The role of the mercury-Si Schottky-barrier height in /spl Psi/-MOSFETs

Pseudo-MOSFETs (/spl Psi/-MOSFET) are routinely used for silicon-on-insulator (SOI) material characterization, allowing threshold voltage, electron and hole mobility, doping density, oxide charge, interface trap density, etc. to be determined. The HgFET, one version of the /spl Psi/-MOSFET, uses mercury source and drain contacts. It is a very effective SOI test structure, but its current-voltage behavior is critically dependent on the Hg-Si interface. We have investigated this interface through current-voltage measurements of HgFETs and Schottky diodes and through device modeling. We show that modest barrier height changes of 0.2 eV lead to current changes of up to three orders of magnitude. Etching the Si surface in a mild HF :H/sub 2/O solution can easily change barrier heights and we attribute this behavior to Si surface passivation of dangling bonds. As this surface passivation diminishes with time, the Si surface becomes a more active generation site and the barrier height of the Hg-Si interface changes, taking on the order of 50-100 h at room temperature in air.     

Design and Implementation of Super Wide Band Triple Band-Notched MIMO Antennas

Wireless Personal Communications - Semantic Web content extracting are the augmentation of the present web where the data is given in the better importance and allowing users to work close by close...     

Convolutional Perfectly Matched Layer for an Unconditionally Stable LOD-FDTD Method

This letter presents the development and implementation of the convolutional perfectly matched layer (CPML) for the recently proposed locally 1-D finite difference time domain method LOD-FDTD. Two different examples are simulated. Their results are compared with the FDTD-PML method and it is found that the proposed method has 16 dB less reflection error at a Courant Friedrich Levy number of one.     

Correction to: Similar Feed-forward Loop Crosstalk Patterns may Impact Robust Information Transport Across E. coli and S. Cerevisiae Transcriptional Networks

Mobile Networks and Applications - The original version of this article unfortunately contained a mistake in the author group section. Author Preetam Ghosh’s given name was incorrectly...     

New Solution‐Processable Electron Transport Materials for Highly Efficient Blue Phosphorescent OLEDs

Several new solution‐processable organic semiconductors based on dendritic oligoquinolines were synthesized and were used as electron‐transport and hole‐blocking materials to realize highly efficient blue phosphorescent organic light‐emitting diodes (PhOLEDs). Various substitutions on the quinoline rings while keeping the central meta‐linked tris(quinolin‐2‐yl)benzene gave electron transport materials that combined wide energy gap (>3.3 eV), moderate electron affinity (2.55‐2.8 eV), and deep HOMO energy level (<‐6.08 eV) with electron mobility as high as 3.3 × 10^?3 cm² V^?1 s^?1. Polymer‐based PhOLEDs with iridium (III) bis(4,6‐(di‐fluorophenyl)pyridinato‐N,C^2′)picolinate (FIrpic) blue triplet emitter and solution‐processed oligoquinolines as the electron‐transport layers (ETLs) gave luminous efficiency of 30.5 cd A^?1 at a brightness of 4130 cd m^?2 with an external quantum efficiency (EQE) of 16.0%. Blue PhOLEDs incorporating solution‐deposited ETLs were over two‐fold more efficient than those containing vacuum‐deposited ETLs. Atomic force microscopy imaging shows that the solution‐deposited oligoquinoline ETLs formed vertically oriented nanopillars and rough surfaces that enable good ETL/cathode contacts, eliminating the need for cathode interfacial materials (LiF, CsF). These solution‐processed blue PhOLEDs have the highest performance observed to date in polymer‐based blue PhOLEDs.     

RFID Transponder Collision Control Algorithm

Transponder collision problem can be significant when a large number of RFID (radio frequency identification) transponders exist in field. Most existing anti-collision algorithms can solve this problem. However, problem arises when all or part of these transponders are having identical UID (unique identification). This paper proposes a new transponder collision control algorithm to overcome overlapping that occurs among transponders with identical UID in RFID large scale deployment (e.g., in a large warehouse), so that the RFID reader can successfully identify the quantity of transponders for each particular UID with high identification accuracy. The proposed anti-collision algorithm adopts a modified version of frequency domain method by adding stochastic delays in time domain. The obtained results show that the proposed method can achieve optimum frequency bandwidth utilization and at the same time poses high identification accuracy (almost 100%) with low identification delay.     

Generation of Generalized Impedance Converter Circuits Using NAM Expansion

The generation of the voltage generalized impedance converter (VGIC) circuits using a nodal admittance matrix (NAM) expansion is given in detail. Thirty-two equivalent circuits using current conveyors (CCII) or inverting current conveyors (ICCII) or a combination of both are generated. The reported circuits are suitable for realizing inductors or frequency dependent negative resistors (FDNR) using grounded passive elements. Similarly the generation of the current generalized impedance converter (CGIC) circuits published recently is reexamined and this resulted in 16 more new CGIC circuits using an alternative NAM expansion. Modification of two of the generated circuits to realize a floating inductor or floating FDNR is also given together with Spice simulation results.     

A Behavioral Model of MEMS Convective Accelerometers for the Evaluation of Design and Calibration Strategies at System Level

This paper presents a behavioral model that can be used to improve the manufacturability of systems based on MEMS convective sensors. This model permits to handle faults related to process scattering, taking into account not only the electrical and lateral geometrical parameters but also the influence of the cavity depth. Moreover correlations between conductive and convective phenomena are included. The model is validated with respect to FEM simulations and a very good agreement is obtained between the behavioral model and FEM results. The proposed model can then be used in system-level simulations, for instance to evaluate the impact of process scattering on the performances of the sensing part and/or to investigate different design and calibration strategies with respect to the system robustness.