High spatial order finite element method to solve Maxwell's equations in time domain

This paper presents a finite element method with high spatial order for solving the Maxwell equations in the time domain. In the first part, we provide the mathematical background of the method. Then, we discuss the advantages of the new scheme compared to a classical finite-difference time-domain (FDTD) method. Several examples show the advantages of using the new method for different kinds of problems. Comparisons in terms of accuracy and CPU time between this method, the FDTD and the finite-volume time-domain methods are given as well.     

MOS RF reliability subject to dynamic voltage stress-modeling and analysis

Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc) stress were evaluated experimentally. It showed that the degradation due to dynamic stress is less than that of dc stress for our test transistors. A compact model is used to evaluate the degradation in radio frequency performances, such as transconductance, cutoff frequency, linearity, and noise figure. A class-AB power amplifier is presented as an example to demonstrate the effect of dynamic stress on RF circuit performance.     

8-Gbit/s transmission experiment over 68 km of optical fiber using a Ti:LiNbO3external modulator

We describe the performance of an experimental 1.5-μm lightwave transmission system operating at 8 Gbit/s over 68.3 km of single-mode fiber. The dispersion penalty is limited to 1 dB through the use of external modulation and is attributable to the intrinsic information bandwidth.     

Semiconductor optical amplifier for CWDM operating over 1540-1620 nm

A semiconductor optical amplifier was developed for coarse wavelength-division-multiplexing (CWDM) operating over 1540-1620 nm (C-L band). A unique quantum-well structure was designed to meet the requirements for the CWDM operation such as wide bandwidth, low polarization-dependent gain, and high-saturation power at the short wavelength end of the band (1540 nm). Over the band, 24-dB maximum chip gain was obtained with less than 4.3-dB gain flatness and more than 14.6-dBm saturation power.     

Application of Romero García method to the degradation process of DGEBA/ETDA filled with ultra fine metallic copper

Summary The thermal properties of an epoxy resin (diglycidyl ether Bisphenol A, DGEBA) cured with a primary amine (ethylenediamine, ETDA) and filled with 10, 20 and 30 wt. % of ultra fine copper particles were analyzed. The thermal results were evaluated by means of the Romero-Garcia method, which allowed to obtain the resin degradation kinetic parameters, as well as the possible decomposition mechanism. From the obtained results is possible to infer that higger copper content strongly affects the degradation process of the epoxy resin, which causes a drop off on the composites thermal stability. This behavior could be attributed to water presence, being this effect less pronounced for the resin with 10 wt. % copper and unfilled resin. Regarding to decomposition mechanism, three way transport showed the best correlation for all samples.     

A family of highly symmetric codes

We define a class of codes admitting a large automorphism group. This family contains the binary extended Hamming code, the hexacode, the Golay codes, the Pless symmetry codes, as well as the [16,4,12]/sub 8/-codes constructed by Marcugini et al. A computer search resulted in the construction of codes with new parameters [28,7,18]/sub 8/,[32,8,20]/sub 8/, and [39,13,17]/sub 4/ belonging to this family.     

Electroluminescence spectroscopy for reliability investigations of 1.55 μm bulk semiconductor optical amplifier

This paper demonstrates the complementary relation between functional parameters and electroluminescence spectroscopy for reliability investigations of 1550 nm Semiconductor Optical Amplifiers of 700 μm length active region. Ageing tests have been set to 270 mA-100 °C-1500 h and realized on two different wafers showing more impact on wafer 1 than on wafer 2. Our investigations are particularly focused on interpretation of electroluminescence spectra, from reference and aged SOAs of wafer 1, leading to an improvement of degradation mechanisms understanding. The shift rate to lower energies of the recombination energy peak at 1550 nm, as reported by electroluminescence spectra between reference and aged SOAs in relation with the decrease of optical power measured at 200 mA for the degraded SOA and completed by I(V) characterizations, suggest occurrence of non radiative deep centers near the buried ridge structure in relation with the cleaning process uniformity of interfaces before epitaxial overgrowth. These defects mainly trap majority injected carriers instead of minority carriers reducing the luminescence in the active zone. By monitoring the most sensitive failure indicator (pseudo-threshold current), lifetime distributions are also calculated to determine failure rate, between 150 and 200 FITs over 15 years for operating conditions (25 °C-200 mA) using experimental degradation laws and statistic computations, demonstrating the overall robustness of this technology.     

Parathion degradation and toxicity reduction in solar photocatalysis and photolysis.

The solar photocatalytic degradation of methyl parathion was investigated using a circulating TiO2/solar light reactor. Under solar photocatalysis condition, parathion was more effectively degraded than solar photolysis and TiO2-only conditions. With solar photocatalysis, 20 mg/L of parathion was completely degraded within 60 min with a TOC decrease of 63% after 150 min. The main ionic byproducts during photocatalysis recovered from parathion degradation were mainly as NO3-, NO2- and NH4+, 80% of the sulphur as SO4(2-), and 5% of phosphorus as PO4(3-). The organic intermediates 4-nitrophenol and methyl paraoxon were also identified, and these were further degraded in solar photocatalytic condition. Two different bioassays (Vibrio fischeri and Daphnia magna) were used to test the acute toxicity of solutions treated by solar photocatalysis and photolysis. The Microtox test using V. fischeri showed that the toxicity expressed as EC50 (%) value increased from 5.5% to >82% in solar photocatalysis, indicating that the treated solution is non-toxic, but only increased from 4.9 to 20.5% after 150 min in solar photolysis. The acute toxicity test using D. magna showed that EC50 (%) increased from 0.05 to 1.08% under solar photocatalysis, but only increased to 0.12% after 150 min with solar photolysis, indicating the solution is still toxic. The pattern of toxicity reduction parallels the decrease in TOC and the parathion concentrations.