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81.
B. S. Lamsal M. Dubey V. Swaminathan Y. Huh D. Galipeau Q. Qiao Q. H. Fan 《Journal of Electronic Materials》2014,43(11):3965-3972
This work studied the electronic characteristics of the grains and grain boundaries of indium tin oxide (ITO) thin films using electrostatic and Kelvin probe force microscopy. Two types of ITO films were compared, deposited using radiofrequency magnetron sputtering in pure argon or 99% argon + 1% oxygen, respectively. The average grain size and surface roughness increased with substrate temperature for the films deposited in pure argon. With the addition of 1% oxygen, the increase in the grain size was inhibited above 150°C, which was suggested to be due to passivation of the grains by the excess oxygen. Electrostatic force microscopy and Kelvin probe force microscopy (KPFM) images confirmed that the grain growth was defect mediated and occurred at defective interfaces at high temperatures. Films deposited at room temperature with 1% oxygen showed crystalline nature, while films deposited with pure argon at room temperature were amorphous as observed from KPFM images. The potential drop across the grain and grain boundary was determined by taking surface potential line profiles to evaluate the electronic properties. 相似文献
82.
Waveband switching in optical networks 总被引:20,自引:0,他引:20
The rapid advances in dense wavelength-division multiplexing technology with hundreds of wavelengths per fiber and worldwide fiber deployment have brought about a tremendous increase in the size (i.e., number of ports) of photonic cross-connects, as well as in the cost and difficulty associated with controlling such large cross-connects. Waveband switching (WBS) has attracted attention for its practical importance in reducing the port count, associated control complexity, and cost of photonic cross-connects. We show that WBS is different from traditional wavelength routing, and thus techniques developed for wavelength-routed networks (including, for example, those for traffic grooming) cannot be directly applied to effectively address WBS-related problems. We describe two multigranular OXC architectures for WBS. By using the multilayer MG-OXC in conjunction with intelligent WBS algorithms for both static and dynamic traffic, we show that one can achieve considerable savings in the port count. We also present various WBS schemes and lightpath grouping strategies, and discuss issues related to waveband conversion and failure recovery in WBS networks. 相似文献
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85.
轴承振动测量仪是用来测量轴承振动加速度的重要计量仪器,种类繁多,应用广泛,但缺乏有效的校准检定方法。文中结合作者多年来从事振动方向校准检定的实践经验和深入的理论分析,提出了两种切实可行的校准方法,对该类仪器的校准有积极的指导意义。 相似文献
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89.
Jin He Young Jin Jo Xianglang Sun Weiguo Qiao Jehyung Ok Tae-il Kim Zhong'an Li 《Advanced functional materials》2021,31(12):2008201
Squaraine dyes (SQs) are an important class of polymethine dyes with a unique reasonable-stabilized zwitterionic structure, in which electrons are highly delocalized over the conjugated bridge. These dyes can not only be easily synthesized via a condensation, but also exhibit intense absorption and emission in the visible and near-infrared region with excellent photochemical stability, making them attractive material candidates for many photoelectric and biomedical applications. Thus, in this review, after an introduction of SQs, the recent advances of SQs in the photovoltaic field are comprehensively summarized including dye-sensitized solar cells, organic solar cells, and perovskite solar cells. Then, the important advances in the use of SQs as the biosensors, biological imaging, and photodynamic/photothermal therapy reagents in the biomedical field are also discussed. Finally, a summary and outlook will be provided with some new perspectives for the future design of SQs. 相似文献
90.
Panithan Sriboriboon Huimin Qiao Seunghun Kang Changhyo Sun Yunseok Kim 《Advanced functional materials》2021,31(47):2103145
Ionically mediated phenomena underpin the functioning of various devices, including batteries, solid oxide fuel cells, memristors, and neuromorphic devices. The ionic behavior corresponding to ionically mediated phenomena causes not only variations in the electrical properties but also mechanical deformation, which is crucial for device reliability. However, the interrelation between ionically mediated electrical properties and mechanical deformation has not been elucidated yet. This study investigates ionically mediated mechanical deformation accompanied by memristive switching in a TiO2 single crystal through simultaneous conductive atomic force microscopy and electrochemical strain microscopy. A comprehensive analysis indicates the existence of a relationship between mechanical deformation and memristive switching based on the ionic behavior. Furthermore, an ionic state variable is used to simplify the interrelation between the electrochemical strain hysteresis and memristive switching associated with applied voltage. This study provides insights on the ionic behavior and can be extended to other systems for the general analysis of the relationship between mechanical deformation and electrical properties. 相似文献