnects whose levels are codified as fundamental, material, device, circuit, and system. Fundamental limits are derived from the basic axioms of electromagnetic, communication, and thermodynamic theories, which immutably restrict interconnect performance, energy dissipation, and noise reduction. At the material level, the conductor resistivity increases substantially in sub-50-nm technology due to scattering mechanisms that are controlled by quantum mechanical phenomena and structural/morphological effects. At the device and circuit level, interconnect scaling significantly increases interconnect crosstalk and latency. Reverse scaling of global interconnects causes inductance to influence on-chip interconnect transients such that even with ideal return paths, mutual inductance increases crosstalk by up to 60% over that predicted by conventional RC models. At the system level, the number of metal levels explodes for highly connected 2-D logic megacells that double in size every two years such that by 2014 the number is significantly larger than ITRS projections. This result emphasizes that changes in design, technology, and architecture are needed to cope with the onslaught of wiring demands. One potential solution is 3-D integration of transistors, which is expected to significantly improve interconnect performance. Increasing the number of active layers, including the use of separate layers for repeaters, and optimizing the wiring network, yields an improvement in interconnect performance of up to 145% at the 50-nm node     

A modified rain attenuation prediction model for tropical V‐band satellite earth link

Radio wave propagation plays a very important part in the design and eventually dictates performance of space communication systems. Over time, the requirements of satellite communication have grown extensively where higher capacity communications systems are needed. Escalating demands of microwave and millimetre wave communications are causing frequency spectrum congestion. Hence, existing and future satellite system operators are planning to employ frequency bands well above 10 GHz. The challenge in operating at such high frequencies for communication purposes is that there exists stronger electromagnetic interaction between the radio signals and atmospheric hydrometeors. Such instances will degrade the performance of such high frequency satellite communication systems. The development of a revised model for a better‐improved rain fade prediction of signal propagations in tropical region is considered very important. Researchers and engineers can employ the model to accurately plan the future high frequencies satellite services. Copyright © 2014 John Wiley & Sons, Ltd.     

Effects of feeding an aquatic weed Lemna trisulaca as partial replacement of fish meal on the performance of growing ducklings

Growing ducklings were fed diets containing an aquatic weed Lemna trisulaca meal (LTM) replacing, on a protein basis, either 40, 60 or 80 g kg^?1 of the fish meal (FM) from a control diet which contained 120 g FM kg^?1. Partial replacement of FM (40 and 60 g kg^?1 of the FM) by LTM on a protein basis showed good growth and low food consumption but food conversion efficiency was found to be comparable. It was concluded that LTM could be considered as a protein feed supplement for growing ducklings and also as a part replacement of animal protein (FM) in the nutrition of growing ducklings without deleterious effect on performance.     

Accurate analysis of MMI devices with two-dimensional confinement

The accurate analysis of multimode interference (MMI) devices with two-dimensional (2-D) confinement has been demonstrated by using the least squares boundary residual (LSBR) method. Accurate modal propagation constants and spatial field profiles in the MMI section are obtained by using the vector H-field based finite element method. The accurate calculation of the excited modal coefficients is achieved by using the LSBR, which satisfies the continuity of the transverse field components more rigorously than using simple overlap integrals     

Finite-element modeling of one- and two-dimensional MQWsemiconductor optical waveguides

A finite-element characterization of optical waveguides incorporating multiple-quantum-well (MQW) structures is presented. Optical modeling of a planar MQW region is tested to verify that the quantum-well region can be replaced by a homogeneous region with a suitable effective index. Optical modeling of a semiconductor laser incorporating MQW regions with two-transverse-dimensional confinement is then used to identify the range of single-lateral-mode operation. The effective index, the power fraction in the active region, and the spot size dependence on the total optical power for the case of a self-defocusing MQW region are also presented