全文获取类型
收费全文 | 525310篇 |
免费 | 7112篇 |
国内免费 | 1469篇 |
专业分类
电工技术 | 9561篇 |
综合类 | 526篇 |
化学工业 | 78660篇 |
金属工艺 | 19960篇 |
机械仪表 | 15190篇 |
建筑科学 | 12667篇 |
矿业工程 | 2269篇 |
能源动力 | 14516篇 |
轻工业 | 47055篇 |
水利工程 | 5219篇 |
石油天然气 | 9334篇 |
武器工业 | 37篇 |
无线电 | 59911篇 |
一般工业技术 | 101764篇 |
冶金工业 | 103499篇 |
原子能技术 | 10559篇 |
自动化技术 | 43164篇 |
出版年
2022年 | 3159篇 |
2021年 | 4892篇 |
2020年 | 3478篇 |
2019年 | 4553篇 |
2018年 | 7808篇 |
2017年 | 7608篇 |
2016年 | 7932篇 |
2015年 | 5560篇 |
2014年 | 9242篇 |
2013年 | 24067篇 |
2012年 | 14625篇 |
2011年 | 20142篇 |
2010年 | 15800篇 |
2009年 | 17693篇 |
2008年 | 18090篇 |
2007年 | 17776篇 |
2006年 | 15506篇 |
2005年 | 14209篇 |
2004年 | 13600篇 |
2003年 | 13397篇 |
2002年 | 12633篇 |
2001年 | 12831篇 |
2000年 | 11867篇 |
1999年 | 12595篇 |
1998年 | 32815篇 |
1997年 | 22896篇 |
1996年 | 17446篇 |
1995年 | 13035篇 |
1994年 | 11283篇 |
1993年 | 10972篇 |
1992年 | 7914篇 |
1991年 | 7417篇 |
1990年 | 7261篇 |
1989年 | 7013篇 |
1988年 | 6468篇 |
1987年 | 5766篇 |
1986年 | 5655篇 |
1985年 | 6265篇 |
1984年 | 5900篇 |
1983年 | 5170篇 |
1982年 | 4900篇 |
1981年 | 4966篇 |
1980年 | 4705篇 |
1979年 | 4609篇 |
1978年 | 4408篇 |
1977年 | 5334篇 |
1976年 | 6971篇 |
1975年 | 3796篇 |
1974年 | 3550篇 |
1973年 | 3665篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
991.
The narrow pore-size distribution of activated carbon fibres (ACF) limits their application in the fields concerning larger
molecules, such as liquid adsorption and catalyst support. On the addition of carbon particles and organic materials to polyacrylonitrile
fibres, and after stabilizing and activating, the mesoporosity in the resultant ACF has been obviously increased. Among these
additives, carbon black gives the best effect. With 1 wt% carbon black I in precursor and on activating at 880°C for 30 min,
a mesoporosity of 48.2% (total pore volume 0.704 ml g-1, mesopore volume 0.340 ml g-1) has been obtained. The mechanism of
mesopore formation is also discussed.
This revised version was published online in November 2006 with corrections to the Cover Date. 相似文献
992.
A wideband wattmeter for measuring active power over a frequency range of dc to 500 kHz is described. The wattmeter is based on the three-voltmeter method in which three rms voltage measurements are used to calculate power. The wattmeter active power uncertainty is estimated to be within 0.03% from dc to 20 kHz and within 1.5% to 500 kHz 相似文献
993.
994.
Faccio F. Anghinolfi F. Heijne E.H.M. Jarron P. Cristoloveanu S. 《Electron Devices, IEEE Transactions on》1998,45(5):1033-1038
An additional noise component is observed in the noise spectrum of transistors in a partially-depleted (PD) medium-thickness SOI-CMOS technology. We identify the origin of this additional noise in the noisy resistance of the body film. This resistance, coupled to the gate capacitance, forms an RC filter and generates the hump-shape of the additional noise component. Several experimental observations that support this model are presented 相似文献
995.
