APT（STLRI）—1.78型单模光纤（缆）连接器简介

利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。     

Solution of Helmholtz equation by Trefftz method

The application of the Trefftz method for calculating wave forces on offshore structures is presented. Indirect and direct formulations using complete and non-singular systems of Trefftz functions for the Helmholtz equation are posed in this paper. An effective technique using different interpolation functions for the velocity potential and wave force are suggested to improve the computational accuracy of the wave force. The numerical examples show that the present method is highly efficient and accurate.     

Ionothermal synthesis of a three-dimensional zinc phosphate with DFT topology using unstable deep-eutectic solvent as template-delivery agent

A three-dimensional zinc phosphate compound with DFT topology, designated as ZnPO₄-EU1, has been synthesized by an ionothermal approach from the system HF-ZnO–P₂O₅-choline chloride-imidazolidone. Ethylenediamine, derived from decomposition of the imidazolidone component of the deep-eutectic solvent (DES) itself, is delivered to the synthesis and serves as an appropriate template for ZnPO₄-EU1. Experiments in which the synthesis conditions were varied showed that ZnPO₄-EU1 may be prepared over a wide molar ratio of P/Zn = 0.55–13.0. Powder X-ray diffraction patterns have been obtained at intervals to track the crystallization process of this material. The experimental data show that Zn₃(PO₄)₂ · 4H₂O (a dense phase) was first isolated from the DES after reaction for 1 h. Subsequently, the pure phase of ZnPO₄-EU1 was obtained with increasing crystallization time from 12 h to 72 h. The experimental results show that the nucleation and crystallization take place with relatively low levels of solvent degradation, demonstrating that zinc phosphate with a three-dimensional framework can be synthesized by in situ generation of an appropriate template using an unstable DES at high temperatures (150–200 °C).     

Polyetherimide substrates for future high density optical data storage

Polyetherimide (PEI) substrate for next‐generation high density optical data storage is fabricated and characterized. Cover‐layer incident or first‐surface recording configurations do not require optical properties of the substrate, which are the prerequisite conditions for the conventional material of polycarbonate (PC). Instead of the optical properties, good mechanical properties with a sufficient transcribability are required. Even though PEI has higher glass transition temperature than that of PC, a microscopic transcribability of PEI is comparable with PC by laminating a thermal insulation layer on the backside of a stamper to retard the heat flow. A macroscopic warpage of PEI substrate is smaller than that of PC substrates, which reduces tilt and servo burden. The lowest critical speed coupled with the flutter of PEI substrate is larger than that of PC substrate because of the mechanical properties of PEI. POLYM. ENG. SCI., 48:97–101, 2008. © 2007 Society of Plastics Engineers     

基于USB的155 Mb/s码型发生器的研制

介绍了一种带USB接口的光的155Mb／s码型发生器。伪随机码和其他格式的码型由PC产生通过USB接口进入双口RAM，再经串并变换后由光发射模块发射。该系统可方便地设定各种格式的码型，并同时具备光接口和电接口，可广泛应用于光通信各种实验中，具有重要的实用价值。     

Formation mechanism of 21R AlN-polytypoids in aluminothermic reduction and nitridation process

Synthesis of 21R AlN polytypoids was investigated using Al and ultrafine SiO₂ powder in a flowing nitrogen atmosphere by means of thermal gravity (TG), differential scanning calorimeter (DSC), X-ray diffractometer (XRD) and scanning electronic microscope (SEM) linked with energy dispersive spectrometer (EDS). The results showed that the formation mechanism of AlN polytypoids was different from that in reaction sintering process using Si₃N₄, AlN, Al₂O₃ and other sintering additive as raw materials. It was suggested that firstly Al reduce SiO₂ into Si and is also nitrided into AlN, then AlN, Al₂O₃ and SiO₂ dissolve into silicon liquid until the AlN polytypoids precipitate in saturated liquid in a flowing nitrogen atmosphere at lower than 1700 °C.