尿素对以硝酸铝和葡萄糖为原料合成氮化铝粉末反应过程中相变及反应速率的影响

以硝酸铝(Al(NO3)3·9H2O)和葡萄糖(C6H12O6·H2O)为原料,利用碳热还原法制备氮化铝粉末,研究了尿素对前驱物的制备及前驱物氮化反应的影响,研究发现添加尿素合成的前驱物和未添加尿素合成的前驱物在氮化反应过程中相变和反应速率存在较大差异。在没有添加尿素合成的前驱物的氮化反应过程中,出现了γ-Al2O3、α-Al2O3、AlON和AIN相,该前驱物的反应速率慢,完全氮化需要在1600℃下才能完成。对于添加尿素合成的前驱物而言,在其氮化反应过程中仅出现了γ-Al2O3和AIN相,没有α-Al2O3和AlON的生成,AIN直接由γ-Al2O3氮化生成,该前驱物的氮化反应速率快,氮化反应温度低,在1400℃下即可实现完全氮化。分析讨论了两种前驱物的氮化反应速率不同的主要原因,并利用XRD、SEM等分析方法对粉末进行了表征。     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

巧点火锅鸳鸯谱

北风起．火锅热。户外寒气逼人，屋内热气腾腾．鲜红的肉片。翠生生的青菜．在或红或白滚烫的锅中上下飞舞，仅是这灵动的姿态就让人禁受不住媚惑，抬手、举箸．一番狼吞虎咽，于是热气从心底缓缓升起，寒冷顿时一扫而空。[编者按]     

Pseudorandomness of Basic Structures in the Block Cipher KASUMI

The notion of pseudorandomness is the theoretical foundation on which to consider the soundness of a basic structure used in some block ciphers. We examine the pseudorandomness of the block cipher KASUMI, which will be used in the next‐generation cellular phones. First, we prove that the four‐round unbalanced MISTY‐type transformation is pseudorandom in order to illustrate the pseudorandomness of the inside round function FI of KASUMI under an adaptive distinguisher model. Second, we show that the three‐round KASUMI‐like structure is not pseudorandom but the four‐round KASUMI‐like structure is pseudorandom under a non‐adaptive distinguisher model.     

Near‐Infrared Light‐Emitting Diodes (LEDs) Based on Poly(phenylene)/Yb‐tris(β‐Diketonate) Complexes

Near‐infrared‐emitting electroluminescent (EL) devices using blue‐light‐emitting polymers blended with the Yb complexes Yb(DBM)₃phen (DBM = dibenzoylmethane), Yb(DNM)₃phen (DNM = dinaphthoylmethane), and Yb(TPP)L(OEt) (L(OEt) = [(C₅H₅)Co{P(O)Et₂}₃]^–) have been studied. EL devices composed of Yb(DNM)₃phen blended with PPP‐OR11 showed enhanced near‐IR output at 977 nm when compared to those fabricated with Yb(DBM)₃phen/PPP‐OR11 blends. The maximum near‐IR external efficiencies of the devices with Yb(DBM)₃phen and Yb(DNM)₃phen are, respectively, 7 × 10^–5 (at 6 V and at 0.81 mA mm^–2) and 4 × 10^–4 (at 7 V, and 0.74 mA mm^–2). The optimal blend composition for EL device performance consisted of PPP‐OR11 blended with 10–20 mol‐% Yb(DNM)₃phen. A device fabricated using Yb‐(TPP)L(OEt)/PPP‐OR11 showed significantly enhanced near‐IR output efficiency, and future efforts will focus on devices fabricated using porphyrin‐based materials.     

Three-temperature modeling of carrier-phonon interactions in thin GaAs film structures irradiated by picosecond pulse lasers

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.     

TAN/EOAN 组合导航技术

当飞行器超低空、低空在山区、平原、海面地带连续飞行作战时,由于地理条件的限制,所以GPS/INS组合导航或者其他导航系统(惯性导航系统、电光系统)的性能就会受到限制.在这种情况下,文中提出地形辅助导航和电光辅助导航技术,就能够克服这个困难,达到精确导航的目的.     

A new loss recovery architecture for wireless TCP

The loss recovery architecture of TCP under wireless environment is considered. We propose sent-time ordered two lists architecture as an alternative to sequence number ordered single list architecture. By keeping the sent-time order, the recovery mechanism can be more efficient and-simpler and transmission decision is decoupled from loss recovery using the second list. Simulation results show the superiority of our mechanism.