Modeling statistical dopant fluctuations in MOS transistors 总被引:1,自引:0,他引:1
Stolk P.A. Widdershoven F.P. Klaassen D.B.M. 《Electron Devices, IEEE Transactions on》1998,45(9):1960-1971
The impact of statistical dopant fluctuations on the threshold voltage VT and device performance of silicon MOSFET's is investigated by means of analytical and numerical modeling. A new analytical model describing dopant fluctuations in the active device area enables the derivation of the standard deviation, σVT , of the threshold voltage distribution for arbitrary channel doping profiles. Using the MINIMOS device simulator to extend the analytical approach, it is found that σVT, can be properly derived from two-dimensional (2-D) or three-dimensional (3-D) simulations using a relatively coarse simulation grid. Evaluating the threshold voltage shift arising from dopant fluctuations, on the other hand, calls for full 3-D simulations with a numerical grid that is sufficiently refined to represent the discrete nature of the dopant distribution. The average VT-shift is found to be positive for long, narrow devices, and negative for short, wide devices. The fast 2-D MINIMOS modeling of dopant fluctuations enables an extensive statistical analysis of the intrinsic spreading in a large set of compact model parameters for state-of-the-art CMOS technology. It is predicted that VT-variations due to dopant fluctuations become unacceptably large in CMOS generations of 0.18 μm and beyond when the present scaling scenarios are pursued. Parameter variations can be drastically reduced by using alternative device designs with ground-plane channel profiles 相似文献
996.
M Küchle A Amberg P Martus NX Nguyen GO Naumann 《Canadian Metallurgical Quarterly》1997,81(10):862-866
AIM/BACKGROUND: The pseudoexfoliation (PEX) syndrome is frequently associated with impairment of the blood-aqueous barrier. This study analysed if this might stimulate secondary cataract following cataract extraction. METHODS: This historical cohort study included 197 eyes of 197 patients (99 with and 98 without PEX) that underwent extracapsular cataract extraction with posterior chamber lens implantation (PMMA optic) between 1985 and 1991. Secondary cataract was defined as opacification of the axial posterior capsule and decrease of visual acuity by two or more lines. Mean follow up was 23.8 months. For statistical analysis, the Kaplan-Meier method and multivariate Cox regression analysis were used. RESULTS: Secondary cataract was observed within 24 months in 35% (SD 7%) of all eyes, and was significantly more frequent in eyes with PEX (45 (11)%) than in eyes without PEX (24 (9)%, p < 0.03). Eyes with diabetes mellitus (n = 32) showed a significantly lower frequency of secondary cataract (11 (11)%) than eyes without diabetes mellitus (39 (8)%, p < 0.01). The influences of sex, open angle glaucoma, type of cataract, surgeon, positioning of IOL, and phacoemulsification versus nuclear expression on secondary cataract did not reach statistical significance. CONCLUSION: The higher frequency of secondary cataract could be considered as another potential complication of cataract surgery in eyes with PEX. 相似文献
997.
998.
Superconducting control for surge currents 总被引:1,自引:0,他引:1
Systems designed to use superconductors to limit fault currents in power grids are undergoing testing. The authors describe superconducting fault current limiters (SCFCL) which may be categorised into resistive or shielded core types. The features and operation of each type of device are outlined. Both the shielded-core and resistive types of SCFCL use the same amount of superconductor material to achieve a given limitation behavior. This is because the rated power per volume of conductor is determined by the product of fault-induced field and critical current, which is the same for both devices, assuming the same type of superconducting material is employed. The shielded-core limiter works only with AC currents and is much larger and heavier than the resistive SCFCL. While there is only one large program left in the low-temperature type of SCFCL, more than 10 major projects are under way worldwide on the high-temperature type of device. The main reason is the lower HTS cooling cost 相似文献
999.
In this paper we propose a multiobjective decision making based neural-network model and algorithm for image reconstruction from projections. This model combines the Hopfield's model and multiobjective decision making approach. We develop a weighted sum optimization based neural-network algorithm. The dynamical process of the net is based on minimization of a weighted sum energy function and Euler's iteration, and apply this algorithm to image reconstruction from computer-generated noisy projections and Siemens Somatson DR scanner data, respectively. Reconstructions based on this method is shown to be superior to conventional iterative reconstruction algorithms such as the multiplicate algebraic reconstruction technique (MART) and convolution from the point of view of accuracy of reconstruction. Computer simulation using the multiobjective method shows a significant improvement in image quality and convergence behavior over the conventional algorithms 相似文献
1000.
We report a comprehensive crosstalk investigation of a packaged InGaAsP/InP 4×4 semiconductor optical amplifier gate switch matrix, experimentally as well as theoretically. For a fully loaded switch with the same wavelength on all four inputs, all possible switching combinations are analyzed, thus yielding realistic crosstalk figures. Coherent and incoherent crosstalk phenomena are identified, and a switch crosstalk less than -40 dB has been measured 相似文献